KR970030218A - 알루미나 세라믹을 이용한 기판의 제조방법 - Google Patents

알루미나 세라믹을 이용한 기판의 제조방법 Download PDF

Info

Publication number
KR970030218A
KR970030218A KR1019950043682A KR19950043682A KR970030218A KR 970030218 A KR970030218 A KR 970030218A KR 1019950043682 A KR1019950043682 A KR 1019950043682A KR 19950043682 A KR19950043682 A KR 19950043682A KR 970030218 A KR970030218 A KR 970030218A
Authority
KR
South Korea
Prior art keywords
substrate
attaching
manufacturing
copper
alumina
Prior art date
Application number
KR1019950043682A
Other languages
English (en)
Other versions
KR100188227B1 (ko
Inventor
정동언
Original Assignee
정장호
엘지정보통신 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 정장호, 엘지정보통신 주식회사 filed Critical 정장호
Priority to KR1019950043682A priority Critical patent/KR100188227B1/ko
Publication of KR970030218A publication Critical patent/KR970030218A/ko
Application granted granted Critical
Publication of KR100188227B1 publication Critical patent/KR100188227B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

본 발명은 알루미나 세라믹을 이용한 기판의 제조 방법에 관한 것으로, 특히 고순도의 알루미나 세라믹을 이용하여 제작하여 매우 높은 주파수를 사용하는 RF 전력 분배기 등에 사용할 수 있는 알루미나 세라믹을 이용한 기판의 제조방법에 관한 것으로, 알루미나(Al₂O₃) 세라믹 기판에 티타늄(Ti), 파라듐(Pb), 그리고 구리(Cu) 등을 차례로 D·C 스퍼터링 방식으로 소정의 두께로 입히는 단계와, 음성 감광체를 기판에 부착한 다음 설계된 회로의 마스크를 대고 자외선 단색 광원으로 음성 감광체를 감광시킨 후 현상 공정을 거쳐 불필요한 감광체를 제거하는 단계와, 전도체인 구리(Cu), 니켈(Ni), 그리고 금(Au)을 차례로 전기 도금 방식으로 소정의 두께로 입힌 다음 하우징에 은 에폭시로 접합하는 단계와, 소정의 위치에 은 에폭시를 사용하여 커넥터를 부착하고 2Ag/62Sn/36Pn의 솔더를 이용하여 소자 및 핀 등을 부착하는 단계로 이루어진다.

Description

알루미나 세라믹을 이용한 기판의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따라 제작된 기판의 단면도.

Claims (1)

  1. 알루미나(Al2O3) 세라믹 기판에 티타늄(Ti), 파라듐(Pb), 그리고 구리(Cu) 등을 차례로 D·C 스퍼터링 방식으로 소정의 두께로 입히는 단계와, 음성 감광체를 기판에 부착한 다음 설계된 회로의 마스크를 대고 자외선 단색 광원으로 음성 감광체를 감광시킨 후 현상 공정을 거쳐 불필요한 감광체를 제거하는 단계와, 전도체인 구리(Cu), 니켈(Ni), 그리고 금(Au)을 차례로 전기 도금 방식으로 소정의 두께로 입힌 다음 하우징에 은 에폭시로 접합하는 단계와, 소정의 위치에 은 에폭시를 사용하여 커넥터를 부착하고 2Ag/62Sn/36Pn의 솔더를 이용하여 소자 및 핀 등을 부착하는 단계로 이루어지는 것을 특징으로 하는 알루미나 세라믹을 이용한 기판의 제조 방법.
KR1019950043682A 1995-11-24 1995-11-24 알루미나를 이용한 기판의 제조방법 KR100188227B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950043682A KR100188227B1 (ko) 1995-11-24 1995-11-24 알루미나를 이용한 기판의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950043682A KR100188227B1 (ko) 1995-11-24 1995-11-24 알루미나를 이용한 기판의 제조방법

Publications (2)

Publication Number Publication Date
KR970030218A true KR970030218A (ko) 1997-06-26
KR100188227B1 KR100188227B1 (ko) 1999-06-01

Family

ID=19435691

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950043682A KR100188227B1 (ko) 1995-11-24 1995-11-24 알루미나를 이용한 기판의 제조방법

Country Status (1)

Country Link
KR (1) KR100188227B1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100467200B1 (ko) * 2002-03-28 2005-01-24 (주) 케이엠씨 테크놀러지 이동통신용 세라믹 고주파 전력분배기 제조방법

Also Published As

Publication number Publication date
KR100188227B1 (ko) 1999-06-01

Similar Documents

Publication Publication Date Title
JP2552902B2 (ja) 相互接続形成方法
KR920001701A (ko) 반도체 장치 및 그 제조방법
GB1476886A (en) Ceramic printed circuit board structure
KR960019670A (ko) 반도체칩 패키지 및 그의 제조 방법
JPH0213949B2 (ko)
KR970030218A (ko) 알루미나 세라믹을 이용한 기판의 제조방법
KR100740436B1 (ko) 전해 도금 방식을 이용한 세라믹 소자의 전극 형성 방법
US5834833A (en) Electrical component having a selective cut-off conductor
EP0438742A1 (en) Method of fabricating a semiconductor device of thin package type
GB8515479D0 (en) Providing electrical connections to planar semiconductor devices
JPS61156792A (ja) 回路モジユ−ルの製造方法
JP2003057266A (ja) コンタクトプローブ及びその製造方法
JP2727870B2 (ja) フィルムキャリアテープ及びその製造方法
US6087585A (en) Micro-dimensional coupling conductor
JPH0432759Y2 (ko)
JPH0234986A (ja) 透光表示部を有する配線回路基板の製造方法
KR0144918B1 (ko) 리이드 프레임의 제조방법
JPH0472690A (ja) 微小リード付配線板の製造法
RU98101113A (ru) Корпус для монтажа кристалла интегральной схемы и способ ее монтажа
JPH09275178A (ja) 半導体パッケージとその製造方法
JPH02305208A (ja) 表面実装部品
JPH10163358A (ja) Ｉｃパッケージ等に用いるベース及びその製法
JP3573989B2 (ja) 半導体装置用回路基板の製造方法及びこれに使用する半導体装置用回路パターンを備えた半導体装置用回路基板
JPH02121360A (ja) 電子部品搭載用基板
JPH0657478B2 (ja) Ｉｃカ−ドの製造方法

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20011224

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee