KR970077329A - 강유전체막 및 그의 형성방법 - Google Patents
강유전체막 및 그의 형성방법 Download PDFInfo
- Publication number
- KR970077329A KR970077329A KR1019960017880A KR19960017880A KR970077329A KR 970077329 A KR970077329 A KR 970077329A KR 1019960017880 A KR1019960017880 A KR 1019960017880A KR 19960017880 A KR19960017880 A KR 19960017880A KR 970077329 A KR970077329 A KR 970077329A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- ferroelectric film
- ferroelectric
- forming
- time
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract 10
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000010408 film Substances 0.000 claims 9
- 239000000463 material Substances 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- 229910002367 SrTiO Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Formation Of Insulating Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
강유전체막을 제1가스로 소정의 시간동안 강유전체막의 일부를 형성하는 제1단계, 및 제2가스를 사용하여 잔여 공정시간 동안 상기 강유전체막의 나머지를 형성하는 제2단계에 걸쳐 형성함으로써, 박막의 표면이 균일하며, 유전률이 높고 누설전류가 감소된 억제된 강유전체막을 얻을 수 있다. 더 나아가, 상기 강유전체막 형성시에 사용되는 가스의 종류에 따라 강유전체의 결정구조를 임의로 조절 할 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5a도 내지 제5d도는 본 발명에 따른 강유전체막을 채용한 캐패시터의 제조단계를 나타내는 단면들이다.
Claims (10)
- 제1가스로 소정의 시간동안 강유전체막의 일부를 형성하는 제1단계, 및 제2가스를 사용하여 잔여 공정시간 동안 상기 강유전체막의 나머지를 형성하는 제2단계로 구성됨을 특징으로 하는 강유전체막의 증착방법.
- 제1항에 있어서, 상기 제2가스는 상기 제1가스를 일부 포함하는 혼합가스임을 특징으로 하는 강유전체막의 증착방법.
- 제1항에 있어서, 상기 제1가스는 N2O, O2, O3, NOX중의 어느 하나임을 특징으로 하는 강유전체막의 증착방법.
- 제2항에 있어서, 상기 제1가스는 O2이고, 상기 제2가스는 상기 제1가스와 N2O와의 혼합가스임을 특징으로 하는 강유전체막의 증착방법.
- 제1항에 있어서, 상기 제1단계에 요구되는 시간은 전체 공정시간의 1 내지 50%임을 특징으로 하는 강유전체막의 증착방법.
- 제1항에 있어서, 상기 강유전체는 SrTiO3, (Ba, Sr)TiO3, PbZrTiO3, SrBi2Ta2O9, (Pb, La)(Zr, Ti)O3, Bi4Ti3O12중의 어느 하나임을 특징으로 하는 강유전체막의 증착방법.
- 제1가스로 소정의 시간동안 강유전체 박막의 일부를 형성하는 제1단계 및 제2가스를 사용하여 잔여 공정 시간 동안 상기 강유전체 박막의 나머지를 형성하는 제2단계로 구성된 방법에 의해 형성됨을 특징으로 하는 강유전체막.
- 제7항에 있어서, 상기 제2가스는 상기 제1가스를 일부 포함하는 혼합가스임을 특징으로 하는 강유전체막.
- 제7항에 있어서, 상기 제1가스는 N2O, O2, O3, NOX중의 어느 하나임을 특징으로 하는 강유전체막.
