JPS5480195A - Semiconductor humidity sensor - Google Patents

Semiconductor humidity sensor

Info

Publication number
JPS5480195A
JPS5480195A JP14749377A JP14749377A JPS5480195A JP S5480195 A JPS5480195 A JP S5480195A JP 14749377 A JP14749377 A JP 14749377A JP 14749377 A JP14749377 A JP 14749377A JP S5480195 A JPS5480195 A JP S5480195A
Authority
JP
Japan
Prior art keywords
gate
humidity sensor
oxide film
threshold value
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14749377A
Other languages
Japanese (ja)
Inventor
Toshiharu Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP14749377A priority Critical patent/JPS5480195A/en
Publication of JPS5480195A publication Critical patent/JPS5480195A/en
Pending legal-status Critical Current

Links

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To obtain a small-sized, high-reliability sensor at low cost, by using dielectric film having high dielectric constant between the gate and substrate of a humidity sensor using MOS transistor.
CONSTITUTION: Various oxides having dielectric constant of at least 10 times are provided berween silicon substrate 1 and gate to compose the gate construction. For instance, titanium oxide and magnesium oxide of 18 to 25 and titanium oxide film of 70 to 85 are used as the gate oxide film 4. Therefore, in the presence of moisture, when moisture enters a palladium electrode 5, a polarization layer is formed on the gate oxide film boundary surface, and the work function between the iron trioxide and silicon substrate varies, which causes the threshold value to be deviated. Thus, the change in the threshold value may be detected. In this way, a humidity sensor having extremely excellent humidity detecting sensitivity and response may be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP14749377A 1977-12-08 1977-12-08 Semiconductor humidity sensor Pending JPS5480195A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14749377A JPS5480195A (en) 1977-12-08 1977-12-08 Semiconductor humidity sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14749377A JPS5480195A (en) 1977-12-08 1977-12-08 Semiconductor humidity sensor

Publications (1)

Publication Number Publication Date
JPS5480195A true JPS5480195A (en) 1979-06-26

Family

ID=15431626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14749377A Pending JPS5480195A (en) 1977-12-08 1977-12-08 Semiconductor humidity sensor

Country Status (1)

Country Link
JP (1) JPS5480195A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017227561A (en) * 2016-06-23 2017-12-28 富士通株式会社 Gas sensor and usage of the gas sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017227561A (en) * 2016-06-23 2017-12-28 富士通株式会社 Gas sensor and usage of the gas sensor

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