AU2001260997A1 - Coupled cavity high power semiconductor laser - Google Patents
Coupled cavity high power semiconductor laserInfo
- Publication number
- AU2001260997A1 AU2001260997A1 AU2001260997A AU6099701A AU2001260997A1 AU 2001260997 A1 AU2001260997 A1 AU 2001260997A1 AU 2001260997 A AU2001260997 A AU 2001260997A AU 6099701 A AU6099701 A AU 6099701A AU 2001260997 A1 AU2001260997 A1 AU 2001260997A1
- Authority
- AU
- Australia
- Prior art keywords
- mirror
- active
- gain region
- substrate
- high power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1021—Coupled cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Abstract
An active gain region sandwiched between a 100% reflective bottom Bragg mirror and an intermediate partially reflecting Bragg mirror is formed on a lower surface of a supporting substrate, to thereby provide the first ("active") resonator cavity of a high power coupled cavity surface emitting laser device. The bottom mirror is preferably in direct thermal contact with an external heat sink for maximum heat removal effectiveness. The reflectivity of the intermediate mirror is kept low enough so that laser oscillation within the active gain region will not occur. The substrate is entirely outside the active cavity but is contained within a second ("passive") resonator cavity defined by the intermediate mirror and a partially reflecting output mirror, where it is subjected to only a fraction of the light intensity that is circulating in the gain region. The active gain region is preferably electrically excited, with a circular bottom electrode formed by an oxide current aperture between the bottom mirror and the heat sink, and with an annular top electrode formed on an upper surface of the substrate.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/519,890 | 2000-03-06 | ||
US09/519,890 US6778582B1 (en) | 2000-03-06 | 2000-03-06 | Coupled cavity high power semiconductor laser |
PCT/US2001/007230 WO2001067563A2 (en) | 2000-03-06 | 2001-03-06 | Coupled cavity high power semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001260997A1 true AU2001260997A1 (en) | 2001-09-17 |
Family
ID=24070248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001260997A Abandoned AU2001260997A1 (en) | 2000-03-06 | 2001-03-06 | Coupled cavity high power semiconductor laser |
Country Status (7)
Country | Link |
---|---|
US (2) | US6778582B1 (en) |
EP (1) | EP1264374B1 (en) |
JP (2) | JP4487085B2 (en) |
AT (1) | ATE467253T1 (en) |
AU (1) | AU2001260997A1 (en) |
DE (1) | DE60142029D1 (en) |
WO (1) | WO2001067563A2 (en) |
Families Citing this family (72)
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US6727520B2 (en) * | 2000-12-29 | 2004-04-27 | Honeywell International Inc. | Spatially modulated reflector for an optoelectronic device |
KR100374796B1 (en) * | 2001-02-02 | 2003-03-03 | 삼성전기주식회사 | GaN surface emitting LD comprising spacer for effectively diffusing holes between p type electrode and active layer and method for manufacturing the same |
FR2828960B1 (en) * | 2001-08-23 | 2004-03-12 | Teem Photonics | LASER SOURCE IN GUIDED OPTICS |
AT411298B (en) * | 2001-09-18 | 2003-11-25 | Gerhard Mag Totschnig | METHOD FOR LASER ABSORPTION SPECTROSCOPY AND DEVICES FOR CARRYING OUT THIS METHOD |
FR2835065B1 (en) * | 2002-01-22 | 2004-04-02 | Centre Nat Rech Scient | SATURABLE ABSORBENT COMPONENT AND METHOD FOR MANUFACTURING SATURABLE ABSORBENT COMPONENT |
US6646777B2 (en) | 2002-02-27 | 2003-11-11 | Jds Uniphase Corporation | Optical isolator with improved mounting characteristics |
US6773532B2 (en) | 2002-02-27 | 2004-08-10 | Jds Uniphase Corporation | Method for improving heat dissipation in optical transmitter |
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US7197059B2 (en) * | 2002-05-08 | 2007-03-27 | Melles Griot, Inc. | Short wavelength diode-pumped solid-state laser |
DE10223540B4 (en) * | 2002-05-27 | 2006-12-21 | Osram Opto Semiconductors Gmbh | Optically pumped semiconductor laser device |
AU2002952347A0 (en) * | 2002-10-30 | 2002-11-14 | Edith Cowan University | Optical amplifier |
GB0328007D0 (en) * | 2003-12-04 | 2004-01-07 | Univ Strathclyde | Improved vertical external cavity surface emitting laser |
DE102004040077A1 (en) * | 2004-05-28 | 2005-12-22 | Osram Opto Semiconductors Gmbh | Surface emitting semiconductor laser device having a vertical emission direction |
KR101015499B1 (en) * | 2004-06-19 | 2011-02-16 | 삼성전자주식회사 | Laser device emitting a plurality of wavelength and a laser pumping unit for the same |
