KR970030858A - 자기 메모리 및 메모리 형성 방법 - Google Patents

자기 메모리 및 메모리 형성 방법 Download PDF

Info

Publication number
KR970030858A
KR970030858A KR1019960033827A KR19960033827A KR970030858A KR 970030858 A KR970030858 A KR 970030858A KR 1019960033827 A KR1019960033827 A KR 1019960033827A KR 19960033827 A KR19960033827 A KR 19960033827A KR 970030858 A KR970030858 A KR 970030858A
Authority
KR
South Korea
Prior art keywords
magnetic
magnetic memory
memory
memory cell
conductor
Prior art date
Application number
KR1019960033827A
Other languages
English (en)
Other versions
KR100424962B1 (ko
Inventor
유진 첸
사이에드 엔. 테라니
마크 더람
쇼와동 티. 쥬
Original Assignee
빈센트 비. 인그라시아
모토로라 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 빈센트 비. 인그라시아, 모토로라 인코포레이티드 filed Critical 빈센트 비. 인그라시아
Publication of KR970030858A publication Critical patent/KR970030858A/ko
Application granted granted Critical
Publication of KR100424962B1 publication Critical patent/KR100424962B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)

Abstract

자기 메모리는 자기 메모리 셀의 내부에서 자기장을 집중시키는 자성체에 응용된다. 상기 자성체는 자기 메모리를 기록하고, 또 판독하는데 요구되는 전류의 양을 감소시킨다.

Description

자기 메모리 및 메모리 형성 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도6은 본 발명에 따른 자기 메모리 어레이를 확대 도시한 단면 사시도.

Claims (3)

  1. 자기 메모리(10, 25, 30, 35, 40)를 형성하는 방법에 있어서, 자기 메모리 셀 성분(14)을 덮어 씌우는 도체(12)를 형성하는 단계와, 상기 도체(12)에 의해 생성되는 자기장을 상기 도체(12)의 부분으로 부터 멀어지는 방향으로, 그리고 상기 자기장이 내부로 연장되어 있는 자기 메모리 셀성분(14)의 방향으로 집중시키는 단계를 포함하는 것을 특징으로 하는 자기 메모리 형성 방법.
  2. 자기 메모리(10, 25, 30, 35, 40)에 있어서, 기판(11)과, 상기 기판(11) 위에 위치하는 자기 메모리 셀 성분(14)과, GMR 자기 메모리 성분(14)을 덮어 씌우는 도체(12)와, 상기 도체(12)와 상기 자기 메모리 셀 성분(14) 사이에 위치하는 절연체(13)와, 도체(12)의 표면에 인접하는 자성체(17, 18, 31, 32, 41, 42, 44)를 포함하는 것을 특징으로 하는 자기 메모리.
  3. 자기 메모리(10, 25, 30, 35, 40)에 있어서, 기판(11)과, 상기 기판(11) 위에 위치하는 자기 메모리 셀 성분(14)과, 상기 자기 메모리 셀 성분(14)을 덮어 씌우는 도체(12)과, 상기 도체(12)의 표면에 인접하는 자성체(17, 18, 31, 32, 41, 42, 44)를 포함하는 것을 특징으로 하는 자기 메모리.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960033827A 1995-11-24 1996-08-16 자기메모리및그방법 KR100424962B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/562,482 US5659499A (en) 1995-11-24 1995-11-24 Magnetic memory and method therefor
US562,482 1995-11-24

Publications (2)

Publication Number Publication Date
KR970030858A true KR970030858A (ko) 1997-06-26
KR100424962B1 KR100424962B1 (ko) 2004-10-14

Family

ID=24246461

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960033827A KR100424962B1 (ko) 1995-11-24 1996-08-16 자기메모리및그방법

Country Status (5)

