KR970053894A - 반도체 소자의 웰 제조방법 - Google Patents

반도체 소자의 웰 제조방법 Download PDF

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Publication number
KR970053894A
KR970053894A KR1019950058881A KR19950058881A KR970053894A KR 970053894 A KR970053894 A KR 970053894A KR 1019950058881 A KR1019950058881 A KR 1019950058881A KR 19950058881 A KR19950058881 A KR 19950058881A KR 970053894 A KR970053894 A KR 970053894A
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South Korea
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layer
conductivity type
forming
impurity
impurity implantation
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KR1019950058881A
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KR0172828B1 (ko
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김종관
이상돈
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문정환
Lg 반도체주식회사
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Priority to KR1019950058881A priority Critical patent/KR0172828B1/ko
Publication of KR970053894A publication Critical patent/KR970053894A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)

Abstract

본 발명은 반도체 소자의 제조방법에 관한 것으로 특히, 공정을 단순화 하고 절연특성을 개선하는데 적합하도록 한 반도체 소자의 웰(Well) 제조방법에 관한 것이다. 이를 위한 본 발명의 반도체 소자의 웰 제조방법은 제1도전형 기판위에 산화막을 형성하고 고에너지를 이용한 이온주입 공정으로 상기 제 1 도전형 기판내에 제 2 도전형 제 1 불순물 주입층을 형성하는 단계, 상기 산화막위에 제1감광막을 패터닝하여 고에너지를 이용한 이온주입 공정으로 상기 제 2 도전형 제 1 불순물 주입층의 소정영역에 제 1 도전형 제 1 불순물 영역 영역을 형성하는 단계, 상기 산화막위에 질화막층을 형성하고 패터닝 하여 소자격리 영역에 필드 산화막을 형성하는 단계, 상기 필드 산화막이 형성된 기판 전면에 제 2 감광막을 도포하고 패터닝 하여 이온주입 공정으로 상기 제 1 도전형 제 1 불순물 영역 및 제 2 도전형 제 1 불순물 주입층위에 제 1 도전형 제 2 불순물 주입층을 형성하는 단계, 상기 필드 산호막이 형성된 기판 전면에 제 3 감광막을 도포하고 패터닝 하여 이온주입 공정으로 상기 제 1 도전형 제 2 불순물 주입층에 이웃하는 양쪽 영역에 제 2 도전형 제 2 불순물 주입층을 형성하는 단계, 상기 남아 있는 질화막을 제거하는 단계, 어닐링 공정으로 상기 제 1, 제 2 도전형 제 2 불순물 주입층을 확산하여 제 1, 제 2 도전형 웰을 형성하는 단계를 포함하여 이루어진다.
따라서, 공정이 간단하고 절연특성을 개선할 수 있다.

Description

반도체 소자의 웰 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 반도체 소자의 웰 제조 공정단면도.

Claims (1)

  1. 제 1 도전형 기판위에 산화막을 형성하고 고에너지를 이용한 이온주입 공정으로 상기 제 1 도전형 기판내에 제 2 도전형 제 1 불순물 주입층을 형성하는 단계, 상기 산화막위에 제 1 감광막을 패터닝 하여 고에너지를 이용한 이온주입 공정으로 상기 제 2 도전형 제 1 불순물 주입층의 소정영역에 제 1 도전형 제 1 불순물 영역을 형성하는 단계, 상기 산화막위에 질화막층을 형성하고 패터닝 하여 소자격리 영역에 필드 산화막을 형성하는 단계, 상기 필드 산화막이 형성된 기판 전면에 제 2 감광막을 도포하고 패터닝 하여 이온주입 공정으로 상기 제 1 도전형 제 1 불순물 영역 및 제 2 도전형 제 1 불순물 주입층위에 제 1 도전형 제 2 불순물 주입층을 형성하는 단계, 상기 필드 산화막이 형성된 기판 전면에 제 3 감광막을 도포하고 패터닝 하여 이온주입 공정으로 상기 제 1 도전형 제 2 불순물 주입층에 이웃하는 양쪽 영역에 제 2 도전형 제 2 불순물 주입층을 형성하는 단계, 상기 남아 있는 질화막을 제거하는 단계, 어닐링 공정으로 상기 제 1, 제 2 도전형 제 2 불순물 주입층을 확산하여 제 1, 제 2 도전형 웰을 형성하는 단계를 포함하여 이루어짐을 특징으로 하는 반도체 소자의 웰 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950058881A 1995-12-27 1995-12-27 반도체 소자의 웰 제조방법 KR0172828B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950058881A KR0172828B1 (ko) 1995-12-27 1995-12-27 반도체 소자의 웰 제조방법

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Application Number Priority Date Filing Date Title
KR1019950058881A KR0172828B1 (ko) 1995-12-27 1995-12-27 반도체 소자의 웰 제조방법

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KR970053894A true KR970053894A (ko) 1997-07-31
KR0172828B1 KR0172828B1 (ko) 1999-02-01

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