KR960036225A - 표면광 레이저 - Google Patents

표면광 레이저 Download PDF

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Publication number
KR960036225A
KR960036225A KR1019950006215A KR19950006215A KR960036225A KR 960036225 A KR960036225 A KR 960036225A KR 1019950006215 A KR1019950006215 A KR 1019950006215A KR 19950006215 A KR19950006215 A KR 19950006215A KR 960036225 A KR960036225 A KR 960036225A
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KR
South Korea
Prior art keywords
layer
light
reflector layer
electrode
incident
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KR1019950006215A
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English (en)
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KR0160684B1 (ko
Inventor
이용희
신현국
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950006215A priority Critical patent/KR0160684B1/ko
Priority to JP05934396A priority patent/JP3288573B2/ja
Priority to GB9605931A priority patent/GB2299207B/en
Priority to US08/620,324 priority patent/US5753941A/en
Priority to DE19611393A priority patent/DE19611393B4/de
Priority to CNB961031743A priority patent/CN1159808C/zh
Publication of KR960036225A publication Critical patent/KR960036225A/ko
Application granted granted Critical
Publication of KR0160684B1 publication Critical patent/KR0160684B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18327—Structure being part of a DBR
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 광출력 특성을 개선한 표면광 레이저에 관한 것이다.
이 표면광 레이저는 전원의 한 전극이 접속되도록 된 기판(30)과, 이 기판(30)상에 위치하며 인가 전원에 따라 전자 또는 정공을 생성하고 그 표면에 입사되는 광을 대부분 반사시키고 일부를 투과시키도록 반도체 물질로 된 제1반사기층(32)과, 제1반사기층(32) 상에 위치하고 전자와 정공의 재결합에 의해 레이저 광을 생성하는 활성층(34)과, 상기 활성층(34) 상에 위치하고 상기 제1반사기층(32)과 다른 반도체형으로 되고 입사되는 광을 대부분 반사시키고 일부를 투과시키도록 된 제2반사기층(36)과, 상기 제2반사기층(36) 상에 적층되고 상기 전원의 다른 전극이 접속되며 상기 반사기층을 통과한 광이 출사하는 공동(46)을 가지는 전극층(40)으로 이루어진 표면광 레이저에 있어서, 상기 전극층(40)이 전원이 직접인가되고 전기전도도가 높은 금속층(44)과, 상기 제1반사기층(32)을 투과하여 표면으로 입사하는 광을 대부분 흡수하도록 된 도전성 저반사층(42)을 포함하도록 된 것을 특징으로 한다.

Description

표면광 레이저
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 표면광 레이저의 개략적인 구성을 보인 단면도, 제2도는 본 발명에 따른 표면광 레이저의 개략적인 구성을 보인 단면도.

Claims (2)

  1. 전원의 한 전극이 접속되도록 된 기판과, 이 기판 상에 위치하며 인가 전원에 따라 전자 또는 정공을 생성하고 그 표면에 입사되는 광을 대부분 반사시키고 일부를 투과시키도록 반도체 물질로 된 제1반사기층과, 이 제1반사기층 상에 위치하고 전자와 정공의 재결합에 의해 레이저 광을 생성하는 활성층과, 상기 활성층 상에 위치하고 상기 제1반사기층과 다른 반도체형으로 되고 입사되는 광을 대부분 반사시키고 일부를 투과시키도록 된 제2반사기층과, 상기 제2반사기층 상에 적층되고 상기 전원의 다른 전극이 접속되며 상기 반사기층을 통과한 광이 출사하는 공동을 가지는 전극층으로 이루어진 표면광 레이저에 있어서, 상기 전극층이 전원이 직접 인가되고 전기전도도가 높은 금속층과, 상기 제1반사기층을 투과하여 표면으로 입사하는 광을 대부분 흡수하도록 된 도전성 저반사층으로 포함하도록 된 것을 특징으로 하는 표면광 레이저.
  2. 제1항에 있어서, 상기 제2반사기층에는 상기 전극층의 공동으로 출사되는 광량을 증대시키기 위하여 소정 직경의 공동을 가지는 고저항부가 이온주입 또는 양성자 주입되어 형성된 것을 특징으로 하는 표면광 레이저.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950006215A 1995-03-23 1995-03-23 표면광 레이저 KR0160684B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019950006215A KR0160684B1 (ko) 1995-03-23 1995-03-23 표면광 레이저
JP05934396A JP3288573B2 (ja) 1995-03-23 1996-03-15 表面光レ−ザ
GB9605931A GB2299207B (en) 1995-03-23 1996-03-21 Vertical cavity surface emitting laser
US08/620,324 US5753941A (en) 1995-03-23 1996-03-22 Vertical cavity surface emitting laser
DE19611393A DE19611393B4 (de) 1995-03-23 1996-03-22 Vertikalhohlraumresonator-Oberflächenemissionslaser (VCSEL)
CNB961031743A CN1159808C (zh) 1995-03-23 1996-03-22 垂直腔表面发射激光器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950006215A KR0160684B1 (ko) 1995-03-23 1995-03-23 표면광 레이저

