KR960702148A - 자성재료의 몸체에서 자화방향의 국부적 변화를 위한 장치 및 방법 (A method and a device for locally altering the magnetization) - Google Patents

자성재료의 몸체에서 자화방향의 국부적 변화를 위한 장치 및 방법 (A method and a device for locally altering the magnetization) Download PDF

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Publication number
KR960702148A
KR960702148A KR1019950704646A KR19950704646A KR960702148A KR 960702148 A KR960702148 A KR 960702148A KR 1019950704646 A KR1019950704646 A KR 1019950704646A KR 19950704646 A KR19950704646 A KR 19950704646A KR 960702148 A KR960702148 A KR 960702148A
Authority
KR
South Korea
Prior art keywords
magnetic
locally
bodies
layer
nonmetallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019950704646A
Other languages
English (en)
Korean (ko)
Inventor
마크 토마스 죤슨
브뢰더 프리드리히 요하네스 아리 덴
젤토 비베 스미츠
Original Assignee
제이.에프.엠 페닝
필립스 일렉트로닉스 엔.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제이.에프.엠 페닝, 필립스 일렉트로닉스 엔.브이. filed Critical 제이.에프.엠 페닝
Publication of KR960702148A publication Critical patent/KR960702148A/ko
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
    • G11B5/09—Digital recording
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
    • G11B5/245—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features comprising means for controlling the reluctance of the magnetic circuit in a head with single gap, for co-operation with one track
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/465—Arrangements for demagnetisation of heads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G11B2005/0005—Arrangements, methods or circuits
    • G11B2005/0008—Magnetic conditionning of heads, e.g. biasing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Thin Magnetic Films (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
KR1019950704646A 1994-02-21 1995-02-03 자성재료의 몸체에서 자화방향의 국부적 변화를 위한 장치 및 방법 (A method and a device for locally altering the magnetization) Ceased KR960702148A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP94200453 1994-02-21
EP94200453.2 1994-02-21
PCT/IB1995/000077 WO1995022820A1 (en) 1994-02-21 1995-02-03 A method and a device for locally altering the magnetization direction in a body of magnetic material

Publications (1)

Publication Number Publication Date
KR960702148A true KR960702148A (ko) 1996-03-28

Family

ID=8216662

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950704646A Ceased KR960702148A (ko) 1994-02-21 1995-02-03 자성재료의 몸체에서 자화방향의 국부적 변화를 위한 장치 및 방법 (A method and a device for locally altering the magnetization)

Country Status (9)

Country Link
US (1) US5691865A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0700564B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH08510095A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR960702148A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE69511017T2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
MY (1) MY130152A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SG (1) SG52781A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW256921B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO1995022820A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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JP3350311B2 (ja) 1995-09-22 2002-11-25 ティーディーケイ株式会社 磁性薄膜メモリ素子及び磁性薄膜メモリ
WO1997047982A2 (en) * 1996-06-12 1997-12-18 Philips Electronics N.V. A magneto-resistive magnetic field sensor
US5889641A (en) * 1997-05-05 1999-03-30 Seagate Technology, Inc. Magneto-resistive magneto-optical head
US5898547A (en) * 1997-10-24 1999-04-27 International Business Machines Corporation Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide
US5953248A (en) * 1998-07-20 1999-09-14 Motorola, Inc. Low switching field magnetic tunneling junction for high density arrays
US20040017721A1 (en) 1998-10-30 2004-01-29 Schwabe Nikolai Franz Gregoe Magnetic storage device
GB2343308B (en) * 1998-10-30 2000-10-11 Nikolai Franz Gregor Schwabe Magnetic storage device
JP2001196661A (ja) * 1999-10-27 2001-07-19 Sony Corp 磁化制御方法、情報記憶方法、磁気機能素子および情報記憶素子
US6272036B1 (en) * 1999-12-20 2001-08-07 The University Of Chicago Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage
JP3604617B2 (ja) * 2000-06-12 2004-12-22 富士通株式会社 磁気検出素子
EP1327251B1 (en) * 2000-10-17 2005-08-31 International Business Machines Corporation Magnetic element, memory device and write head
CN100520915C (zh) * 2001-07-24 2009-07-29 希捷科技有限公司 用于高各向异性介质的写入磁头
EP1423861A1 (en) * 2001-08-30 2004-06-02 Koninklijke Philips Electronics N.V. Magnetoresistive device and electronic device
US20030231437A1 (en) * 2002-06-17 2003-12-18 Childress Jeffrey R. Current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions and method for its fabrication
US6881993B2 (en) * 2002-08-28 2005-04-19 Micron Technology, Inc. Device having reduced diffusion through ferromagnetic materials
US6831312B2 (en) * 2002-08-30 2004-12-14 Freescale Semiconductor, Inc. Amorphous alloys for magnetic devices
US7352541B2 (en) * 2004-04-30 2008-04-01 Hitachi Global Storage Technologies Netherlands B.V. CPP GMR using Fe based synthetic free layer
US7349185B2 (en) 2004-07-30 2008-03-25 Hitachi Global Storage Technologies Netherlands, B.V. Three terminal magnetic sensor for magnetic heads with a semiconductor junction
CN101814294B (zh) * 2010-01-11 2012-05-30 清华大学 电写磁性存储器件及其装置、信息记录再现及制造方法
WO2011122078A1 (ja) * 2010-03-31 2011-10-06 株式会社日立製作所 磁気抵抗素子、磁気ディスク装置及び磁気抵抗記憶装置
US8724434B2 (en) 2012-03-23 2014-05-13 Tdk Corporation Magnetic recording system and magnetic recording device
US9520175B2 (en) 2013-11-05 2016-12-13 Tdk Corporation Magnetization controlling element using magnetoelectric effect

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US3604938A (en) * 1969-04-29 1971-09-14 Matsushita Electric Ind Co Ltd Method for operating electroluminescence display device
US4035060A (en) * 1973-09-21 1977-07-12 Dainippon Printing Co., Ltd Electro-optic device
JPS57113402A (en) * 1981-01-05 1982-07-14 Ricoh Co Ltd Method and device for vertical thermomagnetic recording
US5390061A (en) * 1990-06-08 1995-02-14 Hitachi, Ltd. Multilayer magnetoresistance effect-type magnetic head
US5341261A (en) * 1991-08-26 1994-08-23 International Business Machines Corporation Magnetoresistive sensor having multilayer thin film structure
US5432373A (en) * 1992-12-15 1995-07-11 Bell Communications Research, Inc. Magnetic spin transistor
US5343422A (en) * 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect
FR2702919B1 (fr) * 1993-03-19 1995-05-12 Thomson Csf Transducteur magnétorésistif et procédé de réalisation.
US5440233A (en) * 1993-04-30 1995-08-08 International Business Machines Corporation Atomic layered materials and temperature control for giant magnetoresistive sensor
US5408377A (en) * 1993-10-15 1995-04-18 International Business Machines Corporation Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor
US5585986A (en) * 1995-05-15 1996-12-17 International Business Machines Corporation Digital magnetoresistive sensor based on the giant magnetoresistance effect

Also Published As

Publication number Publication date
SG52781A1 (en) 1998-09-28
MY130152A (en) 2007-06-29
DE69511017T2 (de) 2000-02-24
TW256921B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1995-09-11
WO1995022820A1 (en) 1995-08-24
EP0700564A1 (en) 1996-03-13
DE69511017D1 (de) 1999-09-02
US5691865A (en) 1997-11-25
JPH08510095A (ja) 1996-10-22
EP0700564B1 (en) 1999-07-28

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Patent event date: 19951018

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