KR970067965A - 박막 자기 저항성 디바이스 - Google Patents

박막 자기 저항성 디바이스 Download PDF

Info

Publication number
KR970067965A
KR970067965A KR1019960066066A KR19960066066A KR970067965A KR 970067965 A KR970067965 A KR 970067965A KR 1019960066066 A KR1019960066066 A KR 1019960066066A KR 19960066066 A KR19960066066 A KR 19960066066A KR 970067965 A KR970067965 A KR 970067965A
Authority
KR
South Korea
Prior art keywords
thin film
layer
magnetoresistive device
film magnetoresistive
layers
Prior art date
Application number
KR1019960066066A
Other languages
English (en)
Other versions
KR100245066B1 (ko
Inventor
순 조나탄 장홍
아루나바 구프타
강 액시애오
필립 루이스 트로일로드
필리페 피 레코에르
Original Assignee
포만 제프리 엘
인터내셔널 비지네스 머신즈 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 포만 제프리 엘, 인터내셔널 비지네스 머신즈 코포레이션 filed Critical 포만 제프리 엘
Publication of KR970067965A publication Critical patent/KR970067965A/ko
Application granted granted Critical
Publication of KR100245066B1 publication Critical patent/KR100245066B1/ko

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3213—Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/332—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using thin films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1171—Magnetic recording head with defined laminate structural detail

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)

Abstract

본 발명은 도핑된 페로브스카이트 망간산염 박막을 강자성 엘리먼트로서 사용하는 3층 구조의 박막 자기저항성 디바이스를 제공한다. 여기서, 전류는 3층 구조를 통해 전송된다. 약 2개의 인자(factor)의 많은 자기저항 변동은 엘리먼트 물질의 보자력(coercivity)에 근접한 150 Oe 미만의 낮은 자기 필드에서 이루어진다. 본 발명의 디바이스는 망간산염(manganates)의 하위 필드 스핀 종속 트랜스포트(low-field spin-dependent transport)가 달성되고, 그 결과의 자기저항의 크기는 자기정항성 필드 자기저항성 필드 센서 애플리케이션에 대해 안정한 것으로 입증되었다.

Description

박막 자기 저항성 디바이스
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도1은 본 발명의 자기저항(magnetoresistive) 장치의 개략적 사시도.

Claims (23)

