KR970077404A - Cd 체크포인트를 이용한 박막 전극두께 검출방법 - Google Patents

Cd 체크포인트를 이용한 박막 전극두께 검출방법 Download PDF

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Publication number
KR970077404A
KR970077404A KR1019960014456A KR19960014456A KR970077404A KR 970077404 A KR970077404 A KR 970077404A KR 1019960014456 A KR1019960014456 A KR 1019960014456A KR 19960014456 A KR19960014456 A KR 19960014456A KR 970077404 A KR970077404 A KR 970077404A
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KR
South Korea
Prior art keywords
thin film
thickness
film electrode
detection method
check point
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KR1019960014456A
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English (en)
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KR100192141B1 (ko
Inventor
장성우
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서두칠
대우전자부품 주식회사
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Priority to KR1019960014456A priority Critical patent/KR100192141B1/ko
Publication of KR970077404A publication Critical patent/KR970077404A/ko
Application granted granted Critical
Publication of KR100192141B1 publication Critical patent/KR100192141B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 미세 두께의 정밀도가 필요로 되는 박막 전극과 같은 회로에 대해 에칭을 수행하는 경우 미세 전극이 손상되지 않으면서 미세 전극의 두께가 측정될 수 있도록 된 CD 체크포인트를 이용한 박막 전극두께 검출방법에 관한 것으로, 폴리아미드필름(1 : polyimide film)상에 알루미늄 박막(2)을 미세 에칭하는 공정을 포함하여 이루어진 박막 전극두께 검출방법에 있어서, 상기 폴리아미드 필름(1)상의 일부에 박막 전극두께와 동일한 CD 체크포인트(critical dimension check point)용 박막 전극(3)을 형성하고, 상기 CD 체크포인트의 박막 전극 두께를 목표치에 도달할 때까지 에칭을 수행하는 공정을 포함하여 이루어진 것을 특징으로 한다.

Description

CD 체크포인트를 이용한 박막 전극두께 검출방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 CD(critical dimension) 체크포인트를 이용하여 박막 전극두께를 검출하기 위해 웨이퍼상의 회로에 CD 체크포인트를 나타낸 부분평면도.

Claims (1)

  1. 폴리아미드필름(1 : polyimide film)상에 알루미늄 박막(2)을 형성하는 공정과, 상기 알루미늄 박막(2)을 미세패턴하는 공정 및, 상기 알루미늄 박막(2)을 미세 에칭하는 공정을 포함하여 이루어진 박막 전극두께 검출방법에 있어서, 상기 폴리아미드 필름(1)상의 일부에 박막 전극두께와 동일한 CD 체크포인트(critical dimension check point)용 박막 전극(3)을 형성하고, 상기 CD 체크포인트의 박막 전극 두께를 목표치에 도달할 때까지 에칭을 수행하는 공정을 포함하여 이루어진 것을 특징으로 하는 CD 체크포인트를 이용한 박막 전극두께 검출방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960014456A 1996-05-03 1996-05-03 Cd 체크포인트를 이용한 박막 전극두께 검출방법 KR100192141B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960014456A KR100192141B1 (ko) 1996-05-03 1996-05-03 Cd 체크포인트를 이용한 박막 전극두께 검출방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960014456A KR100192141B1 (ko) 1996-05-03 1996-05-03 Cd 체크포인트를 이용한 박막 전극두께 검출방법

Publications (2)

Publication Number Publication Date
KR970077404A true KR970077404A (ko) 1997-12-12
KR100192141B1 KR100192141B1 (ko) 1999-06-15

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ID=19457677

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960014456A KR100192141B1 (ko) 1996-05-03 1996-05-03 Cd 체크포인트를 이용한 박막 전극두께 검출방법

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KR (1) KR100192141B1 (ko)

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Publication number Publication date
KR100192141B1 (ko) 1999-06-15

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