JPS5480197A - Semiconductor humidity sensor - Google Patents
Semiconductor humidity sensorInfo
- Publication number
- JPS5480197A JPS5480197A JP14749577A JP14749577A JPS5480197A JP S5480197 A JPS5480197 A JP S5480197A JP 14749577 A JP14749577 A JP 14749577A JP 14749577 A JP14749577 A JP 14749577A JP S5480197 A JPS5480197 A JP S5480197A
- Authority
- JP
- Japan
- Prior art keywords
- humidity
- threshold value
- humidity sensor
- iron trioxide
- compensating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
PURPOSE: To obtain small-sized high-reliability humidity sensor capable of compensating humidity detection at low cost, by disposing transistors for humidity detection and reference on the same substrate.
CONSTITUTION: In the presence of moisture, when moisture enters an iron trioxide electrode 5, a separation layer is formed between the iron trioxide and gate oxide film boundary surface, and the work function between iron trioxide and silicon substrate varies, which causes the threshold value to be deviated. Thus, the change in the threshold value may be detected. However, since the MOS transistor has a large variation, two transistors are formed on the same substrate: one is used for detecting humidity and the other for detecting the change in the threshold value. By forming the two elements simultaneously, the surface of one element is coated with insulation film made of CVD-SiO2 or the like. By compensating the humidity in this way, a humidity sensor of high reliability may be obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14749577A JPS5480197A (en) | 1977-12-08 | 1977-12-08 | Semiconductor humidity sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14749577A JPS5480197A (en) | 1977-12-08 | 1977-12-08 | Semiconductor humidity sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5480197A true JPS5480197A (en) | 1979-06-26 |
Family
ID=15431669
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14749577A Pending JPS5480197A (en) | 1977-12-08 | 1977-12-08 | Semiconductor humidity sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5480197A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012018161A (en) * | 2010-06-11 | 2012-01-26 | Semiconductor Energy Lab Co Ltd | Gas sensor and manufacturing method of gas sensor |
WO2015114870A1 (en) * | 2014-01-28 | 2015-08-06 | シャープ株式会社 | Gas sensor |
-
1977
- 1977-12-08 JP JP14749577A patent/JPS5480197A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012018161A (en) * | 2010-06-11 | 2012-01-26 | Semiconductor Energy Lab Co Ltd | Gas sensor and manufacturing method of gas sensor |
JP2015079993A (en) * | 2010-06-11 | 2015-04-23 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US9046482B2 (en) | 2010-06-11 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Gas sensor and method for manufacturing the gas sensor |
JP2017015721A (en) * | 2010-06-11 | 2017-01-19 | 株式会社半導体エネルギー研究所 | Semiconductor device |
WO2015114870A1 (en) * | 2014-01-28 | 2015-08-06 | シャープ株式会社 | Gas sensor |
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