Publications (2)

Publication Number Publication Date
KR960036225A true KR960036225A (ko) 1996-10-28
KR0160684B1 KR0160684B1 (ko) 1999-02-01

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ID=19410426

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950006215A KR0160684B1 (ko) 1995-03-23 1995-03-23 표면광 레이저

Country Status (6)

Country Link
US (1) US5753941A (ko)
JP (1) JP3288573B2 (ko)
KR (1) KR0160684B1 (ko)
CN (1) CN1159808C (ko)
DE (1) DE19611393B4 (ko)
GB (1) GB2299207B (ko)

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JP3797748B2 (ja) * 1997-05-30 2006-07-19 シャープ株式会社 発光ダイオードアレイ
JP3697903B2 (ja) 1998-07-06 2005-09-21 富士ゼロックス株式会社 面発光レーザおよび面発光レーザアレイ
US6542527B1 (en) 1998-08-27 2003-04-01 Regents Of The University Of Minnesota Vertical cavity surface emitting laser
DE19904374A1 (de) * 1999-02-03 2000-08-17 Osram Opto Semiconductors Gmbh Berührungssensitive Eingabefläche
AU2000258686A1 (en) * 1999-06-02 2001-12-17 Cielo Communications, Inc. Single mode vertical cavity surface emitting laser
US6751245B1 (en) 1999-06-02 2004-06-15 Optical Communication Products, Inc. Single mode vertical cavity surface emitting laser
WO2001017079A1 (en) * 1999-08-30 2001-03-08 Siros Technologies, Inc. Near field optical apparatus
US7095767B1 (en) * 1999-08-30 2006-08-22 Research Investment Network, Inc. Near field optical apparatus
US6277668B1 (en) 2000-01-04 2001-08-21 Lucent Technologies, Inc. Optical detector for minimizing optical crosstalk
US6937637B1 (en) 2000-02-01 2005-08-30 Research Investment Network, Inc. Semiconductor laser and associated drive circuit substrate
US6963530B1 (en) 2000-02-01 2005-11-08 Research Investment Network, Inc. Near-field optical head system with integrated slider and laser
US7069569B2 (en) * 2000-02-01 2006-06-27 Research Investment Network, Inc. Near-field optical head system with integrated slider and laser
US6515305B2 (en) 2000-09-18 2003-02-04 Regents Of The University Of Minnesota Vertical cavity surface emitting laser with single mode confinement
US6529541B1 (en) 2000-11-13 2003-03-04 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser
US6650683B2 (en) * 2000-11-20 2003-11-18 Fuji Xerox Co, Ltd. Surface emitting semiconductor laser
US6768757B2 (en) * 2002-03-29 2004-07-27 Nortel Networks, Ltd. Cavity mirror for optically-pumped vertical-cavity surface-emitting laser (VCSEL)
US6717974B2 (en) * 2002-04-01 2004-04-06 Lumei Optoelectronics Corporation Apparatus and method for improving electrical conduction structure of a vertical cavity surface emitting laser
US7218660B2 (en) * 2003-10-27 2007-05-15 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Single-mode vertical cavity surface emitting lasers and methods of making the same
JP2009049267A (ja) * 2007-08-22 2009-03-05 Toshiba Corp 半導体発光素子及びその製造方法
TWI404925B (zh) * 2008-05-28 2013-08-11 Delta Electronics Inc 生物感測器
KR101103963B1 (ko) * 2009-12-01 2012-01-13 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP6208051B2 (ja) 2014-03-06 2017-10-04 大同特殊鋼株式会社 点光源発光ダイオード

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US5086430A (en) * 1990-12-14 1992-02-04 Bell Communications Research, Inc. Phase-locked array of reflectivity-modulated surface-emitting lasers
US5212703A (en) * 1992-02-18 1993-05-18 Eastman Kodak Company Surface emitting lasers with low resistance bragg reflectors
US5274655A (en) * 1992-03-26 1993-12-28 Motorola, Inc. Temperature insensitive vertical cavity surface emitting laser
US5317587A (en) * 1992-08-06 1994-05-31 Motorola, Inc. VCSEL with separate control of current distribution and optical mode
US5351257A (en) * 1993-03-08 1994-09-27 Motorola, Inc. VCSEL with vertical offset operating region providing a lateral waveguide and current limiting and method of fabrication
JPH06291406A (ja) * 1993-03-31 1994-10-18 Fujitsu Ltd 面発光半導体レーザ
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Also Published As

Publication number Publication date
GB2299207B (en) 1999-05-12
CN1137188A (zh) 1996-12-04
JP3288573B2 (ja) 2002-06-04
KR0160684B1 (ko) 1999-02-01
GB2299207A (en) 1996-09-25
JPH08274408A (ja) 1996-10-18
CN1159808C (zh) 2004-07-28
DE19611393B4 (de) 2005-07-28
US5753941A (en) 1998-05-19
DE19611393A1 (de) 1996-09-26
GB9605931D0 (en) 1996-05-22

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