KR970071142A - 반사 방지 코팅용 조성물 - Google Patents
반사 방지 코팅용 조성물 Download PDFInfo
- Publication number
- KR970071142A KR970071142A KR1019970015053A KR19970015053A KR970071142A KR 970071142 A KR970071142 A KR 970071142A KR 1019970015053 A KR1019970015053 A KR 1019970015053A KR 19970015053 A KR19970015053 A KR 19970015053A KR 970071142 A KR970071142 A KR 970071142A
- Authority
- KR
- South Korea
- Prior art keywords
- weight
- composition
- water
- polyvinyl pyrrolidone
- sulfonic acid
- Prior art date
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Paints Or Removers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
본 발명은 퍼플루오로알킬 설폰산, 유기 아민, 폴리비닐 피롤리돈, 수용성 알킬실록산 중합체 및 물을 포함하는 반사 방지 코팅용 조성물에 관한 것이다. 본 발명의 조성물을 사용하면, 불용성 층의 형성이 감소되고 표면 층에 미립자와 결정상의 석출을 발생시키지 않으면 굴절율이 낮은 간섭 방지막을 형성시킬 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (8)
- 퍼플루오로알킬 설폰산, 유기 아민, 폴리비닐 피롤리돈, 수용성 알킬실록산 중합체 및 물을 포함하는 반사 방지 코팅용 조성물.
- 제1항에 있어서, 퍼플루오로알킬 설폰산이 화학식(1)의 화합물인 반사 방지 코팅용 조성물CnF2n+1SO3H (1)상기 식에서, n은 5 내지 10이다.
- 제1항에 있어서, 유기 아민이 모노에탈올아민인 반사 방지 코팅용 조성물.
- 제1항에 있어서, 폴리비닐 피롤리돈의 분자량이 1000 내지 10000인 반사 방지 코팅용 조성물.
- 제1항에 있어서, 수용성 알킬실록산 중합체가 화학식(2)의 화합물인 반사 방지 코팅용 조성물.상기 식에서, R1, R2, R3, 및 R4는 동일하거나 상이하고, 각각 -H, -OH, -CH3또는 -OH(CH2CH2O)mH이고, m은 1 내지 20이며, n'은 1 내지 10의 정수이다.
- 제1항에 있어서, 퍼플루오로알킬 설폰산 2 내지 7중량부, 유기 아민 0.2 내지 1중량부, 폴리비닐 피롤리돈 1중량부, 수용성 알킬실록산 0.001 내지 0.10중량부 및 물 50 내지 100중량부를 함유하는 반사 방지 코팅용 조성물.
- 제6항에 있어서, 폴리비닐 피롤리돈과 퍼플루오로알킬 설폰산의 배합 중량비가 1 : 3 내지 1 : 5이고 폴리비닐 피롤리돈과 유기 아민의 배합 중량비가 1 : 0.3 내지 1 : 1.5인 반사 방지 코팅용 조성물.
- 제6항에 있어서, 조성물 전체에서 점유하는 수용성 알킬실록산 중합체의 배합량이 0.01중량% 내지 0.5중량%인 반사 방지 코팅용 조성물.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP96-129056 | 1996-04-25 | ||
JP12905696A JP3694703B2 (ja) | 1996-04-25 | 1996-04-25 | 反射防止コーティング用組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970071142A true KR970071142A (ko) | 1997-11-07 |
KR100466058B1 KR100466058B1 (ko) | 2005-10-31 |
Family
ID=15000004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970015053A KR100466058B1 (ko) | 1996-04-25 | 1997-04-23 | 반사방지코팅용조성물 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5853471A (ko) |
EP (1) | EP0803776B1 (ko) |
JP (1) | JP3694703B2 (ko) |
KR (1) | KR100466058B1 (ko) |
CN (1) | CN1105757C (ko) |
DE (1) | DE69702566T2 (ko) |
TW (1) | TW373249B (ko) |
Families Citing this family (20)
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JP3673399B2 (ja) * | 1998-06-03 | 2005-07-20 | クラリアント インターナショナル リミテッド | 反射防止コーティング用組成物 |
US6984482B2 (en) | 1999-06-03 | 2006-01-10 | Hynix Semiconductor Inc. | Top-coating composition for photoresist and process for forming fine pattern using the same |
KR100401116B1 (ko) * | 1999-06-03 | 2003-10-10 | 주식회사 하이닉스반도체 | 아민오염방지 물질 및 이를 이용한 미세패턴 형성방법 |
US6824879B2 (en) * | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
US6890448B2 (en) | 1999-06-11 | 2005-05-10 | Shipley Company, L.L.C. | Antireflective hard mask compositions |
