TW326565B - Semiconductor package and manufacturing method thereof - Google Patents

Semiconductor package and manufacturing method thereof

Info

Publication number
TW326565B
TW326565B TW086106963A TW86106963A TW326565B TW 326565 B TW326565 B TW 326565B TW 086106963 A TW086106963 A TW 086106963A TW 86106963 A TW86106963 A TW 86106963A TW 326565 B TW326565 B TW 326565B
Authority
TW
Taiwan
Prior art keywords
lead
joined
leads
package body
bump
Prior art date
Application number
TW086106963A
Other languages
English (en)
Inventor
Makoto Ito
Kenji Ozawa
Original Assignee
Sony Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Co Ltd filed Critical Sony Co Ltd
Application granted granted Critical
Publication of TW326565B publication Critical patent/TW326565B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49572—Lead-frames or other flat leads consisting of thin flexible metallic tape with or without a film carrier
    • H—ELECTRICITY
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    • H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2924/15184—Fan-in arrangement of the internal vias in different layers of the multilayer substrate
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    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
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    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
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    • H01L2924/181—Encapsulation
TW086106963A 1996-05-24 1997-05-23 Semiconductor package and manufacturing method thereof TW326565B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8129467A JPH09312374A (ja) 1996-05-24 1996-05-24 半導体パッケージ及びその製造方法

Publications (1)

Publication Number Publication Date
TW326565B true TW326565B (en) 1998-02-11

Family

ID=15010221

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086106963A TW326565B (en) 1996-05-24 1997-05-23 Semiconductor package and manufacturing method thereof

Country Status (4)

Country Link
US (3) US6114755A (zh)
JP (1) JPH09312374A (zh)
KR (1) KR970077585A (zh)
TW (1) TW326565B (zh)

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KR970077585A (ko) 1997-12-12
US6258631B1 (en) 2001-07-10
US6104091A (en) 2000-08-15
JPH09312374A (ja) 1997-12-02

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