ATE467253T1 - Hochleistungshalbleiterlaser mit gekoppeltem resonator - Google Patents

Hochleistungshalbleiterlaser mit gekoppeltem resonator

Info

Publication number
ATE467253T1
ATE467253T1 AT01934849T AT01934849T ATE467253T1 AT E467253 T1 ATE467253 T1 AT E467253T1 AT 01934849 T AT01934849 T AT 01934849T AT 01934849 T AT01934849 T AT 01934849T AT E467253 T1 ATE467253 T1 AT E467253T1
Authority
AT
Austria
Prior art keywords
mirror
active
gain region
substrate
high power
Prior art date
Application number
AT01934849T
Other languages
English (en)
Inventor
Aram Mooradian
Original Assignee
Necsel Intellectual Property I
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Necsel Intellectual Property I filed Critical Necsel Intellectual Property I
Application granted granted Critical
Publication of ATE467253T1 publication Critical patent/ATE467253T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AT01934849T 2000-03-06 2001-03-06 Hochleistungshalbleiterlaser mit gekoppeltem resonator ATE467253T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/519,890 US6778582B1 (en) 2000-03-06 2000-03-06 Coupled cavity high power semiconductor laser
PCT/US2001/007230 WO2001067563A2 (en) 2000-03-06 2001-03-06 Coupled cavity high power semiconductor laser

Publications (1)

Publication Number Publication Date
ATE467253T1 true ATE467253T1 (de) 2010-05-15

Family

ID=24070248

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01934849T ATE467253T1 (de) 2000-03-06 2001-03-06 Hochleistungshalbleiterlaser mit gekoppeltem resonator

Country Status (7)

