KR970077585A - 반도체 패키지 및 그 제조 방법 - Google Patents

반도체 패키지 및 그 제조 방법 Download PDF

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Publication number
KR970077585A
KR970077585A KR1019970020304A KR19970020304A KR970077585A KR 970077585 A KR970077585 A KR 970077585A KR 1019970020304 A KR1019970020304 A KR 1019970020304A KR 19970020304 A KR19970020304 A KR 19970020304A KR 970077585 A KR970077585 A KR 970077585A
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South Korea
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lead
film
forming region
protective coating
chip
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KR1019970020304A
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English (en)
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마꼬또 이또
겐지 오사와
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이데이 노부유끼
소니 가부시끼가이샤
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Publication of KR970077585A publication Critical patent/KR970077585A/ko

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Abstract

리드 접합면 측에 칩 수용 오목부가 형성되어 있는 보강판; 이 보강판의 칩수용 오목부에 수용 및 고정되는 반도체 칩; 내부 리드부가 범프를 통하여 반도체 칩에 접합되어 있고 외부 리드부에 돌기 전극이 형성되어 있으며, 보강판의 리드 접합면 상에 접합 및 보유되는 복수의 리드; 이 리드의 범프 형성 영역 및 전극 형성영역을 제외한 리드 상에 형성되는 땜납 레지스트막; 및 이 땜납 레지스트막 상의 리드의 내부 리드부 측에 형성되는 폴리마이드막을 포함하는 반도체 패키지와, 그 제조 방법이 제공되어, 울트라-멀티핀 구조의 반도체 패키지의 품질이 안정화된다.

Description

반도체 패키지 및 그 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 반도체 패키지의 실시예를 도시한 측단면도.

Claims (7)

  1. 리드(lead) 접합면 측에 칩 수용 오목부가 형성되어 있는 패키지 본체; 상기 패키지 본체의 상기 칩 수용 오목부에 수용 및 고정되는 반도체 칩; 내부 리드부가 범프(bump)를 통해 상기 반도체 칩에 접합되어 있고 외부 리드부에 돌기 전극(protruded electrode)이 형성되어 있으며, 상기 패키지 본체의 상기 리드 접합면 상에 접합 및 보유되는 복수의 리드; 상기 리드의 범프 형성 영역 및 돌기 형성 영역을 제외한 상기 리드 상에 형성되는 리드 보호 코팅막; 및 상기 리드 보호 코팅막 상의 상기 리드의 내부 리드부 측에 형성되는 리드 보강막(reinforcing film)을 포함하는 반도체 디바이스.
  2. 제1항에 있어서, 상기 리드 보강막은 상기 칩을 둘러싸는 프레임의 형태로 형성되고, 상기 패키지 본체의 칩 수용 오목부에 수용 및 고정되는 상기 반도체 칩은 수지(resin)로 밀봉되는 것을 특징으로 하는 반도체 디바이스.
  3. 동(copper) 또는 동 합금(copper alloy)으로 구성되는 기판 상에 단지 에칭 억제막을 및 도금 기판막을 순차적으로 적층함으로써 형성되는 금속 베이스의 표면에 동 도금(copper plating)하여 복수의 리드를 형성하는 공정; 상기 리드의 상기 범프 형성 영역 및 상기 돌기 전극 형성 영역을 제외한 상기 금속 베이스의 리드 형성면 상에 리드 보호 코팅막을 형성하는 공정; 상기 리드 보호 코팅막 상의 상기 리드의 내부 리드부 측상에 리드 보강막을 형성하는 공정; 상기 리드의 외부 리드부에 돌기 전극을 형성하는 공정; 상기 금속 베이스를 에칭에 의해 선택적으로 제거하여 상기 각 리드를 분리하는 공정; 및 반도체 칩을 상기 리드의 내부 리드부에 접합하는 공정을 포함하는 반도체 디바이스 제조 방법.
  4. 제3항에 있어서, 상기 에칭 억제막은 알루미늄으로 구성되는 것을 특징으로 하는 반도체 디바이스 제조 방법.
  5. 제3항에 있어서, 상기 에칭 억제막은 니켈로 구성되는 것을 특징으로 하는 반도체 디바이스 제조 방법.
  6. 외부 리드부 내에 돌기 전극이 형성되어 있는 복수의 리드; 상기 리드를 반도체 칩에 전기적으로 접속하기 위한 범프 형성 영역 및 상기 리드의 돌기 전극 형성 영역을 제외한 상기 리드 상에 형성되는 리드 보호 코팅막; 및 상기 리드 보호 코팅막 상의 상기 리드의 내부 리드부 측에 형성되는 리드 보강막을 포함하는 막 회로(film circuit).
  7. 제6항에 있어서, 상기 리드 보강막은 원형으로(circularly) 형성되는 것을 특징으로 하는 막 회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970020304A 1996-05-24 1997-05-23 반도체 패키지 및 그 제조 방법 KR970077585A (ko)

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