JPS5480197A - Semiconductor humidity sensor - Google Patents

Semiconductor humidity sensor

Info

Publication number
JPS5480197A
JPS5480197A JP14749577A JP14749577A JPS5480197A JP S5480197 A JPS5480197 A JP S5480197A JP 14749577 A JP14749577 A JP 14749577A JP 14749577 A JP14749577 A JP 14749577A JP S5480197 A JPS5480197 A JP S5480197A
Authority
JP
Japan
Prior art keywords
humidity
threshold value
humidity sensor
iron trioxide
compensating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14749577A
Other languages
Japanese (ja)
Inventor
Toshiharu Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP14749577A priority Critical patent/JPS5480197A/en
Publication of JPS5480197A publication Critical patent/JPS5480197A/en
Pending legal-status Critical Current

Links

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To obtain small-sized high-reliability humidity sensor capable of compensating humidity detection at low cost, by disposing transistors for humidity detection and reference on the same substrate.
CONSTITUTION: In the presence of moisture, when moisture enters an iron trioxide electrode 5, a separation layer is formed between the iron trioxide and gate oxide film boundary surface, and the work function between iron trioxide and silicon substrate varies, which causes the threshold value to be deviated. Thus, the change in the threshold value may be detected. However, since the MOS transistor has a large variation, two transistors are formed on the same substrate: one is used for detecting humidity and the other for detecting the change in the threshold value. By forming the two elements simultaneously, the surface of one element is coated with insulation film made of CVD-SiO2 or the like. By compensating the humidity in this way, a humidity sensor of high reliability may be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP14749577A 1977-12-08 1977-12-08 Semiconductor humidity sensor Pending JPS5480197A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14749577A JPS5480197A (en) 1977-12-08 1977-12-08 Semiconductor humidity sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14749577A JPS5480197A (en) 1977-12-08 1977-12-08 Semiconductor humidity sensor

Publications (1)

Publication Number Publication Date
JPS5480197A true JPS5480197A (en) 1979-06-26

Family

ID=15431669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14749577A Pending JPS5480197A (en) 1977-12-08 1977-12-08 Semiconductor humidity sensor

Country Status (1)

Country Link
JP (1) JPS5480197A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012018161A (en) * 2010-06-11 2012-01-26 Semiconductor Energy Lab Co Ltd Gas sensor and manufacturing method of gas sensor
WO2015114870A1 (en) * 2014-01-28 2015-08-06 シャープ株式会社 Gas sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012018161A (en) * 2010-06-11 2012-01-26 Semiconductor Energy Lab Co Ltd Gas sensor and manufacturing method of gas sensor
JP2015079993A (en) * 2010-06-11 2015-04-23 株式会社半導体エネルギー研究所 Semiconductor device
US9046482B2 (en) 2010-06-11 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Gas sensor and method for manufacturing the gas sensor
JP2017015721A (en) * 2010-06-11 2017-01-19 株式会社半導体エネルギー研究所 Semiconductor device
WO2015114870A1 (en) * 2014-01-28 2015-08-06 シャープ株式会社 Gas sensor

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