Country Link
US (2) US6778582B1 (de)
EP (1) EP1264374B1 (de)
JP (2) JP4487085B2 (de)
AT (1) ATE467253T1 (de)
AU (1) AU2001260997A1 (de)
DE (1) DE60142029D1 (de)
WO (1) WO2001067563A2 (de)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727520B2 (en) * 2000-12-29 2004-04-27 Honeywell International Inc. Spatially modulated reflector for an optoelectronic device
KR100374796B1 (ko) * 2001-02-02 2003-03-03 삼성전기주식회사 Ｐ형 전극과 활성층 사이에 효과적인 정공 확산을 위한 스페이서를 구비하는 ＧａＮ 면 발광 레이저 다이오드 및그 제조 방법
FR2828960B1 (fr) * 2001-08-23 2004-03-12 Teem Photonics Source laser en optique guidee
AT411298B (de) * 2001-09-18 2003-11-25 Gerhard Mag Totschnig Verfahren zur laser-absorptionsspektroskopie und einrichtungen zur durchführung dieses verfahrens
FR2835065B1 (fr) * 2002-01-22 2004-04-02 Centre Nat Rech Scient Composant a absorbant saturable et procede de fabrication de composant a absorbant saturable
US6646777B2 (en) 2002-02-27 2003-11-11 Jds Uniphase Corporation Optical isolator with improved mounting characteristics
US6773532B2 (en) 2002-02-27 2004-08-10 Jds Uniphase Corporation Method for improving heat dissipation in optical transmitter
TW595059B (en) * 2002-05-03 2004-06-21 Osram Opto Semiconductors Gmbh Optically pumped semiconductor laser device
US7197059B2 (en) * 2002-05-08 2007-03-27 Melles Griot, Inc. Short wavelength diode-pumped solid-state laser
DE10223540B4 (de) * 2002-05-27 2006-12-21 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiterlaservorrichtung
AU2002952347A0 (en) * 2002-10-30 2002-11-14 Edith Cowan University Optical amplifier
GB0328007D0 (en) * 2003-12-04 2004-01-07 Univ Strathclyde Improved vertical external cavity surface emitting laser
DE102004040077A1 (de) * 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Oberflächenemittierendes Halbleiterlaserbauelement mit einer vertikalen Emissionsrichtung
KR101015499B1 (ko) * 2004-06-19 2011-02-16 삼성전자주식회사 복수의 파장을 발생시키는 반도체 레이저 소자 및 상기반도체 레이저 소자용 레이저 펌핑부
EP1771768A4 (de) * 2004-07-30 2009-12-02 Novalux Inc Vorrichtung, system, und verfahren zur wellenlängenumsetzung von modengekoppelten erweiterten oberflächenemissions-halbleiterlaser
US7322704B2 (en) * 2004-07-30 2008-01-29 Novalux, Inc. Frequency stabilized vertical extended cavity surface emitting lasers
KR20070046831A (ko) * 2004-07-30 2007-05-03 노바룩스 인코포레이티드 투사 디스플레이 장치, 시스템 및 방법
US8053794B2 (en) * 2004-08-26 2011-11-08 Lg Innotek Co., Ltd Nitride semiconductor light emitting device and fabrication method thereof
DE102005036820A1 (de) * 2004-08-31 2006-03-09 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper für einen vertikal emittierenden Laser und Verfahren zu dessen Herstellung
CA2592055A1 (en) 2004-12-27 2006-07-06 Quantum Paper, Inc. Addressable and printable emissive display
WO2006087650A2 (en) * 2005-02-17 2006-08-24 Philips Intellectual Property & Standards Gmbh All-solid-state uv laser system
KR20080003386A (ko) 2005-03-30 2008-01-07 노바룩스 인코포레이티드 주파수 안정화된 수직 연장 공동 표면 발광 레이저
EP1869526B1 (de) 2005-03-30 2019-11-06 Necsel Intellectual Property, Inc. Herstellbare oberflächenemissions-laserarrays mit vertikalem erweitertem resonator
KR101100424B1 (ko) * 2005-05-04 2011-12-30 삼성전자주식회사 펌프 레이저가 일체로 결합된 수직 외부 공진기형 면발광레이저
US20070147458A1 (en) * 2005-06-10 2007-06-28 Novalux, Inc. Cavity and packaging designs for arrays of vertical cavity surface emitting lasers with or without extended cavities
JP4495052B2 (ja) * 2005-08-26 2010-06-30 古河電気工業株式会社 面発光レーザ素子、光送信モジュール、光コネクタおよび光通信システム
DE102006010728A1 (de) * 2005-12-05 2007-06-06 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Laservorrichtung
DE102006010727B4 (de) 2005-12-05 2019-10-24 Osram Opto Semiconductors Gmbh Oberflächenemittierendes Halbleiterbauelement mit einem Tunnelübergang
WO2007125452A2 (en) * 2006-04-27 2007-11-08 Philips Intellectual Property & Standards Gmbh Intracavity upconversion laser
US7801197B2 (en) * 2006-06-16 2010-09-21 Epicrystals Oy High power laser device
US7733927B2 (en) * 2006-06-22 2010-06-08 Panasonic Corporation Laser light source device and image display device
CN101529673A (zh) * 2006-10-24 2009-09-09 皇家飞利浦电子股份有限公司 用于可见波长区域的腔内变频固态激光器
US9018833B2 (en) 2007-05-31 2015-04-28 Nthdegree Technologies Worldwide Inc Apparatus with light emitting or absorbing diodes
US9419179B2 (en) 2007-05-31 2016-08-16 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8889216B2 (en) 2007-05-31 2014-11-18 Nthdegree Technologies Worldwide Inc Method of manufacturing addressable and static electronic displays
US9425357B2 (en) 2007-05-31 2016-08-23 Nthdegree Technologies Worldwide Inc. Diode for a printable composition
US8846457B2 (en) 2007-05-31 2014-09-30 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8415879B2 (en) 2007-05-31 2013-04-09 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8852467B2 (en) 2007-05-31 2014-10-07 Nthdegree Technologies Worldwide Inc Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US8133768B2 (en) 2007-05-31 2012-03-13 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US9343593B2 (en) 2007-05-31 2016-05-17 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8384630B2 (en) 2007-05-31 2013-02-26 Nthdegree Technologies Worldwide Inc Light emitting, photovoltaic or other electronic apparatus and system
US9534772B2 (en) 2007-05-31 2017-01-03 Nthdegree Technologies Worldwide Inc Apparatus with light emitting diodes
