KR970072513A - 얇은 절연층을 삽입한 전기 발광소자 - Google Patents

얇은 절연층을 삽입한 전기 발광소자 Download PDF

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Publication number
KR970072513A
KR970072513A KR1019960014060A KR19960014060A KR970072513A KR 970072513 A KR970072513 A KR 970072513A KR 1019960014060 A KR1019960014060 A KR 1019960014060A KR 19960014060 A KR19960014060 A KR 19960014060A KR 970072513 A KR970072513 A KR 970072513A
Authority
KR
South Korea
Prior art keywords
electroluminescent device
thin insulating
light emitting
electron injection
insulating layer
Prior art date
Application number
KR1019960014060A
Other languages
English (en)
Inventor
김장주
Original Assignee
양승택
한국전자통신연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 양승택, 한국전자통신연구원 filed Critical 양승택
Priority to KR1019960014060A priority Critical patent/KR970072513A/ko
Priority to US08/840,280 priority patent/US5949089A/en
Publication of KR970072513A publication Critical patent/KR970072513A/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers

Abstract

본 발명은 전기발광소자에 관한 것으로, 종래에는 전기발생 고분자 소자에서 전자주입의 에너지 장벽이 정공 주입의 에너지 장벽보다 크기 때문에 발광층에 주입되는 전자와 정공의 균형이 맞지않아 발광효율이 떨어지는 단점이 있었고, 전자주입을 증대시키기 위해서 일함수가 작은 칼슘등을 사용하지만 이는 공기중에서 불안정하여 사용하기가 매우 어렵다. 본 발명은 이를 극복하기 위해 터널링 효과의 범위내의 두께를 가지는 얇은 절연막을 전극층과 발광층 사이중 어느 한측에 삽입 형성하여 터널링 효과에 의해 전자주입을 늘이고 정공주입을 줄여 발광층으로의 전자와 정공 주입 균형을 맞춤으로써, 발광효율을 향상시킨다.

Description

얇은 절연층을 삽입한 전기 발광소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 얇은 절연층을 삽입한 전기발광소자의 구조를 보인 단면도.

Claims (2)

  1. 유리기판 위에 하부 전극층을 형성하고, 그 위에 발광층 및 상부 전극층을 차례로 형성하되, 상기 하부전극층 또는 상부전극층과 발광층 사이중 어느 한쪽에만 터널링 범위내에 있는 두께의 얇은 절연막을 삽입 형성한 것을 특징으로 하는 얇은 절연층을 삽입한 전기발광 소자.
  2. 제1항에 있어서, 상기 절연막은 PMMA LB막으로서 다층으로 이루어진 것을 특징으로 하는 얇은 절연층을 삽입한 전기발광소자.
    ※참고사항: 최초출원 내용에 의하여 공개하는 것임.
KR1019960014060A 1996-04-30 1996-04-30 얇은 절연층을 삽입한 전기 발광소자 KR970072513A (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019960014060A KR970072513A (ko) 1996-04-30 1996-04-30 얇은 절연층을 삽입한 전기 발광소자
US08/840,280 US5949089A (en) 1996-04-30 1997-04-14 Organic light emitting diode having thin insulating layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960014060A KR970072513A (ko) 1996-04-30 1996-04-30 얇은 절연층을 삽입한 전기 발광소자

Publications (1)

Publication Number Publication Date
KR970072513A true KR970072513A (ko) 1997-11-07

Family

ID=19457471

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960014060A KR970072513A (ko) 1996-04-30 1996-04-30 얇은 절연층을 삽입한 전기 발광소자

Country Status (2)

Country Link
US (1) US5949089A (ko)
KR (1) KR970072513A (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1018857A1 (en) * 1998-07-24 2000-07-12 Seiko Epson Corporation Electroluminescent element
KR100759896B1 (ko) * 2006-06-15 2007-09-18 삼성전자주식회사 적어도 하나의 발광소자가 장착된 백라이트 모듈 및 그제작 방법
KR20150041314A (ko) * 2013-10-08 2015-04-16 엘지디스플레이 주식회사 유기전계 발광소자 및 그 제조방법

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4543446B2 (ja) * 1999-04-05 2010-09-15 Ｔｄｋ株式会社 有機ｅｌ素子
WO2001083067A2 (en) 2000-05-04 2001-11-08 Pearl Technology Holdings, Llc Inflatable organic light emitting diode toys
JP3895938B2 (ja) * 2001-03-22 2007-03-22 三洋電機株式会社 有機エレクトロルミネッセンス素子およびその製造方法
JP2002289360A (ja) * 2001-03-27 2002-10-04 Univ Toyama 有機電界発光素子
WO2007143197A2 (en) 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
WO2007113533A1 (en) * 2006-03-31 2007-10-11 British Telecommunications Public Limited Company Xml-based transfer and a local storage of java objects
WO2008063652A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2008063658A2 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063657A2 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Light emitting devices and displays with improved performance
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
WO2009123763A2 (en) 2008-04-03 2009-10-08 Qd Vision, Inc. Light-emitting device including quantum dots
CN105932129B (zh) * 2016-04-22 2018-11-02 河北工业大学 一种led的芯片结构及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69027697T2 (de) * 1989-03-31 1997-01-23 Toshiba Kawasaki Kk Organische elektrolumineszente Vorrichtung
NL8901069A (nl) * 1989-04-27 1990-11-16 Philips Nv Niet-lineair optische verbinding, niet-lineair optisch medium, werkwijze ter vervaardiging van een niet-lineair optisch medium en inrichting voor het verdubbelen van de frequentie van een lichtgolf.
DE4220135A1 (de) * 1992-06-15 1993-12-16 Bosch Gmbh Robert Verfahren zum Ankoppeln von Photoelementen an integriert-optische Schaltungen in Polymertechnologie
US5619058A (en) * 1994-02-17 1997-04-08 Lucent Technologies Inc. Light emitting diode device having four discrete regions

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1018857A1 (en) * 1998-07-24 2000-07-12 Seiko Epson Corporation Electroluminescent element
EP1018857A4 (en) * 1998-07-24 2004-12-29 Seiko Epson Corp ELECTROLUMINESCENT ELEMENT
US7026757B1 (en) 1998-07-24 2006-04-11 Seiko Epson Corporation Electroluminescent device having a thin-film layer, and electronic device having the electroluminescent device
KR100759896B1 (ko) * 2006-06-15 2007-09-18 삼성전자주식회사 적어도 하나의 발광소자가 장착된 백라이트 모듈 및 그제작 방법
KR20150041314A (ko) * 2013-10-08 2015-04-16 엘지디스플레이 주식회사 유기전계 발광소자 및 그 제조방법

Also Published As

Publication number Publication date
US5949089A (en) 1999-09-07

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