US5949089A - Organic light emitting diode having thin insulating layer - Google Patents
Organic light emitting diode having thin insulating layer Download PDFInfo
- Publication number
- US5949089A US5949089A US08/840,280 US84028097A US5949089A US 5949089 A US5949089 A US 5949089A US 84028097 A US84028097 A US 84028097A US 5949089 A US5949089 A US 5949089A
- Authority
- US
- United States
- Prior art keywords
- light emitting
- emitting diode
- insulating layer
- organic light
- emissive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002347 injection Methods 0.000 claims abstract description 14
- 239000007924 injection Substances 0.000 claims abstract description 14
- 230000005641 tunneling Effects 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- -1 poly(2-methoxy-5-(2'-ethylhexoxy)-1,4-phenylenevinylene) Polymers 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
Definitions
- the present invention relates to an organic light emitting diode having a thin insulating layer, and more particularly, to an organic light emitting diode having a thin insulating layer inserted between its organic emissive layer and the cathode, to thereby improve its light emission efficiency.
- FIG. 1 is a cross-sectional view showing the structure of a general organic light emitting diode.
- an anode 2 is formed on a glass substrate 1
- an emissive layer 3 is formed on anode 2.
- a predetermined pattern of cathode 4 is formed on the emissive layer 3.
- electrons are injected from cathode 4 to emissive layer 3, and holes are injected from anode 2 to emissive layer 3.
- the injected electrons and holes are recombined in emissive layer 3, to emit light. Balanced injection of the electrons and holes improves the light emission efficiency of the diode.
- anode 2 is formed of an indium-tin compound, and cathode 4 is formed of aluminum.
- the amount of holes injected is much more than that of electrons because the electron injection energy barrier is much higher than the hole injection energy barrier.
- the amount of electrons and holes are imbalanced in the emissive layer 3, thereby decreasing the light emission efficiency.
- a material having smaller work function like calcium is used for forming the electrodes in order to increase the injection of electrons.
- calcium is unstable in the air.
- the present invention is directed to an organic light emitting diode having a thin insulating layer that substantially obviates one or more of the disadvantages of the prior art.
- An object of the present invention is to provide an organic light emitting diode having a thin insulating layer, which is capable of improving the light emission efficiency.
- a thin insulating layer through which electrons can penetrate is inserted into the organic emissive layer and the cathode of the diode, so as to balance the injection of electrons and holes, thereby increasing its light emission efficiency.
- the insulating layer is formed of poly-methyl-methacrylate (PMMA) through Langmuir-Blodgett's technique, and its thickness is in a range where tunneling can occur.
- the injection of holes is decreased but the injection of electrons is increased due to the tunneling effect.
- balanced injection of electrons and holes are carried out in the emissive layer, resulting in improvement of the light emission efficiency of the diode.
- FIG. 1 is a cross-sectional view showing the structure of a conventional organic light emitting diode
- FIG. 2 is a cross-sectional view showing the structure of an organic light emitting diode having a thin insulating layer in accordance with the present invention.
- FIG. 3 is a characteristic diagram showing the light emission efficiency of an organic light emitting diode having a thin insulating layer in accordance with the present invention.
- FIG. 2 is a cross-sectional view showing the structure of an organic light emitting diode having a thin insulating layer in accordance with the present invention.
- a lower electrode 20 is formed as an indium-tin-oxide layer on a glass substrate 10.
- An emissive layer 30 is formed of polymer (poly(2-methoxy-5-(2'-ethylhexoxy)-1,4-phenylenevinylene); MEHPDV on the lower electrode 20.
- a thin insulating layer 40 is formed on emissive layer 30, and an upper electrode 50 is formed of aluminum on the insulating layer. Insulating layer 40 is formed of PMMA through Langmuir Blodgett's technique, and its thickness is in a range a tunneling effect can occur.