WO2006015193A2 (en) * | 2004-07-30 | 2006-02-09 | Novalux, Inc. | Apparatus, system, and method for wavelength conversion of mode-locked extended cavity surface emitting semiconductor lasers |
KR20070046831A (en) * | 2004-07-30 | 2007-05-03 | 노바룩스 인코포레이티드 | Projection display apparatus, system, and method |
US7322704B2 (en) * | 2004-07-30 | 2008-01-29 | Novalux, Inc. | Frequency stabilized vertical extended cavity surface emitting lasers |
EP1794813B1 (en) * | 2004-08-26 | 2015-05-20 | LG Innotek Co., Ltd. | Nitride semiconductor light emitting device and fabrication method thereof |
DE102005036820A1 (en) * | 2004-08-31 | 2006-03-09 | Osram Opto Semiconductors Gmbh | Solid state vertical laser has current blocking and transmitting regions formed in layered structure |
BRPI0519478A2 (en) | 2004-12-27 | 2009-02-03 | Quantum Paper Inc | addressable and printable emissive display |
US20080159339A1 (en) * | 2005-02-17 | 2008-07-03 | Koninklijke Philips Electronics, N.V. | All-Solid State Uv Laser System |
EP1869526B1 (en) | 2005-03-30 | 2019-11-06 | Necsel Intellectual Property, Inc. | Manufacturable vertical extended cavity surface emitting laser arrays |
JP2008535263A (en) * | 2005-03-30 | 2008-08-28 | ノバラックス,インコーポレイティド | Vertically stabilized cavity surface emitting laser with frequency stabilization |
KR101100424B1 (en) * | 2005-05-04 | 2011-12-30 | 삼성전자주식회사 | Pump laser integrated vertical external cavity surface emitting laser |
US20070147458A1 (en) * | 2005-06-10 | 2007-06-28 | Novalux, Inc. | Cavity and packaging designs for arrays of vertical cavity surface emitting lasers with or without extended cavities |
JP4495052B2 (en) * | 2005-08-26 | 2010-06-30 | 古河電気工業株式会社 | Surface emitting laser element, optical transmission module, optical connector, and optical communication system |
DE102006010728A1 (en) * | 2005-12-05 | 2007-06-06 | Osram Opto Semiconductors Gmbh | Semiconductor component and laser device |
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JP2017059661A (en) | 2015-09-16 | 2017-03-23 | ウシオ電機株式会社 | External resonator laser device |
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US4246548A (en) | 1974-08-14 | 1981-01-20 | International Business Machines Corporation | Coherent semiconductor injection laser array |
US4488307A (en) * | 1982-06-07 | 1984-12-11 | The United States Of America As Represented By The Secretary Of The Navy | Three-mirror active-passive semiconductor laser |
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JP2805400B2 (en) * | 1991-06-14 | 1998-09-30 | 富士写真フイルム株式会社 | Optical wavelength converter |
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JP3403832B2 (en) | 1994-09-06 | 2003-05-06 | 株式会社リコー | Light emitting element |
DE69601948T2 (en) * | 1995-09-29 | 1999-08-05 | British Telecomm | OPTICAL RESONANCE STRUCTURE |
US5724376A (en) * | 1995-11-30 | 1998-03-03 | Hewlett-Packard Company | Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding |
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US6347104B1 (en) * | 1999-02-04 | 2002-02-12 | Genoa Corporation | Optical signal power monitor and regulator |
-
2000
- 2000-03-06 US US09/519,890 patent/US6778582B1/en not_active Expired - Lifetime
-
2001
- 2001-03-06 AT AT01934849T patent/ATE467253T1/en not_active IP Right Cessation
- 2001-03-06 JP JP2001566229A patent/JP4487085B2/en not_active Expired - Lifetime
- 2001-03-06 WO PCT/US2001/007230 patent/WO2001067563A2/en active Application Filing
- 2001-03-06 DE DE60142029T patent/DE60142029D1/en not_active Expired - Lifetime
- 2001-03-06 AU AU2001260997A patent/AU2001260997A1/en not_active Abandoned
- 2001-03-06 EP EP01934849A patent/EP1264374B1/en not_active Expired - Lifetime
-
2004
- 2004-07-26 US US10/899,779 patent/US6898225B2/en not_active Expired - Lifetime
-
2007
- 2007-05-01 JP JP2007121200A patent/JP2007235163A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2001067563A3 (en) | 2002-04-25 |
JP4487085B2 (en) | 2010-06-23 |
JP2007235163A (en) | 2007-09-13 |
ATE467253T1 (en) | 2010-05-15 |
US20050002433A1 (en) | 2005-01-06 |
WO2001067563A9 (en) | 2003-01-03 |
US6898225B2 (en) | 2005-05-24 |
DE60142029D1 (en) | 2010-06-17 |
WO2001067563A2 (en) | 2001-09-13 |
EP1264374A2 (en) | 2002-12-11 |
EP1264374B1 (en) | 2010-05-05 |
JP2003526930A (en) | 2003-09-09 |
US6778582B1 (en) | 2004-08-17 |
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