KR960042216A - 샌드블라스트레지스트용 감광성수지조성물 - Google Patents

샌드블라스트레지스트용 감광성수지조성물 Download PDF

Info

Publication number
KR960042216A
KR960042216A KR1019960014114A KR19960014114A KR960042216A KR 960042216 A KR960042216 A KR 960042216A KR 1019960014114 A KR1019960014114 A KR 1019960014114A KR 19960014114 A KR19960014114 A KR 19960014114A KR 960042216 A KR960042216 A KR 960042216A
Authority
KR
South Korea
Prior art keywords
compound
component
resin composition
photosensitive resin
group
Prior art date
Application number
KR1019960014114A
Other languages
English (en)
Other versions
KR100198725B1 (ko
Inventor
히로시 타케하나
테쯔오 야마모토
히로유키 오비야
류마 미즈사와
Original Assignee
스기야마 카즈히코
마쯔시다덴시코교 가부시기가이샤
나카네 히사시
토쿄오오카코교 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스기야마 카즈히코, 마쯔시다덴시코교 가부시기가이샤, 나카네 히사시, 토쿄오오카코교 가부시기가이샤 filed Critical 스기야마 카즈히코
Publication of KR960042216A publication Critical patent/KR960042216A/ko
Application granted granted Critical
Publication of KR100198725B1 publication Critical patent/KR100198725B1/ko

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C3/00—Abrasive blasting machines or devices; Plants
    • B24C3/32—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
    • B24C3/322—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks for electrical components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/04—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for treating only selected parts of a surface, e.g. for carving stone or glass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/035—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyurethanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/12—Production of screen printing forms or similar printing forms, e.g. stencils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/112—Cellulosic

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

본 발명에는, (a) 분자사슬말단에 히드록시기를 지닌 폴리에테르 또는 폴리에스테르화합물, 디이소시아네이트화합물 및히드록시기를 지닌 (메타)아크릴레이트화합물로부터 얻어진, 분자말단에 (메타)아크릴레이트기를 지닌 우레탄화합물; (b)산가 50∼250mgKOH/g의 알칼리가용성고분자화합물; 및 (c)광중합개시제를 함유하고, 상기 (a)성분을 형성하는, 분자사슬말단에 히드록시기를 지닌 폴리에스테르화합물이 락톤모노머의 고리열림중합에 의한 중합체 또는 폴리카보네이트디올인것을 특징으로 하는, 포토리소그래피패터닝후에 피처리체표면의 패턴식각용 샌드블라스팅에 대해서 레지스트재료로서 적합한 감광성수지조성물이 개시되어 있다.

Description

샌드블라스트레지스트용 감광성수지조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 감광성수지조성물을 이용한 감광성건조막의 적층구조를 도시한 종단면도.

Claims (14)

