KR970024246A - 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법 - Google Patents

액정 표시 장치용 박막 트랜지스터 기판의 제조 방법 Download PDF

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KR970024246A
KR970024246A KR1019950035796A KR19950035796A KR970024246A KR 970024246 A KR970024246 A KR 970024246A KR 1019950035796 A KR1019950035796 A KR 1019950035796A KR 19950035796 A KR19950035796 A KR 19950035796A KR 970024246 A KR970024246 A KR 970024246A
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South Korea
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laser
thin film
film transistor
transistor substrate
liquid crystal
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KR1019950035796A
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KR100188099B1 (ko
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진용석
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김광호
삼성전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 레이저를 이용하여 비정질 실리콘을 다결정 실리콘으로 변화시키면서 동시에 산화막은 형성할 수 있는 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법에 관한 것이다. 기판 위에 비정질 실리콘막을 형성하는 단계, 상기 비정질 실리콘막에 레이저를 쏘아 다결정 실리콘막으로 변화시키는 동시에 상기 다결정 실리콘막 위에 산화막을 형성하는 단계를 포함하는 제조 공정 순서를 갖는다.

Description

액정 표시 장치용 박막 트랜지스터 기판의 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 2 도는 (가)-(라)는 본 발명의 실시예에 따른 액정 표시 장치용 박막 트랜지스터 기판의 제조 공정 순서를 나타낸 단면도이다.

Claims (7)

  1. 기판 위에 비정질 실리콘막을 형성하는 단계, 상기 비정질 실리콘막에 레이저를 쏘아 다결정 실리콘막으로 변화시키는 동시에 상기 다결정 실리콘막 위에 산화막을 형성하는 단계를 포함하는 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법.
  2. 제1항에서, 상기 산화막 위에 CVD 방법으로 보조 산화막을 형성하는 단계를 더 포함하는 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법.
  3. 제1항에서, 상기 비정질 실리콘의 두께는 CVD 방법을 사용하여 두께가 400Å 내지 600Å정도로 형성하는 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법.
  4. 제1항에서, 상기 레이저는 엑시머 레이저를 사용하는 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법.
  5. 제4항에서, 상기 레이저는 에너지는 200mJ/cm2내지 400mJ/cm2의 크기로 형성하는 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법.
  6. 제1항에서, 상기 레이저에 의해 상기 비정질 실리콘막이 순간적으로 용융되었다가 식으면서 재결정화가 일어나면, 150mJ/cm2내지 250mJ/cm2으로 레이저를 재조사하는 공정을 더 포함하는 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법.
  7. 제1항에서, 상기 레이저 조사시 분위기는 수증기 또는 O2을 형성하는 액정 표시 장치용 박막 트랜지스터 기판의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950035796A 1995-10-17 1995-10-17 액정 표시 장치용 박막 트랜지스터 기판의 제조방법 KR100188099B1 (ko)

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KR1019950035796A KR100188099B1 (ko) 1995-10-17 1995-10-17 액정 표시 장치용 박막 트랜지스터 기판의 제조방법

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KR1019950035796A KR100188099B1 (ko) 1995-10-17 1995-10-17 액정 표시 장치용 박막 트랜지스터 기판의 제조방법

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KR970024246A true KR970024246A (ko) 1997-05-30
KR100188099B1 KR100188099B1 (ko) 1999-07-01

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100555195B1 (ko) * 1998-11-19 2006-03-03 샤프 가부시키가이샤 반도체 장치의 제조방법 및 반도체 장치
KR100606230B1 (ko) * 1999-08-19 2006-07-28 샤프 가부시키가이샤 반도체 장치의 제조방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100623251B1 (ko) 2004-02-19 2006-09-18 삼성에스디아이 주식회사 다결정 실리콘 박막의 제조 방법 및 이를 사용하여제조되는 다결정 실리콘을 사용하는 박막 트랜지스터

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100555195B1 (ko) * 1998-11-19 2006-03-03 샤프 가부시키가이샤 반도체 장치의 제조방법 및 반도체 장치
KR100606230B1 (ko) * 1999-08-19 2006-07-28 샤프 가부시키가이샤 반도체 장치의 제조방법

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