JP2001142221A (ja) * | 1999-11-10 | 2001-05-25 | Clariant (Japan) Kk | 反射防止コーティング用組成物 |
JP3320402B2 (ja) | 2000-06-26 | 2002-09-03 | クラリアント ジャパン 株式会社 | 現像欠陥防止プロセス及び材料 |
TW556047B (en) * | 2000-07-31 | 2003-10-01 | Shipley Co Llc | Coated substrate, method for forming photoresist relief image, and antireflective composition |
JP2002148820A (ja) * | 2000-11-15 | 2002-05-22 | Clariant (Japan) Kk | パターン形成方法及びこの方法に使用される処理剤 |
JP2003345026A (ja) * | 2002-05-24 | 2003-12-03 | Tokyo Ohka Kogyo Co Ltd | 反射防止膜形成用塗布液組成物およびこれを用いたホトレジスト積層体、並びにホトレジストパターンの形成方法 |
FR2842533B1 (fr) * | 2002-07-18 | 2006-11-24 | Hynix Semiconductor Inc | Composition de revetement organique antireflet, procede de formation de motifs de photoresist a l'aide de cette composition et dispositif a semi-conducteur fabrique grace a ce procede |
US6916594B2 (en) * | 2002-12-30 | 2005-07-12 | Hynix Semiconductor Inc. | Overcoating composition for photoresist and method for forming photoresist pattern using the same |
KR101156200B1 (ko) * | 2003-05-23 | 2012-06-18 | 다우 코닝 코포레이션 | 습식 에치율이 높은 실록산 수지계 반사 방지 피막 조성물 |
JP4355944B2 (ja) | 2004-04-16 | 2009-11-04 | 信越化学工業株式会社 | パターン形成方法及びこれに用いるレジスト上層膜材料 |
TWI362566B (en) * | 2004-06-30 | 2012-04-21 | Dainippon Ink & Chemicals | Composition for antireflection coating and pattern forming method |
EP1762895B1 (en) | 2005-08-29 | 2016-02-24 | Rohm and Haas Electronic Materials, L.L.C. | Antireflective Hard Mask Compositions |
CN101535430B (zh) * | 2006-11-14 | 2012-02-08 | 日产化学工业株式会社 | 低折射率被膜形成用涂布液及其制造方法以及防反射材料 |
US20080286689A1 (en) * | 2007-05-14 | 2008-11-20 | Hong Zhuang | Antireflective Coating Compositions |
JP2009175747A (ja) * | 2009-03-24 | 2009-08-06 | Honeywell Internatl Inc | フォトリソグラフィー用スピンオン反射防止膜 |
CN114686057B (zh) * | 2020-12-28 | 2023-06-02 | 中国科学院微电子研究所 | 一种图形化用抗反射涂层组合物及图形化方法 |
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-
1996
- 1996-04-25 JP JP12905696A patent/JP3694703B2/ja not_active Expired - Lifetime
-
1997
- 1997-04-04 EP EP97105624A patent/EP0803776B1/en not_active Expired - Lifetime
- 1997-04-04 DE DE69702566T patent/DE69702566T2/de not_active Expired - Lifetime
- 1997-04-09 US US08/838,665 patent/US5853471A/en not_active Expired - Lifetime
- 1997-04-14 TW TW086104781A patent/TW373249B/zh not_active IP Right Cessation
- 1997-04-23 KR KR1019970015053A patent/KR100466058B1/ko not_active IP Right Cessation
- 1997-04-24 CN CN97110125A patent/CN1105757C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1105757C (zh) | 2003-04-16 |
TW373249B (en) | 1999-11-01 |
EP0803776B1 (en) | 2000-07-19 |
EP0803776A2 (en) | 1997-10-29 |
KR100466058B1 (ko) | 2005-10-31 |
EP0803776A3 (en) | 1998-01-07 |
CN1168401A (zh) | 1997-12-24 |
DE69702566D1 (de) | 2000-08-24 |
JP3694703B2 (ja) | 2005-09-14 |
DE69702566T2 (de) | 2000-11-23 |
JPH09291228A (ja) | 1997-11-11 |
US5853471A (en) | 1998-12-29 |
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