  1. (a) 분자사슬말단에 히드록시기를 지닌 폴리에테르 또는 폴리에스테르화합물과, 디이소시아네이트화합물과, 히드록시기를 지닌 (메타)아크릴레이트화합물로부터 얻어진, 분자말단에 (메타)아크릴레이트기를 지닌 우레탄화합물 100중량부; (b) 상기 (a) 성분과 (b) 성분과의 중량비가 30 : 70~95 : 5 범위내의 양이 되도록 한산가 50~250mgKOH/g의 알칼리가용성고분자화합물 및 (c) 광중합개시제, 0.1~20중량부를 균일한 혼합물로서 함유한 것을 특징으로 하는 샌드블라스팅에 대해서 레지스트로서 이용하기에 적합한 감광성수지조성물.
  2. 제1항에 있어서, 상기 (a)성분을 형성하는, 분자사슬말단에 히드록시기를 지닌 폴리에스테르화합물은 락톤모노머의 고리열림중합에 의한 중합체인 것을 특징으로 하는 감광성수지조성물.
  3. 제1항에 있어서, 상기 (a)성분을 형성하는, 분자사슬말단에 히드록시기를 지닌 폴리에스테르화합물을 폴리카보네이트디올인 것을 특징으로 하는 감광성수지조성물.
  4. 제1항에 있어서, 상기 (a)성분의 우레탄화합물을 일반식, CH2=CR2-CO-O-R1-(NH-CO-O-R3-O-CO-NH-R4-NH-CO-O-R3-O-CO-NH)n-R1-O-CO-CR|2=CH2
    (식중, R1은 알킬렌기 또는 알킬렌에테르기, R2는 수소원자 또는 메틸기, R3은 2개의 이소시아네이토기가 제거된 디이소시아네이트화합물의 레지듀, R4는 폴리에테르 또는 폴리에스테르화합물의 레지듀, n은 5이하의 양의 정수)으로 표시되는 것을 특징으로 하는 감광성수지조성물.
  5. 제1항에 있어서, 상기 (a)성분의 우레탄화합물의 분자량은 1000~30000 범위내인 것을 특징으로 하는 감광성수지조성물.
  6. 제1항에 있어서, 상기 (b)성분의 알칼리가용성고분자화합물은 (메타)아크릴산과 (메타)아크릴산에스테르와의 공중합체 및 카르복시기함유셀롤로스화합물로 이루어진 군에서 선택한 것을 특징으로 하는 감광성수지 조성물.
  7. 제4항에 있어서, 상기 (b)성분의 알칼리가용성고분자화합물은 (메타)아크릴산과 (메타)아크릴산에스테르와의 공중합체이고, (a)성분과 (b)성분과의 중량비는 35:65~85:15 범위내인 것을 특징으로 하는 감광성수지 조성물.
  8. 제4항에 있어서, 상기 (b)성분의 알칼리가용성고분자화합물은 카르복시기함유셀롤로스화합물이고 (a)성분과 (b)성분과의 중량비는 50:50~95:5 범위내인 것을 특징으로 하는 감광성수지조성물.
  9. 제1항에 있어서, 상기 (b)성분의 알칼리가용성고분자화합물의 산가는 80~200mgKOH/g 범위내인 것을 특징으로 하는 감광성수지조성물.
  10. 제1항에 있어서, 상기 (a)성분의 100중량부에 대해서 20중량부 이하의 양으로 (d)광중합성모노머를 더 함유한 것을 특징으로 하는 감광성수지조성물.
  11. (A)(a) 분자사슬말단에 히드록시기를 지닌 폴리에테르 또는 폴리에스테르화합물과, 디이소시아네이트화합물과, 히드록시기를 지닌 (메타)아크릴레이트화합물로부터 얻어진, 부자말단에 (메타)아크릴레이트기를 지닌 우레탄화합물 100중량부; (b) 상기 (a)성분과 (b)성분과의 중량비가 30 : 70~95 : 5 범위내의 양이 되도록 한 산가 50~250mgKOH/g의 알칼리가용성고분자화합물; 및 (c) 광중합개시제 0.1~20중량부를 균일한 혼합물로서 함유하는, 플라스틱수지막상에 형성된 감광성수지조성물층과; (B) 상기 (A)층의 표면상에 이형으로 유연하게 적층되어 상기 (A)층을 샌드위치하는 2개의 막을 구비하는 것을 특징으로 하는, 샌드블라스팅에 대해서 레지스트로서 적합하게 적층된 감광성건조막.
  12. 제11항에 있어서, 상기 (A)층의 두께는 10~100㎛ 범위내인 것을 특징으로 하는 감광성건조막.
  13. i) (a) 분자사슬말단에 히드록시기를 지닌 폴리에테르 또는 폴리에스테르화합물과, 디이소시아네이트화합물과, 히드록시기를 지닌 (메타)아크릴레이트화합물로부터 얻어진, 분자말단에 (메타)아크릴레이트기를 지닌 우레탄화합물 100중량부; (b) 상기 (a) 성분과 (b)성분과의 중량비가 30 : 70~95 : 5 범위내의 양이 되도록 한 산가 50~250mgKOH/g의 알칼리가용성고분자화합물 및 (c) 광중합개시제 0.1~20중량부를 균일한 혼합물로서 함유한 감광성수지조성물층을 피처리체표면상에 형성하고; ii) 상기 감광성수지조성물패턴층을 화학선에 노광시켜 패턴의 잠재상을 형성하괴; iii) 경화수지조성물의 패턴층이 잔재하는 잠재상을 레지스트로서 현상하고, iv) 피처리체의 패턴이 제거된 표면을 샌드블라스팅 처리하는 단계로 이루어진 것을 특징으로 하는 피처리체표면의 패턴식각방법.
  14. 제13항에 있어서, 표면이 패턴식각처리된 피처리체는 플라즈마표시패널인 것을 특징으로 하는 피처리체표면의 패턴식각방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960014114A 1995-05-01 1996-05-01 샌드블라스트레지스트용 감광성수지조성물 KR100198725B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-107703 1995-05-01
JP10770395A JP3638660B2 (ja) 1995-05-01 1995-05-01 感光性樹脂組成物、それを用いたサンドブラスト用感光性ドライフィルム及びそれを用いた食刻方法

Publications (2)

Publication Number Publication Date
KR960042216A true KR960042216A (ko) 1996-12-21
KR100198725B1 KR100198725B1 (ko) 1999-06-15

Family

ID=14465810

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960014114A KR100198725B1 (ko) 1995-05-01 1996-05-01 샌드블라스트레지스트용 감광성수지조성물

Country Status (7)

Country Link
US (3) US5756261A (ko)
EP (1) EP0741332B1 (ko)
JP (1) JP3638660B2 (ko)
KR (1) KR100198725B1 (ko)
CN (1) CN1082679C (ko)
DE (1) DE69609656T2 (ko)
TW (1) TW439014B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100519032B1 (ko) * 2000-11-07 2005-10-05 도쿄 오카 고교 가부시키가이샤 샌드블래스팅용 감광성 조성물 및 이를 사용한 감광성 필름

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW475098B (en) * 1995-10-27 2002-02-01 Tokyo Ohka Kogyo Co Ltd Photosensitive resin composition and photosensitive resin laminated film containing the same
CA2217084A1 (en) * 1996-10-30 1998-04-30 Tin-Tack Peter Cheung Hydrogenation catalysts and processes therewith
JPH1128667A (ja) * 1997-07-10 1999-02-02 Tokyo Ohka Kogyo Co Ltd サンドブラスト用プラスチック研磨材およびそれを用いたプラズマディスプレイパネル基板のサンドブラスト加工法、並びにサンドブラスト廃材の処理方法
CN1076868C (zh) * 1997-10-22 2001-12-26 研能科技股份有限公司 具保护层的晶片透孔加工法
US6096635A (en) * 1997-10-21 2000-08-01 Microjet Technology Co., Ltd. Method for creating via hole in chip
CN1077722C (zh) * 1997-10-21 2002-01-09 研能科技股份有限公司 具透明遮罩式晶片透孔加工法
TW513614B (en) 1997-12-18 2002-12-11 Nippon Synthetic Chem Ind Photosensitive resin composition
JPH11226874A (ja) * 1998-02-16 1999-08-24 Murata Mfg Co Ltd 凹溝加工方法
JP2000066391A (ja) * 1998-08-17 2000-03-03 Tokyo Ohka Kogyo Co Ltd サンドブラスト用感光性組成物及びそれを用いた感光性フィルム
US6322951B1 (en) * 1998-12-11 2001-11-27 Norton International, Inc. Photoimageable compositions having improved flexibility and stripping ability
CN1168576C (zh) * 1999-08-18 2004-09-29 皇家菲利浦电子有限公司 在板件上获得凹区或凹口图案的方法
KR20020006688A (ko) * 2000-01-25 2002-01-24 고지마 아끼로, 오가와 다이스께 광경화성 수지 조성물
US20040259027A1 (en) * 2001-04-11 2004-12-23 Munnelly Heidi M. Infrared-sensitive composition for printing plate precursors
JP4754101B2 (ja) * 2001-06-05 2011-08-24 日本合成化学工業株式会社 パターン形成方法
US7056639B2 (en) * 2001-08-21 2006-06-06 Eastman Kodak Company Imageable composition containing an infrared absorber with counter anion derived from a non-volatile acid
WO2003076541A1 (fr) * 2002-03-13 2003-09-18 Bridgestone Corporation Feuille adhesive photodurcissable, feuille de transfert photocurcissable, et support d'enregistrement d'informations optiques et son procede de preparation
US20040017136A1 (en) * 2002-07-26 2004-01-29 Yu-Heng Liu Figured and patterned casing of a host computer
KR100521999B1 (ko) * 2002-09-03 2005-10-18 주식회사 코오롱 샌드블래스트 레지스트용 감광성수지 조성물
US20040062896A1 (en) * 2002-09-26 2004-04-01 Picone Terrence F. Fractionally-releasable bonding layer for use in photo-sensitive laminate films
JP4509638B2 (ja) 2004-04-26 2010-07-21 東京応化工業株式会社 感光性樹脂組成物およびこれを用いた感光性ドライフィルム
JP4864375B2 (ja) * 2004-08-09 2012-02-01 ドンジン セミケム カンパニー リミテッド スペーサ用感光性樹脂組成物、スペーサ及び液晶表示素子
JP2006108500A (ja) * 2004-10-07 2006-04-20 Shin Etsu Polymer Co Ltd 導電パターンの形成方法
KR101071420B1 (ko) 2005-05-26 2011-10-07 코오롱인더스트리 주식회사 샌드블라스트 레지스트용 감광성 수지 조성물 및 이로부터제조된 드라이 필름 포토레지스트
JP4641898B2 (ja) * 2005-08-23 2011-03-02 旭化成イーマテリアルズ株式会社 感光性樹脂組成物及びその積層体
US8329065B2 (en) 2005-12-06 2012-12-11 Mitsubishi Rayon Co., Ltd. Carbon nanotube-containing composition, composite, and methods for producing them
US20070231541A1 (en) * 2006-03-31 2007-10-04 3M Innovative Properties Company Microstructured tool and method of making same using laser ablation
US20070235902A1 (en) * 2006-03-31 2007-10-11 3M Innovative Properties Company Microstructured tool and method of making same using laser ablation
JP4745110B2 (ja) * 2006-04-19 2011-08-10 東京応化工業株式会社 感光性組成物及びこの感光性組成物により形成されたカラーフィルタ
KR20080033711A (ko) * 2006-10-13 2008-04-17 엘지전자 주식회사 냉장고의 외장재 및 이의 제조방법
TWI316381B (en) * 2007-01-24 2009-10-21 Phoenix Prec Technology Corp Circuit board and fabrication method thereof
KR101103031B1 (ko) * 2010-07-13 2012-01-05 강연균 냉장 시약장
CN102380829B (zh) * 2010-08-31 2015-11-18 鸿富锦精密工业（深圳）有限公司 喷砂装置及形成图案的方法
JP5747626B2 (ja) * 2011-03-30 2015-07-15 大日本印刷株式会社 加飾シート及びこれを用いた加飾樹脂成形品
CN102964761A (zh) * 2011-09-02 2013-03-13 田菱精细化工（昆山）有限公司 喷砂加工立体保护膜用树脂组合物
CN106240845B (zh) * 2016-08-04 2019-10-18 北京空间飞行器总体设计部 一种被动式柔性太阳翼展收引导机构
US11106131B2 (en) * 2016-08-31 2021-08-31 Lawrence Livermore National Security, Llc Click-chemistry compatible structures, click-chemistry functionalized structures, and materials and methods for making the same
US10732502B2 (en) 2016-08-31 2020-08-04 Lawrence Livermore National Security, Llc Click-chemistry compatible structures, click-chemistry functionalized structures, and materials and methods for making the same
JP7246615B2 (ja) * 2017-12-20 2023-03-28 住友電気工業株式会社 プリント配線板の製造方法及び積層体
KR102539011B1 (ko) * 2020-11-17 2023-06-02 주식회사 엔피테크놀로지 연성인쇄회로기판 제조 방법
CN114621397B (zh) * 2020-12-11 2024-04-09 万华化学集团股份有限公司 一种用于免洗洗手液体系的增稠剂及其制备方法和应用

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3850770A (en) * 1969-10-24 1974-11-26 Kansai Paint Co Ltd Radiation curable compositions from acrylurethane resins
DE2822190A1 (de) * 1978-05-20 1979-11-22 Hoechst Ag Photopolymerisierbares gemisch
US4430416A (en) * 1980-06-27 1984-02-07 Asahi Kasei Kogyo Kabushiki Kaisha Transfer element for sandblast carving
DE3048502A1 (de) * 1980-12-22 1982-07-22 Hoechst Ag, 6000 Frankfurt Durch strahlung polymerisierbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
US4587186A (en) * 1982-05-13 1986-05-06 Asahi Kasei Kogyo Kabushiki Kaisha Mask element for selective sandblasting and a method
JPS608100A (ja) * 1983-06-28 1985-01-16 旭化成株式会社 吹き付け食刻方法
DE3427519A1 (de) * 1984-07-26 1986-02-06 Hoechst Ag, 6230 Frankfurt Durch strahlung polymerisierbares gemisch, darin enthaltenes mischpolymerisat und verfahren zur herstellung des mischpolymerisats
US4849321A (en) * 1985-06-20 1989-07-18 M&T Chemicals Inc. UV curable compositions for making improved solder mask coatings
US4764449A (en) * 1985-11-01 1988-08-16 The Chromaline Corporation Adherent sandblast photoresist laminate
CA1312040C (en) * 1985-12-19 1992-12-29 Joseph Victor Koleske Conformal coatings cured with actinic radiation
US5102774A (en) * 1986-12-08 1992-04-07 Armstrong World Industries, Inc. Photoimagable coating compositions which are developable in aqueous alkaline solutions and can be used for solder mask compositions
US4855077A (en) * 1988-04-20 1989-08-08 Takiron Co., Ltd. Sticking agent of ionic-conductive polymer
JP3394799B2 (ja) * 1993-09-13 2003-04-07 パイオニア株式会社 プラズマディスプレイ装置
EP0674225A1 (en) * 1994-03-16 1995-09-27 Hitachi Chemical Company, Ltd. Photosensitive resin composition and photosensitive film
JP3684603B2 (ja) * 1995-01-26 2005-08-17 松下電器産業株式会社 プラズマディスプレイパネルの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100519032B1 (ko) * 2000-11-07 2005-10-05 도쿄 오카 고교 가부시키가이샤 샌드블래스팅용 감광성 조성물 및 이를 사용한 감광성 필름