- the aforementioned organic light emitting diode of the present invention balanced injection of the electrons and holes is performed in emissive layer 30 due to the tunneling effect of the thin insulating layer 40. That is, if the thin insulating layer 40 is inserted between the emissive layer 30 and the upper electrode 50, the tunneling effect obstructs the injection of electrons not holes. This balances the injection of electrons and holes.
- Thin insulating layer 40 is formed in nm unit of multilevel PMMA layers through Langmuir Blodgett's technique. The insulating layer 40 thus formed is almost pinhole free. Accordingly, the thickness of the insulating layer can be accurately controlled in a nm range.
- FIG. 3 shows the relation of the light emission efficiency and operation voltage in the light emitting diode according to the present invention.
- the light emission efficiency varies with the number of layers of the PMMA. If an insulating layer having a thickness where the tunneling effect is maximized is inserted between the emissive layer and electrode, the light emission efficiency in the light emitting diode of the present invention is increased over four times, compared with the conventional light emitting diode having no insulating layer.
- the insulating layer self assembly layer or inorganic insulating material such as SiO 2 can be employed.
- the thin insulating layer is inserted between the emissive layer and electrode, so as to balance the injection of electrons and holes into the emissive layer due to the tunneling effect of the insulating layer.
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR96-14060 | 1996-04-30 | ||
KR1019960014060A KR970072513A (en) | 1996-04-30 | 1996-04-30 | An electroluminescent device having a thin insulating layer inserted therein |
Publications (1)
Publication Number | Publication Date |
---|---|
US5949089A true US5949089A (en) | 1999-09-07 |
Family
ID=19457471
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/840,280 Expired - Lifetime US5949089A (en) | 1996-04-30 | 1997-04-14 | Organic light emitting diode having thin insulating layer |
Country Status (2)
Country | Link |
---|---|
US (1) | US5949089A (en) |
KR (1) | KR970072513A (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6252246B1 (en) * | 1999-04-05 | 2001-06-26 | Tdk Corporation | Organic electroluminescent device |
WO2001083067A2 (en) | 2000-05-04 | 2001-11-08 | Pearl Technology Holdings, Llc | Inflatable organic light emitting diode toys |
EP1244154A2 (en) * | 2001-03-22 | 2002-09-25 | Sanyo Electric Co., Ltd. | Organic electroluminescence device and manufacturing method thereof |
US6570180B2 (en) * | 2001-03-27 | 2003-05-27 | President Of Toyama University | Organic light-emitting device capable of high-quality display |
EP1018857A4 (en) * | 1998-07-24 | 2004-12-29 | Seiko Epson Corp | Electroluminescent element |
US20090300093A1 (en) * | 2006-03-31 | 2009-12-03 | Tim Griffiths | Server computer |
US20100051901A1 (en) * | 2006-11-21 | 2010-03-04 | Kazlas Peter T | Light emitting devices and displays with improved performance |
US8691114B2 (en) | 2006-11-21 | 2014-04-08 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
US8906265B2 (en) | 2006-11-21 | 2014-12-09 | Qd Vision, Inc. | Blue emitting semiconductor nanocrystals and compositions and devices including same |
US9054329B2 (en) | 2006-06-02 | 2015-06-09 | Qd Vision, Inc. | Light-emitting devices and displays with improved performance |
CN105932129A (en) * | 2016-04-22 | 2016-09-07 | 河北工业大学 | LED chip structure and preparation method thereof |
US9525148B2 (en) | 2008-04-03 | 2016-12-20 | Qd Vision, Inc. | Device including quantum dots |
US10333090B2 (en) | 2008-04-03 | 2019-06-25 | Samsung Research America, Inc. | Light-emitting device including quantum dots |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100759896B1 (en) * | 2006-06-15 | 2007-09-18 | 삼성전자주식회사 | Backlight module stacked at least one luminescence element and fabrication thereof |