Country Link
US (1) US5659499A (ko)
EP (1) EP0776011B1 (ko)
JP (1) JP3831461B2 (ko)
KR (1) KR100424962B1 (ko)
DE (1) DE69626259T2 (ko)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5768183A (en) * 1996-09-25 1998-06-16 Motorola, Inc. Multi-layer magnetic memory cells with improved switching characteristics
US5861328A (en) * 1996-10-07 1999-01-19 Motorola, Inc. Method of fabricating GMR devices
US5898612A (en) * 1997-05-22 1999-04-27 Motorola, Inc. Magnetic memory cell with increased GMR ratio
JP4124844B2 (ja) * 1997-10-02 2008-07-23 キヤノン株式会社 磁気薄膜メモリ
US5956267A (en) * 1997-12-18 1999-09-21 Honeywell Inc Self-aligned wordline keeper and method of manufacture therefor
US6072718A (en) * 1998-02-10 2000-06-06 International Business Machines Corporation Magnetic memory devices having multiple magnetic tunnel junctions therein
US6219273B1 (en) 1998-03-02 2001-04-17 California Institute Of Technology Integrated semiconductor-magnetic random access memory system
US6269027B1 (en) * 1998-04-14 2001-07-31 Honeywell, Inc. Non-volatile storage latch
DE19836567C2 (de) * 1998-08-12 2000-12-07 Siemens Ag Speicherzellenanordnung mit Speicherelementen mit magnetoresistivem Effekt und Verfahren zu deren Herstellung
TW454187B (en) * 1998-09-30 2001-09-11 Siemens Ag Magnetoresistive memory with low current density
US6178111B1 (en) 1999-12-07 2001-01-23 Honeywell Inc. Method and apparatus for writing data states to non-volatile storage devices
DE10113853B4 (de) * 2000-03-23 2009-08-06 Sharp K.K. Magnetspeicherelement und Magnetspeicher
DE60135551D1 (de) * 2000-06-23 2008-10-09 Nxp Bv Magnetischer speicher
US6396733B1 (en) 2000-07-17 2002-05-28 Micron Technology, Inc. Magneto-resistive memory having sense amplifier with offset control
US6493258B1 (en) 2000-07-18 2002-12-10 Micron Technology, Inc. Magneto-resistive memory array
JP4309075B2 (ja) * 2000-07-27 2009-08-05 株式会社東芝 磁気記憶装置
US6392922B1 (en) 2000-08-14 2002-05-21 Micron Technology, Inc. Passivated magneto-resistive bit structure and passivation method therefor
US6363007B1 (en) 2000-08-14 2002-03-26 Micron Technology, Inc. Magneto-resistive memory with shared wordline and sense line
US6493259B1 (en) 2000-08-14 2002-12-10 Micron Technology, Inc. Pulse write techniques for magneto-resistive memories
US6724654B1 (en) 2000-08-14 2004-04-20 Micron Technology, Inc. Pulsed write techniques for magneto-resistive memories
US6538921B2 (en) 2000-08-17 2003-03-25 Nve Corporation Circuit selection of magnetic memory cells and related cell structures
DE10043947A1 (de) * 2000-09-06 2002-04-04 Infineon Technologies Ag Integrierte Schaltungsanordnung
US6555858B1 (en) * 2000-11-15 2003-04-29 Motorola, Inc. Self-aligned magnetic clad write line and its method of formation
CN100365843C (zh) * 2001-01-19 2008-01-30 松下电器产业株式会社 自旋开关和使用该自旋开关的磁存储元件
US6358756B1 (en) * 2001-02-07 2002-03-19 Micron Technology, Inc. Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme
JP2002246566A (ja) * 2001-02-14 2002-08-30 Sony Corp 磁気メモリ装置
US6780652B2 (en) * 2001-03-15 2004-08-24 Micron Technology, Inc. Self-aligned MRAM contact and method of fabrication
US6590803B2 (en) 2001-03-27 2003-07-08 Kabushiki Kaisha Toshiba Magnetic memory device
US6744086B2 (en) 2001-05-15 2004-06-01 Nve Corporation Current switched magnetoresistive memory cell
KR100442959B1 (ko) * 2001-05-22 2004-08-04 주식회사 하이닉스반도체 마그네틱 램 및 그 형성방법
KR100403313B1 (ko) * 2001-05-22 2003-10-30 주식회사 하이닉스반도체 바이폴라 접합 트랜지스터를 이용한 마그네틱 램 및 그형성방법
US6430085B1 (en) 2001-08-27 2002-08-06 Motorola, Inc. Magnetic random access memory having digit lines and bit lines with shape and induced anisotropy ferromagnetic cladding layer and method of manufacture
US6430084B1 (en) * 2001-08-27 2002-08-06 Motorola, Inc. Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layer
US6510080B1 (en) * 2001-08-28 2003-01-21 Micron Technology Inc. Three terminal magnetic random access memory
US6485989B1 (en) 2001-08-30 2002-11-26 Micron Technology, Inc. MRAM sense layer isolation
US6545906B1 (en) 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
US6636436B2 (en) * 2001-10-25 2003-10-21 Hewlett-Packard Development Company, L.P. Isolation of memory cells in cross point arrays
US6559511B1 (en) * 2001-11-13 2003-05-06 Motorola, Inc. Narrow gap cladding field enhancement for low power programming of a MRAM device
US6720597B2 (en) * 2001-11-13 2004-04-13 Motorola, Inc. Cladding of a conductive interconnect for programming a MRAM device using multiple magnetic layers
US6525957B1 (en) 2001-12-21 2003-02-25 Motorola, Inc. Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof
TWI266443B (en) * 2002-01-16 2006-11-11 Toshiba Corp Magnetic memory
JP3596536B2 (ja) 2002-03-26 2004-12-02 ソニー株式会社 磁気メモリ装置およびその製造方法
US6897532B1 (en) * 2002-04-15 2005-05-24 Cypress Semiconductor Corp. Magnetic tunneling junction configuration and a method for making the same
US6783995B2 (en) 2002-04-30 2004-08-31 Micron Technology, Inc. Protective layers for MRAM devices