US8877101B2 (en) 2007-05-31 2014-11-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, power generating or other electronic apparatus
US8809126B2 (en) 2007-05-31 2014-08-19 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8674593B2 (en) 2007-05-31 2014-03-18 Nthdegree Technologies Worldwide Inc Diode for a printable composition
TWI338983B (en) * 2007-07-20 2011-03-11 Young Optics Inc Laser light source module
US20090141749A1 (en) * 2007-12-03 2009-06-04 Young Optics Inc. Laser module
US7630125B2 (en) * 2007-12-11 2009-12-08 Young Optics Inc. Laser module
US7801195B2 (en) * 2008-02-14 2010-09-21 Koninklijke Philips Electronics N.V. Electrically-pumped semiconductor zigzag extended cavity surface emitting lasers and superluminescent LEDs
US8127477B2 (en) 2008-05-13 2012-03-06 Nthdegree Technologies Worldwide Inc Illuminating display systems
US7992332B2 (en) 2008-05-13 2011-08-09 Nthdegree Technologies Worldwide Inc. Apparatuses for providing power for illumination of a display object
WO2009153689A1 (en) * 2008-06-19 2009-12-23 Philips Intellectual Property & Standards Gmbh Apparatus for determining a relative velocity
DE102008030818B4 (de) * 2008-06-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenemittierender Halbleiterlaser mit mehreren aktiven Zonen
JP5744749B2 (ja) * 2008-12-10 2015-07-08 コーニンクレッカ フィリップス エヌ ヴェ 改善された空間モードを備えるハイパワーｖｃｓｅｌ
DE102008061335B4 (de) * 2008-12-11 2021-09-23 Toptica Photonics Ag Sättigbarer Absorberspiegel und Verfahren zur Anpassung eines sättigbaren Absorberspiegels an eine vorgegebene Arbeitswellenlänge
JP2010258198A (ja) * 2009-04-24 2010-11-11 Fujifilm Corp モード同期固体レーザ装置
US20110044359A1 (en) * 2009-08-18 2011-02-24 Douglas Llewellyn Butler Intracavity Conversion Utilizing Narrow Band Reflective SOA
US9053731B2 (en) 2010-07-09 2015-06-09 HGST Netherlands B.V. Extended cavity VCSEL mounted to substrate with electrical and thermal contact to substrate and optical power directed toward substrate
US8194512B2 (en) * 2010-11-08 2012-06-05 Hitachi Global Storage Technologies Netherlands B.V. Head structure for thermally-assisted recording (TAR) disk drive
US8107326B1 (en) 2010-11-15 2012-01-31 Hitachi Global Storage Technologies Netherlands B.V. Slider with integrated thermally-assisted recording (TAR) head and integrated long laser diode
US8184507B1 (en) 2010-12-15 2012-05-22 Hitachi Global Storage Technologies Netherlands B.V. Slider with integrated thermally-assisted recording (TAR) head and long laser diode with optical body for directing laser radiation
US8139448B1 (en) 2010-12-15 2012-03-20 Hitachi Global Storage Technologies Netherlands B.V. Slider with integrated thermally-assisted recording (TAR) head and vertical-cavity surface-emitting laser (VCSEL) with angled external cavity
RU2482582C2 (ru) * 2011-06-10 2013-05-20 Валентин Иванович Виноградов Способ уменьшения области существования генерации лазеров
US9112331B2 (en) * 2012-03-22 2015-08-18 Palo Alto Research Center Incorporated Surface emitting laser incorporating third reflector
US9124062B2 (en) 2012-03-22 2015-09-01 Palo Alto Research Center Incorporated Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector
US20150188078A1 (en) * 2012-06-14 2015-07-02 Konica Minolta, Inc. Electroluminescent Element and Lighting Apparatus Comprising the Same
US9129634B1 (en) 2014-06-17 2015-09-08 HGST Netherlands B.V. Integrated compound DBR laser for HAMR applications
EP3035456B1 (de) * 2014-12-15 2018-02-28 Université Montpellier 2 Sciences et Techniques Laservorrichtung mit gesteuertem orbitalem Drehimpuls
JP2017059661A (ja) 2015-09-16 2017-03-23 ウシオ電機株式会社 外部共振器型レーザ装置
WO2019017044A1 (ja) * 2017-07-18 2019-01-24 ソニー株式会社 発光素子及び発光素子アレイ
US11133652B2 (en) * 2019-04-30 2021-09-28 Aurelien David Optical devices and methods of manufacture and operation
CN116600465B (zh) * 2023-05-19 2026-02-06 中国科学院上海高等研究院 提升加速器相干光源重复频率的装置及方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246548A (en) 1974-08-14 1981-01-20 International Business Machines Corporation Coherent semiconductor injection laser array
US4488307A (en) * 1982-06-07 1984-12-11 The United States Of America As Represented By The Secretary Of The Navy Three-mirror active-passive semiconductor laser
US5131002A (en) 1991-02-12 1992-07-14 Massachusetts Institute Of Technology External cavity semiconductor laser system
JP2805400B2 (ja) * 1991-06-14 1998-09-30 富士写真フイルム株式会社 光波長変換装置
JP2546133B2 (ja) 1993-04-30 1996-10-23 日本電気株式会社 狭帯域化面発光レーザ
JP3403832B2 (ja) 1994-09-06 2003-05-06 株式会社リコー 発光素子
EP0852834B1 (de) * 1995-09-29 1999-03-31 BRITISH TELECOMMUNICATIONS public limited company Optische resonanzstruktur
US5724376A (en) * 1995-11-30 1998-03-03 Hewlett-Packard Company Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding
US6243407B1 (en) 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
US6347104B1 (en) * 1999-02-04 2002-02-12 Genoa Corporation Optical signal power monitor and regulator

Also Published As

Publication number Publication date
WO2001067563A2 (en) 2001-09-13
WO2001067563A3 (en) 2002-04-25
US20050002433A1 (en) 2005-01-06
DE60142029D1 (de) 2010-06-17
AU2001260997A1 (en) 2001-09-17
JP2007235163A (ja) 2007-09-13
WO2001067563A9 (en) 2003-01-03
EP1264374B1 (de) 2010-05-05
EP1264374A2 (de) 2002-12-11
JP4487085B2 (ja) 2010-06-23
US6898225B2 (en) 2005-05-24
JP2003526930A (ja) 2003-09-09
US6778582B1 (en) 2004-08-17

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