KR930006841A - 반도체장치의 에칭종점검출방법 - Google Patents

반도체장치의 에칭종점검출방법 Download PDF

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Publication number
KR930006841A
KR930006841A KR1019920017157A KR920017157A KR930006841A KR 930006841 A KR930006841 A KR 930006841A KR 1019920017157 A KR1019920017157 A KR 1019920017157A KR 920017157 A KR920017157 A KR 920017157A KR 930006841 A KR930006841 A KR 930006841A
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KR
South Korea
Prior art keywords
etching
point detection
end point
detection method
etching end
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KR1019920017157A
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English (en)
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KR970000694B1 (ko
Inventor
시게히코 가네다케
도시히코 가츠라
마사히로 아베
Original Assignee
사토 후미오
가부시키가이샤 도시바
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Publication of KR930006841A publication Critical patent/KR930006841A/ko
Application granted granted Critical
Publication of KR970000694B1 publication Critical patent/KR970000694B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

본 발명은 드라이에칭에 있어서 에칭종료시간의 판정을 재현성 좋게 검출할 수 있는 종점검출방법을 제공함에 그 목적이 있는 것이다.
상기한 목적을 달성하기 위해 본 발명은 헬륨가스를 포함하는 에칭가스로 드라이에칭할 때에 발광분광 스펙트르강도를 감시하도록 되어있다. 그 강도파형에는 단일피크가 있다. 단일 피크를 나타내는 시간이 에칭종료시간이기 때문에, 쉽게 종점검출을 할수 있게 된다.

Description

반도체장치의 에칭종점검출방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에서 사용되는 드라이(dry)에칭장치의 구성을 나타낸 개략도,
제2도는 본 발명의 제1실시예에서의 대상에칭물의 단면도,
제3도는 에칭시간에 대한 헬륨 발광강도의 변화를 나타낸 도면,
제4도는 3매의 대상에칭물마다 에칭시강에 대한 헬륨의 발광강도의 변화를 나타낸 도면,
제5도는 에칭시간에 대한 알루미늄 발광강도의 변화를 나타낸 도면이다.

Claims (2)

  1. 헬륨가스를 포함하는 에칭가스를 채용한 드라이에칭에 있어서, 에칭에서의 헬륨가스의 발광분광 스펙트르 강도의 시간변화를 감시하도록 된 것을 특징으로 하는 에칭종점검출방법.
  2. 제1항에 있어서, 대상에칭재료가 알루미늄 또는 알루미늄 합금인 것을 특징으로 하는 에칭종점검출방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920017157A 1991-01-26 1992-09-21 반도체장치의 에칭종점검출방법 KR970000694B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-247330 1991-09-26
JP3247330A JP3015540B2 (ja) 1991-09-26 1991-09-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR930006841A true KR930006841A (ko) 1993-04-22
KR970000694B1 KR970000694B1 (ko) 1997-01-18

Family

ID=17161801

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920017157A KR970000694B1 (ko) 1991-01-26 1992-09-21 반도체장치의 에칭종점검출방법

Country Status (3)

Country Link
US (1) US5261998A (ko)
JP (1) JP3015540B2 (ko)
KR (1) KR970000694B1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2790084B2 (ja) * 1995-08-16 1998-08-27 日本電気株式会社 半導体装置の製造方法
US5793913A (en) * 1996-07-10 1998-08-11 Northern Telecom Limited Method for the hybrid integration of discrete elements on a semiconductor substrate
US5712702A (en) * 1996-12-06 1998-01-27 International Business Machines Corporation Method and apparatus for determining chamber cleaning end point
US6060328A (en) * 1997-09-05 2000-05-09 Advanced Micro Devices, Inc. Methods and arrangements for determining an endpoint for an in-situ local interconnect etching process
US6174407B1 (en) 1998-12-03 2001-01-16 Lsi Logic Corporation Apparatus and method for detecting an endpoint of an etching process by transmitting infrared light signals through a semiconductor wafer
US6136719A (en) * 1999-04-30 2000-10-24 Lsi Logic Corporation Method and arrangement for fabricating a semiconductor device
US6828249B2 (en) * 2002-03-20 2004-12-07 Infineon Technologies Richmond, Lp. System and method for enhanced monitoring of an etch process

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593925A (ja) * 1982-06-29 1984-01-10 Ulvac Corp ドライエツチングの制御および終点検出方法
JPS6223113A (ja) * 1985-07-24 1987-01-31 Hitachi Ltd 終点検出方法
US4713141A (en) * 1986-09-22 1987-12-15 Intel Corporation Anisotropic plasma etching of tungsten
JPS6381929A (ja) * 1986-09-26 1988-04-12 Anelva Corp ドライエッチング終点検出方法
JPS63244847A (ja) * 1987-03-31 1988-10-12 Anelva Corp ドライエッチング終点検出方法
US4948462A (en) * 1989-10-20 1990-08-14 Applied Materials, Inc. Tungsten etch process with high selectivity to photoresist
EP0439101B1 (en) * 1990-01-22 1997-05-21 Sony Corporation Dry etching method
US5198072A (en) * 1990-07-06 1993-03-30 Vlsi Technology, Inc. Method and apparatus for detecting imminent end-point when etching dielectric layers in a plasma etch system

Also Published As

Publication number Publication date
KR970000694B1 (ko) 1997-01-18
JP3015540B2 (ja) 2000-03-06
US5261998A (en) 1993-11-16
JPH0590216A (ja) 1993-04-09

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