KR102049241B1 (en) * | 2013-10-08 | 2019-11-28 | 엘지디스플레이 주식회사 | Organic Electroluminescence Device and fabrication method thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5006729A (en) * | 1989-04-27 | 1991-04-09 | U.S. Philips Corporation | Device for doubling the frequency of a light wave comprising a non-linear optical compound |
US5294810A (en) * | 1989-03-31 | 1994-03-15 | Kabushiki Kaisha Toshiba | Organic electroluminescent device |
US5513288A (en) * | 1992-06-15 | 1996-04-30 | Robert Bosch Gmbh | Optical polymer element for coupling photoelements onto integrated-optical circuits |
US5619058A (en) * | 1994-02-17 | 1997-04-08 | Lucent Technologies Inc. | Light emitting diode device having four discrete regions |
-
1996
- 1996-04-30 KR KR1019960014060A patent/KR970072513A/en not_active Application Discontinuation
-
1997
- 1997-04-14 US US08/840,280 patent/US5949089A/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5294810A (en) * | 1989-03-31 | 1994-03-15 | Kabushiki Kaisha Toshiba | Organic electroluminescent device |
US5006729A (en) * | 1989-04-27 | 1991-04-09 | U.S. Philips Corporation | Device for doubling the frequency of a light wave comprising a non-linear optical compound |
US5513288A (en) * | 1992-06-15 | 1996-04-30 | Robert Bosch Gmbh | Optical polymer element for coupling photoelements onto integrated-optical circuits |
US5619058A (en) * | 1994-02-17 | 1997-04-08 | Lucent Technologies Inc. | Light emitting diode device having four discrete regions |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1018857A4 (en) * | 1998-07-24 | 2004-12-29 | Seiko Epson Corp | Electroluminescent element |
US7026757B1 (en) | 1998-07-24 | 2006-04-11 | Seiko Epson Corporation | Electroluminescent device having a thin-film layer, and electronic device having the electroluminescent device |
US6252246B1 (en) * | 1999-04-05 | 2001-06-26 | Tdk Corporation | Organic electroluminescent device |
WO2001083067A2 (en) | 2000-05-04 | 2001-11-08 | Pearl Technology Holdings, Llc | Inflatable organic light emitting diode toys |
EP1244154A2 (en) * | 2001-03-22 | 2002-09-25 | Sanyo Electric Co., Ltd. | Organic electroluminescence device and manufacturing method thereof |
US20020187366A1 (en) * | 2001-03-22 | 2002-12-12 | Yuji Hamada | Organic electroluminescence device and manufacturing method thereof |
EP1244154A3 (en) * | 2001-03-22 | 2005-02-09 | Sanyo Electric Co., Ltd. | Organic electroluminescence device and manufacturing method thereof |
US6570180B2 (en) * | 2001-03-27 | 2003-05-27 | President Of Toyama University | Organic light-emitting device capable of high-quality display |
US20090300093A1 (en) * | 2006-03-31 | 2009-12-03 | Tim Griffiths | Server computer |
US9054329B2 (en) | 2006-06-02 | 2015-06-09 | Qd Vision, Inc. | Light-emitting devices and displays with improved performance |
US9853184B2 (en) | 2006-06-02 | 2017-12-26 | Samsung Electronics Co., Ltd. | Light-emitting devices and displays with improved performance |
US10770619B2 (en) | 2006-06-02 | 2020-09-08 | Samsung Electronics Co., Ltd. | Light-emitting devices and displays with improved performance |
US10297713B2 (en) | 2006-06-02 | 2019-05-21 | Samsung Electronics Co., Ltd. | Light-emitting devices and displays with improved performance |
US8906265B2 (en) | 2006-11-21 | 2014-12-09 | Qd Vision, Inc. | Blue emitting semiconductor nanocrystals and compositions and devices including same |
US20100051901A1 (en) * | 2006-11-21 | 2010-03-04 | Kazlas Peter T | Light emitting devices and displays with improved performance |
US9444008B2 (en) | 2006-11-21 | 2016-09-13 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
US9534172B2 (en) | 2006-11-21 | 2017-01-03 | Qd Vision, Inc. | Blue emitting semiconductor nanocrystals and compositions and devices including same |
US8691114B2 (en) | 2006-11-21 | 2014-04-08 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