- 제7항에 있어서, 상기 제1단계에 요구되는 시간은 전체 공정시간의 1 내지 50%임을 특징으로 하는 강유전체막.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960017880A KR0183868B1 (ko) | 1996-05-25 | 1996-05-25 | 강유전체막 및 그의 형성방법 |
JP08219597A JP4031552B2 (ja) | 1996-05-25 | 1997-03-14 | 半導体装置の膜形成方法 |
US08/843,506 US6127218A (en) | 1996-05-25 | 1997-04-16 | Methods for forming ferroelectric films using dual deposition steps |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960017880A KR0183868B1 (ko) | 1996-05-25 | 1996-05-25 | 강유전체막 및 그의 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970077329A true KR970077329A (ko) | 1997-12-12 |
KR0183868B1 KR0183868B1 (ko) | 1999-04-15 |
Family
ID=19459754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960017880A KR0183868B1 (ko) | 1996-05-25 | 1996-05-25 | 강유전체막 및 그의 형성방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6127218A (ko) |
JP (1) | JP4031552B2 (ko) |
KR (1) | KR0183868B1 (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100433465B1 (ko) * | 1998-08-03 | 2004-05-31 | 닛본 덴끼 가부시끼가이샤 | 금속산화물유전체막의 기상성장방법 및 금속산화물유전체재료의 기상성장을 위한 장치 |
JP3250664B2 (ja) * | 1999-05-25 | 2002-01-28 | 日本電気株式会社 | 半導体記憶素子の製造方法 |
KR20010030023A (ko) * | 1999-08-20 | 2001-04-16 | 마츠시타 덴끼 산교 가부시키가이샤 | 유전체막 및 그 제조방법 |
US6943392B2 (en) * | 1999-08-30 | 2005-09-13 | Micron Technology, Inc. | Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen |
US6558517B2 (en) | 2000-05-26 | 2003-05-06 | Micron Technology, Inc. | Physical vapor deposition methods |
US6566147B2 (en) | 2001-02-02 | 2003-05-20 | Micron Technology, Inc. | Method for controlling deposition of dielectric films |
US20030017266A1 (en) * | 2001-07-13 | 2003-01-23 | Cem Basceri | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer |
US6838122B2 (en) * | 2001-07-13 | 2005-01-04 | Micron Technology, Inc. | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers |
US7011978B2 (en) | 2001-08-17 | 2006-03-14 | Micron Technology, Inc. | Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions |
US6617178B1 (en) | 2002-07-02 | 2003-09-09 | Agilent Technologies, Inc | Test system for ferroelectric materials and noble metal electrodes in semiconductor capacitors |
US20040023416A1 (en) * | 2002-08-05 | 2004-02-05 | Gilbert Stephen R. | Method for forming a paraelectric semiconductor device |
JP2010267925A (ja) * | 2009-05-18 | 2010-11-25 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
JP2012166958A (ja) * | 2011-02-09 | 2012-09-06 | Ohara Inc | 酸化物単結晶の製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US3793605A (en) * | 1971-07-16 | 1974-02-19 | Signetics Corp | Ion sensitive solid state device and method |
EP0468758B1 (en) * | 1990-07-24 | 1997-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming insulating films, capacitances, and semiconductor devices |
JPH0582801A (ja) * | 1991-09-20 | 1993-04-02 | Rohm Co Ltd | 半導体集積回路のキヤパシタおよびこれを用いた不揮発性メモリ |
EP0557937A1 (en) * | 1992-02-25 | 1993-09-01 | Ramtron International Corporation | Ozone gas processing for ferroelectric memory circuits |
US5431958A (en) * | 1992-03-09 | 1995-07-11 | Sharp Kabushiki Kaisha | Metalorganic chemical vapor deposition of ferroelectric thin films |
JP2877618B2 (ja) * | 1992-07-06 | 1999-03-31 | シャープ株式会社 | 強誘電体膜の形成方法 |
US5442585A (en) * | 1992-09-11 | 1995-08-15 | Kabushiki Kaisha Toshiba | Device having dielectric thin film |
JPH06349324A (ja) * | 1993-06-04 | 1994-12-22 | Sharp Corp | 強誘電体薄膜の形成方法 |
US5499207A (en) * | 1993-08-06 | 1996-03-12 | Hitachi, Ltd. | Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same |
JP3328389B2 (ja) * | 1993-09-14 | 2002-09-24 | 康夫 垂井 | 強誘電体薄膜の製造方法 |
JPH07326783A (ja) * | 1994-05-30 | 1995-12-12 | Canon Inc | 光起電力素子の形成方法及びそれに用いる薄膜製造装置 |
US5478610A (en) * | 1994-09-02 | 1995-12-26 | Ceram Incorporated | Metalorganic chemical vapor deposition of layered structure oxides |
US5728603A (en) * | 1994-11-28 | 1998-03-17 | Northern Telecom Limited | Method of forming a crystalline ferroelectric dielectric material for an integrated circuit |
US5670218A (en) * | 1995-10-04 | 1997-09-23 | Hyundai Electronics Industries Co., Ltd. | Method for forming ferroelectric thin film and apparatus therefor |
US5824590A (en) * | 1996-07-23 | 1998-10-20 | Micron Technology, Inc. | Method for oxidation and crystallization of ferroelectric material |
-
1996
- 1996-05-25 KR KR1019960017880A patent/KR0183868B1/ko not_active IP Right Cessation
-
1997
- 1997-03-14 JP JP08219597A patent/JP4031552B2/ja not_active Expired - Fee Related
- 1997-04-16 US US08/843,506 patent/US6127218A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR0183868B1 (ko) | 1999-04-15 |
JPH1041486A (ja) | 1998-02-13 |
JP4031552B2 (ja) | 2008-01-09 |
US6127218A (en) | 2000-10-03 |
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