  1. 3층 구조의 박막 자기저항성 디바이스(a tri-layer thin film magnetoresisyive device)에 있어서, 제1 또는 하부 박막 자기층(a first or bottom thin film magnetic layer)과, 제2 또는 중간층(a second or intermediate layer)과, 제3층 또는 상부 박막 자기층(a third top thin film magnetic layer)을 포함하며, 상기 제1 또는 제3층들중 적어도 하나는 도핑된 망간산염 페로브스카이트(a doped manganate perovskite)인 3층 구조의 박막 자기저항성 디바이스.
  2. 제1항에 있어서, 상기 제1 또는 제3층들중 다른쪽의 층도 또한 도핑된 망간산염 페로브스카이트인 3층 구조의 박막 자기저항성 디바이스.
  3. 제1항에 있어서, 상기 제1 또는 제3층들중 다른쪽의 층은 매우 높은 스핀 극성(a high degree of spin polarization)을 나타내는 강자성 엘리먼트 또는 소자(a ferromagnetic element or compound)인 3층 구조의 박막 자기저항성 디바이스.
  4. 제1항에 있어서, 상기 상기 제2층은 상기 제1층과 상기 제3층간에 자기적 결합을 하지만 이들 층사이에 전류가 통과되도록 하는 금속 또는 절연체인 3층 구조의 3층 구조의 박막 자기저항성 디바이스.
  5. 제1항에 있어서, 상기 제2층은 절연 터널링 장벽(an insulating tunneling barrier)인 3층 구조의 박막 자기저항성 디바이스.
  6. 제1항에 있어서, 상기 제2층은 산화 페로브스카이트(perovskite oxide)SrTiO3인 3층 구조의 박막 자기저항성 디바이스.
  7. 제1항에 있어서, 상기 제1 및 제3층은 LCMO 이고, 상기 제2층은 STO인 3층 구조의 박막 자기저항성 디바이스.
  8. 제1항에 있어서, 상기 제1 및 제3층은 LSMO 이고, 상기 제2층은 STO인 3층 구조의 박막 자기저항성 디바이스.
  9. 제1항에 있어서, 상기 제1자기 층은 기판상에 위치하는 3층 구조의 박막 자기저항성 디바이스.
  10. 제9항에 있어서, 상기 기판은 실리콘인 3층 구조의 박막 자기저항성 디바이스.
  11. 제9항에 있어서, 상기 기판은 SrTiO3인 3층 구조의 박막 자기저항성 디바이스.
  12. 3층 구조의 박막 자기저항성 디비이스에 있어서, 제1접점 전극과, 제1도는 하부 박막 자기층과, 제2 또는 중간층과, 제3 또는 상부 박막 자기층과, 제2 접점 전극을 포함하며, 상기 제1 또는 제3층들중 적어도 하나는 도핑된 망간산염 페로브스카이트인 3층 구조의 박막 자기저항성 디바이스.
  13. 제12항에 있어서, 상기 제1 또는 제3층들중 다른쪽 층도 또한 도핑된 망간산염 페로브스카이트인 3층 구조의 박막 자기저항성 디바이스.
  14. 제12항에 있어서, 상기 제2 또는 제3층들중 상기 다른쪽 층은 매우 높은 스핀 극성을 나타내는 강자성 엘리먼트 또는 합성물인 3층 구조의 박막 자기저항성 디바이스.
  15. 제12항에 있어서, 상기 제2층은 상기 제1층과 상기 제3층간에 자기적 결합을 차단하지만 이들 층 사이에 전류가 통과되도록 하는 통상의 금속 또는 절연체인 3층 구조의 박막 자기저항성 디바이스.
  16. 제12항에 있어서, 상기 제2층은 절연 터널링 장멱인 3층 구조의 박막 자기저항성 디바이스.
  17. 제12항에 있어서, 상기 제2층은 산화 페로브스카이트 SrTiO3인 3층 구조의 박막 자기저항성 디바이스.
  18. 제12항에 있어서, 상기 제1 및 제3층은 LSMO이고, 상기 제2층은 STO인 3층 구조의 박막 자기저항성 디바이스.
  19. 제12항에 있어서, 상기 제1 및 제3층은 LSMO이고, 상기 제2층은 STO인 3층 구조의 박막 자기저항성 디바이스.
  20. 제12항에 있어서, 상기 제3자기층과 상기 제2접점 전극 사이에 보호층(protective layer)을 더 포함하는 3층 구조의 박막 자기저항성 디바이스.
  21. 제12항에 있어서, 상기 제1자기층은 기판상에 위치되는 3층 구조의 박막 자기저항성 디바이스.
  22. 제12항에 있어서, 상기 기판은 실리콘인 3층 구조의 박막 자기저항성 디바이스.
  23. 제12항에 있어서, 상기 기판은 SrTiO3인 3층 구조의 박막 자기저항성 디바이스.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960066066A 1996-03-19 1996-12-14 박막 자기 저항 소자 KR100245066B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/618,184 1996-03-19
US8/618,184 1996-03-19
US08/618,184 US5792569A (en) 1996-03-19 1996-03-19 Magnetic devices and sensors based on perovskite manganese oxide materials

Publications (2)

Publication Number Publication Date
KR970067965A true KR970067965A (ko) 1997-10-13
KR100245066B1 KR100245066B1 (ko) 2000-02-15

Family

ID=24476662

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960066066A KR100245066B1 (ko) 1996-03-19 1996-12-14 박막 자기 저항 소자

Country Status (3)

Country Link
US (1) US5792569A (ko)
JP (1) JP3344691B2 (ko)
KR (1) KR100245066B1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010030439A (ko) * 1999-09-22 2001-04-16 아끼구사 나오유끼 자기 센서, 자기 헤드 및 자기 디스크 장치
KR100438342B1 (ko) * 2000-09-11 2004-07-02 가부시끼가이샤 도시바 터널 자기 저항 효과 디바이스 및 포터블 퍼스널 디바이스