US10164205B2 (en) | 2008-04-03 | 2018-12-25 | Samsung Research America, Inc. | Device including quantum dots |
US9755172B2 (en) | 2008-04-03 | 2017-09-05 | Qd Vision, Inc. | Device including quantum dots |
US9525148B2 (en) | 2008-04-03 | 2016-12-20 | Qd Vision, Inc. | Device including quantum dots |
US10333090B2 (en) | 2008-04-03 | 2019-06-25 | Samsung Research America, Inc. | Light-emitting device including quantum dots |
US11005058B2 (en) | 2008-04-03 | 2021-05-11 | Samsung Research America, Inc. | Light-emitting device including quantum dots |
CN105932129A (en) * | 2016-04-22 | 2016-09-07 | 河北工业大学 | LED chip structure and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
KR970072513A (en) | 1997-11-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5949089A (en) | Organic light emitting diode having thin insulating layer | |
US5949186A (en) | Organic electroluminescent element | |
US6806491B2 (en) | Organic light-emitting devices | |
JP3249297B2 (en) | Organic electroluminescent device | |
Nguyen et al. | Improving the performance of conjugated polymer-based devices by control of interchain interactions and polymer film morphology | |
KR100478525B1 (en) | Light-Emitting Device and Display Device Employing Electroluminescence with no Light Leakage and Improved Light Extraction Efficiency | |
US7045953B2 (en) | Organic electroluminescence device with carrier transport multilayered body and organic electroluminescence display | |
US7733008B2 (en) | Organic light emitting diodes (OLEDs) including a barrier layer and method of manufacture | |
EP1444869B1 (en) | Organic light-emitting device having high luminescent efficiency | |
KR20040018503A (en) | Light emitting component with organic layers | |
US6628071B1 (en) | Package for organic electroluminescent device | |
US6690108B2 (en) | Organic electroluminescence element and manufacturing method therefor | |
US20070221910A1 (en) | Intermediate Layer in Electroluminescent Arrangements and Electroluminescent Arrrangement | |
TW431120B (en) | Organic electroluminescent device | |
JPH10214683A (en) | Organic electroluminescent element | |
US7368181B2 (en) | Organic electroluminescent elements including triazine derivative compounds | |
JPH08185983A (en) | Organic electroluminescent element | |
KR100364763B1 (en) | organic electroluminescence device | |
KR100924144B1 (en) | OLED and Method for fabricating the Same | |
JP2001185348A (en) | Photoelectric conversion element and its manufacturing method | |
KR100615171B1 (en) | Organic electro luminescence display device | |
US6259201B1 (en) | Structure of polymeric/organic electroluminescent device using ionomer as charge transport layer and method of making the same | |
US20060175959A1 (en) | Green enhancement filter to improve yield of white displays | |
KR100879474B1 (en) | Organic Electroluminescence device | |
KR100699966B1 (en) | Organic electroluminescence device and organic electroluminescence display |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTIT Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KIM, JANG-JOO;PARK, HEUK;REEL/FRAME:008741/0345 Effective date: 19970403 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY Free format text: PAYER NUMBER DE-ASSIGNED (ORIGINAL EVENT CODE: RMPN); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
AS | Assignment |
Owner name: IPG ELECTRONICS 502 LIMITED Free format text: ASSIGNMENT OF ONE HALF (1/2) OF ALL OF ASSIGNORS' RIGHT, TITLE AND INTEREST;ASSIGNOR:ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;REEL/FRAME:023456/0363 Effective date: 20081226 |
|
FPAY | Fee payment |
Year of fee payment: 12 |
|
AS | Assignment |
Owner name: PENDRAGON ELECTRONICS AND TELECOMMUNICATIONS RESEA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:IPG ELECTRONICS 502 LIMITED;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;SIGNING DATES FROM 20120410 TO 20120515;REEL/FRAME:028611/0643 |