Also Published As

Publication number Publication date
JPH08305017A (ja) 1996-11-22
US5756261A (en) 1998-05-26
DE69609656T2 (de) 2001-04-12
CN1082679C (zh) 2002-04-10
DE69609656D1 (de) 2000-09-14
EP0741332A1 (en) 1996-11-06
US5924912A (en) 1999-07-20
EP0741332B1 (en) 2000-08-09
CN1140843A (zh) 1997-01-22
JP3638660B2 (ja) 2005-04-13
TW439014B (en) 2001-06-07
US5916738A (en) 1999-06-29
KR100198725B1 (ko) 1999-06-15

Similar Documents

Publication Publication Date Title
KR960042216A (ko) 샌드블라스트레지스트용 감광성수지조성물
EP0468745B1 (en) Flexographic printing plate process
US5215859A (en) Backside ionizing irradiation in a flexographic printing plate process
US5015556A (en) Flexographic printing plate process
KR101711683B1 (ko) 레지스트 보호막 재료 및 패턴 형성 방법
US4023973A (en) Photosensitive composition using maleic anhydride adduct of a 1,2 polybutadiene
US4264705A (en) Multilayered elastomeric printing plate
AU653246B2 (en) Flexographic printing plate
EP2812758A1 (en) Photocurable composition
EP0427950A2 (en) A photosensitive resin composition for use in forming a relief structure
US4401749A (en) Multi-layer elements suitable for the production of printing plates and relief plates, and their production
Reichmanis et al. Radiation chemistry of polymeric materials: novel chemistry and applications for microlithography
US5728508A (en) Method of forming resist pattern utilizing fluorinated resin antireflective film layer
KR950027483A (ko) 감광성 수지 조성물 및 감광성 필름
EP1032866A1 (en) Solid-capped liquid photopolymer printing elements
US4339527A (en) Process for using photopolymerizable compositions
EP0468667A2 (en) Flexographic printing plate compositions
KR100191086B1 (ko) 광경화성 조성물
JPH02161437A (ja) 光重合性組成物
JP2023148940A (ja) サンドブラスト用感光性フィルム
JP2005181931A (ja) 表面保護膜および表面保護フィルム
JPH0694493B2 (ja) 感光性重合組成物
JPS6163843A (ja) 印刷用合成樹脂版のエツチング方法
JPH06202322A (ja) 光重合性組成物
JPS62292816A (ja) 感光重合性組成物

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19960501

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19960501

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19980715

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19981221

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 19990302

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 19990303

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20020223

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20030211

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20040225

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20050218

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20060223

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20070228

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20080225

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20090225

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20100223

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20110222

Start annual number: 13

End annual number: 13

PR1001 Payment of annual fee

Payment date: 20120223

Start annual number: 14

End annual number: 14

FPAY Annual fee payment

Payment date: 20130227

Year of fee payment: 15

PR1001 Payment of annual fee

Payment date: 20130227

Start annual number: 15

End annual number: 15

FPAY Annual fee payment

Payment date: 20140204

Year of fee payment: 16

PR1001 Payment of annual fee

Payment date: 20140204

Start annual number: 16

End annual number: 16

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

Termination category: Default of registration fee

Termination date: 20160209