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3012902B2 (ja) * 1997-03-18 2000-02-28 工業技術院長 光誘起相転移を用いたスイッチング素子及びメモリー素子
US6117571A (en) * 1997-03-28 2000-09-12 Advanced Technology Materials, Inc. Compositions and method for forming doped A-site deficient thin-film manganate layers on a substrate
JP3399785B2 (ja) * 1997-05-27 2003-04-21 富士通株式会社 圧電体装置及びその製造方法
US6232776B1 (en) * 1997-12-18 2001-05-15 Honeywell Inc. Magnetic field sensor for isotropically sensing an incident magnetic field in a sensor plane
JP3097667B2 (ja) 1998-06-30 2000-10-10 日本電気株式会社 磁気検出素子
US6204139B1 (en) 1998-08-25 2001-03-20 University Of Houston Method for switching the properties of perovskite materials used in thin film resistors
US6304083B1 (en) * 1998-09-15 2001-10-16 The United States Of America As Represented By The Secretary Of The Army Magnetic field sensor with colossal magneto-resistive material contained within the coil of an oscillator
JP3199114B2 (ja) * 1998-11-06 2001-08-13 日本電気株式会社 半導体装置の製造方法
TW446941B (en) * 1998-11-19 2001-07-21 Infineon Technologies Ag Magnetoresistive element
US6005800A (en) * 1998-11-23 1999-12-21 International Business Machines Corporation Magnetic memory array with paired asymmetric memory cells for improved write margin
ATE460085T1 (de) * 1999-02-22 2010-03-15 Nestle Sa Hydrokolloid enthaltende schokolade oder überzugzusammensetzung
JP3473835B2 (ja) * 1999-06-10 2003-12-08 Ｔｄｋ株式会社 薄膜磁気ヘッド集合体及びその処理方法
JP2001196661A (ja) * 1999-10-27 2001-07-19 Sony Corp 磁化制御方法、情報記憶方法、磁気機能素子および情報記憶素子
US6528993B1 (en) * 1999-11-29 2003-03-04 Korea Advanced Institute Of Science & Technology Magneto-optical microscope magnetometer
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
JP3565492B2 (ja) * 2000-02-17 2004-09-15 Ｔｄｋ株式会社 薄膜磁気ヘッド、磁気ヘッド装置及び磁気ディスク装置
US6594120B2 (en) * 2000-05-24 2003-07-15 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element and magnetic memory element and magnetic head using the same
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6590236B1 (en) 2000-07-24 2003-07-08 Motorola, Inc. Semiconductor structure for use with high-frequency signals
AU2001276980A1 (en) * 2000-07-24 2002-02-05 Motorola, Inc. Semiconductor structure including a magnetic tunnel junction
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US7242922B2 (en) * 2000-12-29 2007-07-10 Vesta Corporation Toll free calling account recharge system and method
DE10110292C1 (de) * 2001-02-26 2002-10-02 Dresden Ev Inst Festkoerper Stromabhängiges resistives Bauelement
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6473332B1 (en) 2001-04-04 2002-10-29 The University Of Houston System Electrically variable multi-state resistance computing
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6925001B2 (en) * 2001-06-28 2005-08-02 Sharp Laboratories Of America, Inc. Electrically programmable resistance cross point memory sensing method
US6693821B2 (en) * 2001-06-28 2004-02-17 Sharp Laboratories Of America, Inc. Low cross-talk electrically programmable resistance cross point memory
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030070620A1 (en) * 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US6759249B2 (en) * 2002-02-07 2004-07-06 Sharp Laboratories Of America, Inc. Device and method for reversible resistance change induced by electric pulses in non-crystalline perovskite unipolar programmable memory
JP3632086B2 (ja) * 2002-02-12 2005-03-23 国立大学法人名古屋大学 磁気抵抗膜の作製方法及び磁気抵抗膜
US6831854B2 (en) * 2002-08-02 2004-12-14 Unity Semiconductor Corporation Cross point memory array using distinct voltages
US6834008B2 (en) * 2002-08-02 2004-12-21 Unity Semiconductor Corporation Cross point memory array using multiple modes of operation
US6850429B2 (en) * 2002-08-02 2005-02-01 Unity Semiconductor Corporation Cross point memory array with memory plugs exhibiting a characteristic hysteresis
US6970375B2 (en) * 2002-08-02 2005-11-29 Unity Semiconductor Corporation Providing a reference voltage to a cross point memory array
US6753561B1 (en) 2002-08-02 2004-06-22 Unity Semiconductor Corporation Cross point memory array using multiple thin films
US6917539B2 (en) * 2002-08-02 2005-07-12 Unity Semiconductor Corporation High-density NVRAM
US6850455B2 (en) * 2002-08-02 2005-02-01 Unity Semiconductor Corporation Multiplexor having a reference voltage on unselected lines
US6798685B2 (en) * 2002-08-02 2004-09-28 Unity Semiconductor Corporation Multi-output multiplexor
