KR980001823A - 고비점 잔류물을 직접 공정에 의해 모노실란으로 전환시키는 방법 - Google Patents

고비점 잔류물을 직접 공정에 의해 모노실란으로 전환시키는 방법 Download PDF

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KR980001823A
KR980001823A KR1019970024592A KR19970024592A KR980001823A KR 980001823 A KR980001823 A KR 980001823A KR 1019970024592 A KR1019970024592 A KR 1019970024592A KR 19970024592 A KR19970024592 A KR 19970024592A KR 980001823 A KR980001823 A KR 980001823A
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high boiling
formula
monosilane
direct process
boiling residues
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KR1019970024592A
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KR100457847B1 (ko
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스티븐 케리 프리번
2세 로버트 프랭크 자비스
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맥컬러 로버트 루이스
다우 코닝 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/12—Organo silicon halides
    • C07F7/16—Preparation thereof from silicon and halogenated hydrocarbons direct synthesis
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/12—Organo silicon halides
    • C07F7/121—Preparation or treatment not provided for in C07F7/14, C07F7/16 or C07F7/20
    • C07F7/128—Preparation or treatment not provided for in C07F7/14, C07F7/16 or C07F7/20 by reactions covered by more than one of the groups C07F7/122 - C07F7/127 and of which the starting material is unknown or insufficiently determined

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Silicon Compounds (AREA)
  • Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)

Abstract

본 발명은 오가노클로라이드와 규소 메탈로이드를 통상적으로 ″직접 공정″으로 언급되는 공정으로 반응시켜 수득한 고비점 잔류물로부터 모노실란을 제조하기 위한 방법에 관한 것이다. 본 방법은 고비점 잔류물, 오가노트리클로로실란 및 염화수소를 포함하는 혼합물을 고비점 잔류물로부터 모노실란의 형성을 촉진시키시에 유효한 촉매량의 촉매 조성물과 접촉시킴을 포함한다. 바람직한 촉매 조성물은 적어도 일부가 직접 공정으로 그리고 고비점 잔류물을 분리하는 동안 자체로서 형성되는 삼염화알루미늄을 포함한다. 통상적으로, 본 발명의 모노실란 생성물은 거의 메틸트리클로로실란 및 테트라클로로실란만을 포함한다.

Description

고비점 잔류물을 직접 공정에 의해 모노실란으로 전환시키는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (4)

  1. 오가노클로라이드와 규소 메탈로이드의 반응으로부터 생성되는 고비점 잔류물, 화학식 1의 오가노트리클로로시란 및 염화 수소를 150 내지 500℃의 온도 범위와 0.69 내지 34.5MPa(100 내지 5,000psi)의 압력 범위에서 고비점 잔류물로 부터 모노실란의 형성을 촉진시키는 데 효과적인 촉매량의 촉매 조성물과 접촉시킴을 포함하여, 고비점 잔류물을 모노실란으로 전환시키는 방법.
    화학식 1 RSiCl3상기 화학식 1에서, R은 탄소수 1 내지 6의 알킬, 아릴, 탄소수 1 내지 6의 알콕시, 트리메틸실릴 및 트리플루오로프로필로 이루어진 그룹으로부터 선택된다.
  2. 제1항에 있어서, 촉매 조성물이 삼염화알루미늄, 오염화안티몬 및 이의 배합물로 이루어진 그룹으로부터 선택되는 방법.
  3. 제2항에 있어서, 촉매량의 삼염화알루미늄의 적어도 일부가 자체 내에서 형성되는 방법.
  4. 제1항에 있어서, 화학식 2의 모노실란을 회수함을 추가로 포함하는 방법.
    화학식 2 RyHzSiCl4-y-z위의 화학식 2에서, R은 제1항에서 정의한 바와 같고, y는 0 내지 4이며, z는 0 내지 3이고, y+z는 0 내지 4이다.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970024592A 1996-06-13 1997-06-13 직접공정으로부터의고비점잔사를모노실란으로전환시키는방법 KR100457847B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/662,576 1996-06-13
US08/662,576 US5627298A (en) 1996-06-13 1996-06-13 One step process for converting high-boiling residue from direct process to monosilanes

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KR980001823A true KR980001823A (ko) 1998-03-30
KR100457847B1 KR100457847B1 (ko) 2005-02-23

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US (1) US5627298A (ko)
EP (1) EP0812850B1 (ko)
JP (1) JP4008533B2 (ko)
KR (1) KR100457847B1 (ko)
CN (1) CN1061659C (ko)
DE (1) DE69705162T2 (ko)
MY (1) MY117301A (ko)

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DE10039172C1 (de) * 2000-08-10 2001-09-13 Wacker Chemie Gmbh Verfahren zum Aufarbeiten von Rückständen der Direktsynthese von Organochlorsilanen
KR100855672B1 (ko) * 2001-12-18 2008-09-03 주식회사 케이씨씨 고비점 잔류물로부터 모노실란 제조 방법
DE10336545B3 (de) * 2003-08-05 2005-04-14 Ge Bayer Silicones Gmbh & Co. Kg Verfahren zur Herstellung von Chlorsilanen
CN1309725C (zh) * 2003-09-04 2007-04-11 中国石油天然气股份有限公司 利用有机硅高沸物制备二甲基二氯硅烷的方法
CN101786629A (zh) 2009-01-22 2010-07-28 陶氏康宁公司 回收高沸点废料的方法
US8697901B2 (en) 2011-12-30 2014-04-15 Momentive Performance Materials Inc. Synthesis of organohalosilane monomers via enhanced cleavage of direct process residue
US8637695B2 (en) 2011-12-30 2014-01-28 Momentive Performance Materials Inc. Synthesis of organohalosilane monomers from conventionally uncleavable Direct Process Residue
CN105347349B (zh) * 2015-12-09 2017-04-19 宁夏胜蓝化工环保科技有限公司 气相催化转化氯代乙硅烷制备氯代单硅烷的工艺及其专用催化剂
CN111377450A (zh) * 2018-12-29 2020-07-07 江苏中能硅业科技发展有限公司 一种用于处理多晶硅副产高沸物的装置和方法
CN114258396B (zh) 2019-08-22 2024-09-20 美国陶氏有机硅公司 用于纯化硅化合物的方法
CN116119672A (zh) * 2023-03-06 2023-05-16 洛阳中硅高科技有限公司 四氯化硅的纯化系统和方法

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Publication number Publication date
DE69705162D1 (de) 2001-07-19
US5627298A (en) 1997-05-06
CN1172114A (zh) 1998-02-04
JP4008533B2 (ja) 2007-11-14
EP0812850A2 (en) 1997-12-17
JPH1081506A (ja) 1998-03-31
KR100457847B1 (ko) 2005-02-23
EP0812850A3 (en) 1998-10-28
EP0812850B1 (en) 2001-06-13
MY117301A (en) 2004-06-30
DE69705162T2 (de) 2002-03-07
CN1061659C (zh) 2001-02-07

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