US6724652B2 (en) * 2002-05-02 2004-04-20 Micron Technology, Inc. Low remanence flux concentrator for MRAM devices
US7095646B2 (en) 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
US6714441B1 (en) 2002-09-17 2004-03-30 Micron Technology, Inc. Bridge-type magnetic random access memory (MRAM) latch
JP3873015B2 (ja) * 2002-09-30 2007-01-24 株式会社東芝 磁気メモリ
JP3906139B2 (ja) * 2002-10-16 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
JP2004153181A (ja) * 2002-10-31 2004-05-27 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP3863484B2 (ja) * 2002-11-22 2006-12-27 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US6909630B2 (en) * 2002-12-09 2005-06-21 Applied Spintronics Technology, Inc. MRAM memories utilizing magnetic write lines
US6870759B2 (en) * 2002-12-09 2005-03-22 Applied Spintronics Technology, Inc. MRAM array with segmented magnetic write lines
US6909633B2 (en) * 2002-12-09 2005-06-21 Applied Spintronics Technology, Inc. MRAM architecture with a flux closed data storage layer
US6943038B2 (en) * 2002-12-19 2005-09-13 Freescale Semiconductor, Inc. Method for fabricating a flux concentrating system for use in a magnetoelectronics device
US6864551B2 (en) * 2003-02-05 2005-03-08 Applied Spintronics Technology, Inc. High density and high programming efficiency MRAM design
US6812538B2 (en) * 2003-02-05 2004-11-02 Applied Spintronics Technology, Inc. MRAM cells having magnetic write lines with a stable magnetic state at the end regions
US7002228B2 (en) * 2003-02-18 2006-02-21 Micron Technology, Inc. Diffusion barrier for improving the thermal stability of MRAM devices
US6940749B2 (en) * 2003-02-24 2005-09-06 Applied Spintronics Technology, Inc. MRAM array with segmented word and bit lines
US20040175845A1 (en) * 2003-03-03 2004-09-09 Molla Jaynal A. Method of forming a flux concentrating layer of a magnetic device
US6963500B2 (en) * 2003-03-14 2005-11-08 Applied Spintronics Technology, Inc. Magnetic tunneling junction cell array with shared reference layer for MRAM applications
JP4500257B2 (ja) * 2003-03-31 2010-07-14 独立行政法人科学技術振興機構 スピン依存伝達特性を有するトンネルトランジスタ及びそれを用いた不揮発性メモリ
US7067866B2 (en) * 2003-03-31 2006-06-27 Applied Spintronics Technology, Inc. MRAM architecture and a method and system for fabricating MRAM memories utilizing the architecture
US6933550B2 (en) * 2003-03-31 2005-08-23 Applied Spintronics Technology, Inc. Method and system for providing a magnetic memory having a wrapped write line
KR100552682B1 (ko) * 2003-06-02 2006-02-20 삼성전자주식회사 고밀도 자기저항 메모리 및 그 제조방법
US7477538B2 (en) * 2003-06-20 2009-01-13 Nec Corporation Magnetic random access memory
US6956763B2 (en) 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
US6967366B2 (en) 2003-08-25 2005-11-22 Freescale Semiconductor, Inc. Magnetoresistive random access memory with reduced switching field variation
US7112454B2 (en) 2003-10-14 2006-09-26 Micron Technology, Inc. System and method for reducing shorting in memory cells
US20050095855A1 (en) * 2003-11-05 2005-05-05 D'urso John J. Compositions and methods for the electroless deposition of NiFe on a work piece
US20050141148A1 (en) * 2003-12-02 2005-06-30 Kabushiki Kaisha Toshiba Magnetic memory
US7072209B2 (en) * 2003-12-29 2006-07-04 Micron Technology, Inc. Magnetic memory having synthetic antiferromagnetic pinned layer
US7310202B2 (en) * 2004-03-25 2007-12-18 Seagate Technology Llc Magnetic recording head with clad coil
US7339818B2 (en) 2004-06-04 2008-03-04 Micron Technology, Inc. Spintronic devices with integrated transistors
US7129098B2 (en) 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
US7738287B2 (en) * 2007-03-27 2010-06-15 Grandis, Inc. Method and system for providing field biased magnetic memory devices
US7833806B2 (en) * 2009-01-30 2010-11-16 Everspin Technologies, Inc. Structure and method for fabricating cladded conductive lines in magnetic memories
US8169816B2 (en) * 2009-09-15 2012-05-01 Magic Technologies, Inc. Fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory
US8390283B2 (en) 2009-09-25 2013-03-05 Everspin Technologies, Inc. Three axis magnetic field sensor
US8518734B2 (en) 2010-03-31 2013-08-27 Everspin Technologies, Inc. Process integration of a single chip three axis magnetic field sensor
JP5794892B2 (ja) * 2010-11-26 2015-10-14 ルネサスエレクトロニクス株式会社 磁気メモリ
US9472749B2 (en) 2014-03-20 2016-10-18 International Business Machines Corporation Armature-clad MRAM device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780848A (en) * 1986-06-03 1988-10-25 Honeywell Inc. Magnetoresistive memory with multi-layer storage cells having layers of limited thickness
JPH0293373A (ja) * 1988-09-29 1990-04-04 Nippon Denso Co Ltd 電流検出器
US5039655A (en) * 1989-07-28 1991-08-13 Ampex Corporation Thin film memory device having superconductor keeper for eliminating magnetic domain creep
US5173873A (en) * 1990-06-28 1992-12-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High speed magneto-resistive random access memory
US5343422A (en) * 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect

Also Published As

Publication number Publication date
EP0776011A2 (en) 1997-05-28
EP0776011A3 (en) 1997-11-19
JPH09204770A (ja) 1997-08-05
KR100424962B1 (ko) 2004-10-14
DE69626259T2 (de) 2003-07-24
US5659499A (en) 1997-08-19
JP3831461B2 (ja) 2006-10-11
EP0776011B1 (en) 2003-02-19
DE69626259D1 (de) 2003-03-27

Similar Documents

Publication Publication Date Title
KR970030858A (ko) 자기 메모리 및 메모리 형성 방법
EP0643393A3 (en) Semiconductor memory device with voltage boost circuit.
KR900003896A (ko) 반도체 메모리와 그 제조방법
TW343391B (en) Nonvolatile semiconductor memory and methods for manufacturing and using the same
EP1209747A3 (en) Semiconductor memory element
EP0597124A4 (en) SOLID STATE SEMICONDUCTOR MEMORY, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF.
EP0387834A3 (en) Semiconductor structure for processing and storing of information
DE69515669D1 (de) Negative Ladungspumpenschaltung für elektrisch löschbare Halbleiterspeichervorrichtung
EP0905790A3 (en) Nonvolatile semiconductor memory device and method for fabricating the same
TW326570B (en) Semiconductor integrated circuit apparatus and process thereof
DE69521393D1 (de) Integrierte Speicherschaltungsanordnung mit Spannungserhöher
JPS55156371A (en) Non-volatile semiconductor memory device
KR960039290A (ko) 반도체 장치
EP0908890A3 (en) Semiconductor integrated circuit device
KR920007199A (ko) 반도체기억장치
DE69626769D1 (de) Spannungspumpenschaltung für Halbleiterspeicheranordnung
DE3477102D1 (en) One-transistor memory cell for high-density integrated dynamic semiconductor memories, and method for manufacturing the same
WO2002009178A3 (en) Semiconductor device and a process for forming the same
NL1002280A1 (nl) Verbeterde verbindingsklem met wiggen voor geïntegreerde schakelingen.
KR970003929A (ko) 반도체장치
TW347577B (en) Bottom electrode structure for integrated circuit capacitors and method of making the same
KR900005463A (ko) 반도체 기억장치 및 그 제조방법
US5748550A (en) Multiple power line arrangement for a semiconductor memory device
EP0369676A3 (en) Semi-conductor non-volatile memory
KR950028154A (ko) 반도체 장치 및 그의 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130308

Year of fee payment: 10

FPAY Annual fee payment

Payment date: 20140310

Year of fee payment: 11

FPAY Annual fee payment

Payment date: 20150306

Year of fee payment: 12

FPAY Annual fee payment

Payment date: 20160308

Year of fee payment: 13

EXPY Expiration of term