US7084413B2 (en) * 2002-08-08 2006-08-01 Micron Technology, Inc. Photolithographic techniques for producing angled lines
CN100438114C (zh) * 2002-09-27 2008-11-26 中国科学院物理研究所 阵列式排列的掺杂钛酸锶和掺杂镧锰氧巨磁阻器件及制法
CN100438113C (zh) * 2002-09-27 2008-11-26 中国科学院物理研究所 巨磁阻器件单元阵列式排列的掺杂钛酸钡巨磁阻器件及制法
JP2004185755A (ja) * 2002-12-05 2004-07-02 Sharp Corp 不揮発性半導体記憶装置
US7265049B2 (en) * 2002-12-19 2007-09-04 Sandisk 3D Llc Ultrathin chemically grown oxide film as a dopant diffusion barrier in semiconductor devices
AU2003296988A1 (en) 2002-12-19 2004-07-29 Matrix Semiconductor, Inc An improved method for making high-density nonvolatile memory
US20050226067A1 (en) 2002-12-19 2005-10-13 Matrix Semiconductor, Inc. Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
US8637366B2 (en) 2002-12-19 2014-01-28 Sandisk 3D Llc Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
US7285464B2 (en) * 2002-12-19 2007-10-23 Sandisk 3D Llc Nonvolatile memory cell comprising a reduced height vertical diode
US7602000B2 (en) 2003-11-19 2009-10-13 International Business Machines Corporation Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
US7323732B2 (en) * 2004-03-03 2008-01-29 Macronix International Co., Ltd. MRAM array employing spin-filtering element connected by spin-hold element to MRAM cell structure for enhanced magnetoresistance
US20050230724A1 (en) * 2004-04-16 2005-10-20 Sharp Laboratories Of America, Inc. 3D cross-point memory array with shared connections
US7211446B2 (en) * 2004-06-11 2007-05-01 International Business Machines Corporation Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory
CN100369222C (zh) * 2004-07-13 2008-02-13 中国科学院物理研究所 在硅片上外延生长掺杂锰酸镧薄膜异质结材料的制备方法
US7307268B2 (en) 2005-01-19 2007-12-11 Sandisk Corporation Structure and method for biasing phase change memory array for reliable writing
JP4822287B2 (ja) * 2005-03-23 2011-11-24 独立行政法人産業技術総合研究所 不揮発性メモリ素子
US20080173975A1 (en) * 2007-01-22 2008-07-24 International Business Machines Corporation Programmable resistor, switch or vertical memory cell
CN101393963B (zh) * 2007-09-21 2010-07-21 中国科学院物理研究所 一种单晶NaCl势垒磁性隧道结及其用途
US7859025B2 (en) * 2007-12-06 2010-12-28 International Business Machines Corporation Metal ion transistor
CN101328611B (zh) * 2008-08-01 2011-06-15 中国科学技术大学 一种低场超大磁致电阻锰氧化物外延膜及其制备方法
US20130216800A1 (en) * 2010-01-21 2013-08-22 Joel D. Brock Perovskite to brownmillerite complex oxide crystal structure transformation induced by oxygen deficient getter layer
US8523312B2 (en) 2010-11-08 2013-09-03 Seagate Technology Llc Detection system using heating element temperature oscillations
EP2591471B1 (en) 2010-11-17 2017-05-10 Seagate Technology LLC Head transducer with multiple resistance temperature sensors for head-medium spacing and contact detection
US8866124B2 (en) 2011-02-02 2014-10-21 Sandisk 3D Llc Diodes with native oxide regions for use in memory arrays and methods of forming the same
JP5438707B2 (ja) 2011-03-04 2014-03-12 シャープ株式会社 可変抵抗素子及びその製造方法、並びに、当該可変抵抗素子を備えた不揮発性半導体記憶装置
ES2528865B2 (es) * 2014-08-21 2015-05-12 Universidade De Santiago De Compostela Dispositivo de medida de temperatura, método de fabricación del dispositivo y sistema de medida de punto de impacto que incorpora el dispositivo
CN113539654B (zh) * 2020-04-13 2023-05-02 中国科学院宁波材料技术与工程研究所 调控并增强lsmo薄膜磁各向异性的方法、磁各向异性可调的lsmo薄膜及其制备方法
CN111785832B (zh) * 2020-07-10 2022-12-09 西安交通大学 一种高分辨率的低温柔性应变电阻开关及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5390061A (en) * 1990-06-08 1995-02-14 Hitachi, Ltd. Multilayer magnetoresistance effect-type magnetic head
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
JPH06104505A (ja) * 1992-09-21 1994-04-15 Hitachi Ltd 磁気抵抗センサおよびそれを用いた磁気ヘッドおよび磁気記憶装置
DE4425356C2 (de) * 1993-09-29 1998-07-02 Siemens Ag Magnetoresistiver Sensor unter Verwendung eines Sensormaterials mit perowskitähnlicher Kristallstruktur
US5549977A (en) * 1993-11-18 1996-08-27 Lucent Technologies Inc. Article comprising magnetoresistive material
US5411814A (en) * 1994-01-26 1995-05-02 At&T Corp. Article comprising magnetoresistive oxide of La, Ca, Mn additionally containing either of both of Sr and Ba
US5538800A (en) * 1994-09-29 1996-07-23 At&T Corp. Magnetoresistive oxide material and articles comprising the material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010030439A (ko) * 1999-09-22 2001-04-16 아끼구사 나오유끼 자기 센서, 자기 헤드 및 자기 디스크 장치
KR100438342B1 (ko) * 2000-09-11 2004-07-02 가부시끼가이샤 도시바 터널 자기 저항 효과 디바이스 및 포터블 퍼스널 디바이스

Also Published As

Publication number Publication date
JP3344691B2 (ja) 2002-11-11
KR100245066B1 (ko) 2000-02-15
JPH1012945A (ja) 1998-01-16
US5792569A (en) 1998-08-11

Similar Documents

Publication Publication Date Title
KR970067965A (ko) 박막 자기 저항성 디바이스
US5936293A (en) Hard/soft magnetic tunnel junction device with stable hard ferromagnetic layer
TWI311812B (en) Tunnel transistors with spin-dependent output characteristics and their nonvolatile memory applications
EP1096500B1 (en) Magnetization control method and information storage method
US7755929B2 (en) Spin-injection device and magnetic device using spin-injection device
US6872467B2 (en) Magnetic field sensor with augmented magnetoresistive sensing layer
KR20180136556A (ko) 자기 터널 접합부
US20110058412A1 (en) Magnetic stack having assist layer
EP1571713A4 (en) DREHINJECTION DEVICE, MAGNETIC DEVICE USING THE SAME, THE MAGNETIC THIN FILM USED THEREIN
KR20010102906A (ko) 메모리 셀 어레이 및 그의 제조 방법
JPS63234489A (ja) 磁気固体装置
KR970012323A (ko) 자기저항효과 소자 및 메모리 소자
JPH03102699A (ja) 磁区クリープ除去用超伝導体保護装置を有する薄膜メモリ装置
JP2002111094A (ja) 磁気抵抗素子およびそれを用いた磁気センサ、メモリー装置
US6621732B2 (en) Magnetic element, memory device and write head
GB845605A (en) Non-destructive sensing of thin film magnetic cores
US6683359B2 (en) Hall effect device with multiple layers
US6590268B2 (en) Magnetic control device, and magnetic component and memory apparatus using the same
JP2001339110A (ja) 磁気制御素子とそれを用いた磁気部品及びメモリー装置
JPH0870149A (ja) 磁気抵抗素子
KR100446888B1 (ko) 자기저항효과막 및 그를 이용한 메모리
JP2004165441A (ja) 磁気抵抗効果素子及び磁気メモリ
US6646315B1 (en) Conductive film layer for hall effect device
US20040124484A1 (en) Spin-tunnel transistor and magnetic reproducing head
US20030189234A1 (en) Hall effect device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20081118

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee