CN1159808C - 垂直腔表面发射激光器 - Google Patents

垂直腔表面发射激光器 Download PDF

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CN1159808C
CN1159808C CNB961031743A CN96103174A CN1159808C CN 1159808 C CN1159808 C CN 1159808C CN B961031743 A CNB961031743 A CN B961031743A CN 96103174 A CN96103174 A CN 96103174A CN 1159808 C CN1159808 C CN 1159808C
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vcsel
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active layer
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CN1137188A (zh
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李用熙
申铉国
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18327—Structure being part of a DBR
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

提供了一种垂直腔表面发射激光器(VCSEL)，它具有基片、由含杂质的半导体材料形成的第一反射层、第一反射层之上的活性层、活性层之上由含有与用于第一反射层的半导体材料所含杂质的类型相反的杂质的半导体材料所形成的第二反射层、以及第二反射层之上具有发射来自第二反射层的光的腔的电极层。电极层具有导电性高并与外部电源相连的金属层和金属层之下并具有低于两个反射层反射率的导电性辅助反射层。

Description

垂直腔表面发射激光器
技术领域
本发明涉及一种垂直腔表面发射激光器(VCSEL)，并特别涉及一种其中为了增强发射光的光学特性而改进了电极层的VCSEL。
技术背景
通常来说，VCSEL从淀积的半导体材料层垂直地发射出近乎圆形的高斯光束，从而避免了对校正发射光形状(configuration)的光学系统的需求，这一点并不象边缘发射激光器。另外，由于VCSEL可以小型化，所以可将多个VCSEL集成于单独一个半导体片上。因此，易得到VCSEL的二维结构。这些优点使VCSEL对例如电子计算机、音频/视频设备、激光打印机和扫描仪、医疗设备和通信领域这样的光学应用具有吸引力。
图1说明了由基片10和在基片10上顺序淀积而成的第一反射层12、活性层14、第二反射层16和电极层20所组成的传统的VCSEL。此外，基片10掺有含n型杂质的半导体材料，例如，n型GaAs。通过在基片10上轮流淀积含有与基片所含的杂质相同类型的杂质的半导体材料，如n型AlxGa1-xAs和n型AlAs，来形成第一反射层12。第一反射层12具有约99.9％的反射率并能使活性层14中产生的特定波长范围内的光透过。第二反射层16由用于第一反射层但含有与第一反射层所含杂质类型相反的杂质的半导体材料组成。即，通过在活性层14上轮流淀积P型AlxGa1-xAs和P型AlAs来形成第二反射层16。第二反射层16具有大约99.6％的反射率以发射产生于活性层14中的光。另外，通过对都与一外部电源相连的基片10和电极层20施加电压使得第一和第二反射层12和16向活性层14移动电子和空穴。活性层14通过电子和空穴的重聚所产生的能量迁移来产生光。活性层14可具有单量子阱结构、多量子阱结构或超点阵结构，并可由单一的半导体材料或非导电材料形成。
电极层20由用于发射已透过了第二反射层16的光线的腔22来形成。电极层20由用于和外部电源电气相连并具有高导电性的金属形成。当分别对电极层20和基片10施加电能时，电流便在VCSEL中流动。
通过在第二反射层16中放入离子或质子形成了远离腔22底面的高电阻部分18。高电阻部分18限制了VCSEL中的电流的流动以提高在活性层14中产生并通过腔22得以发射的激光的输出量。
不过，一部分通过高电阻部分18之外区域的光向在腔22内部延伸的电极层20的突出部分21移动。这里，由于电极层20由具有高电导性的金属，如金或铜形成，因此入射至此金属层的大部分光从那里反射并传向第二反射层16。传向第二反射层16的光影响由腔22发射出的光。这样，就影响了所产生激光的单一模式和强度。
发明内容
为了克服以上问题，本发明的目的是提供一种VCSEL，其中改善了电极层结构以获得发射光的均匀强度。
为了完成上述目标，提供了一种VCSEL，它包含基片、基片之上由含杂质的半导体材料形成的第一反射层、第一反射层之上用以产生激光束的活性层、活性层之上由具有与第一反射层的半导体材料所含杂质的类型相反的杂质的半导体材料形成的第二反射层、以及形成于第二反射层上并具有用于发射来自第二反射层的光的空腔的电极层。电极层具有导电性高并与外部电源相连的金属层和形成于金属层下面且反射率低于第一和第二反射层的导电性辅助反射层。
附图说明
通过参照附图详细描述本发明的一个优选实施例，本发明的上述目的和优点将变得明显，在附图中：
图1为传统VCSEL的简略剖视图；以及
图2为根据本发明的VCSEL的简略剖视图。
具体实施方式
如图2所示，本发明的VCSEL由基片30和全部在基片30上顺序形成的第一反射层32、活性层34、第二反射层36和电极层40组成。
基片30掺有含n型杂质的半导体材料，如n型GaAs，并与外部电源相连。通过在基片30上轮流淀积含有与基片30所含杂质类型相同的杂质的半导体材料，如n型AlxGa1-xAs和n型AlAs来形成第一反射层32。第一反射层32具有约99-9％的高反射率并能使产生于活性层32的特定波长范围内的光透过。第二反射层36由用于第一反射层32但含与第一反射层32所含杂质类型相反的杂质的半导体材料形成。即，通过在活性层34上轮流淀积P型AlxGa1-xAs和P型AlAs来形成第二反射层36。第二反射层36具有约99.6％的反射率以发射产生于活性层34的激光。另外，通过对都与外部电源相连的基片30和电极层40施加电压，第一和第二反射层32和36将电子和空穴引导至活性层34。活性层34通过电子和空穴重聚所产生的能量迁移产生光。活性层34可具有单量子阱结构、多量子阱结构或超点阵结构。
电极层40由用于发射从第二反射层36透过的光的腔46来形成。
电极层40是含金属层44和导电性辅助反射层42的双层。金属层44与外部电源相连并最好由具有高电导性的金属，如金或银形成。
金属层44和第二反射层36之间的辅助反射层42由镍、钼、铂或铬形成。辅助反射层42的反射率大约为98-99％，低于第一和第二反射层32和36的反射率。因此，从辅助反射层42的突出部分43的底面反射的光强度小于从腔46反射的光强度。这样，辅助反射层42抑制了通过腔46高级别(high-degree)模式光的发射并从而用以发射单模式的低噪声光。
另外，通过在第二反射层36放入离子或质子，还可以在第二反射层36中提供远离腔46底面的高电阻部分38。高电阻部分38限制电流流动，从而提高了产生于活性层34并由腔46激发出的光的强度。
因此，由于本发明的VCSEL抑制了高级别模式光的发射，所以改善了从腔发射的光的光学性质从而使光保持了基本的单模式。

Claims (3)

1.一种垂直腔表面发射激光器，包括：
一个基片；
第一反射层，在所述基片上由包含杂质的半导体材料形成；
活性层，在所述第一反射层上形成并用于产生激光束；
第二反射层，在所述活性层上由含有与用于第一反射层的半导体材料所含杂质类型相反类型的杂质的半导体材料所形成；以及
电极层，形成于所述第二反射层上并具有用于发射来自所述第二反射层的光的腔，其特征在于，
所述电极层包括一个金属层和一个导电性辅助反射层，该金属层具有高导电性，与外部电源相连，并且是沿光从第二反射层出射的那个方向形成的；该导电性辅助反射层形成于所述金属层的下面并且具有的反射率低于所述第一反射层、第二反射层、所述金属层的反射率。
2.根据权利要求1的垂直腔表面发射激光器，其特征在于，所述辅助反射层的反射率为98-99％。
3.根据权利要求1的垂直腔表面发射激光器，其特征在于，通过在所述第二反射层上放入离子或质子，在所述第二反射层中形成与所述腔分离开的高电阻部分，从而提高通过所述腔发射的光的强度。
CNB961031743A 1995-03-23 1996-03-22 垂直腔表面发射激光器 Expired - Fee Related CN1159808C (zh)

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CN1137188A (zh) 1996-12-04
KR0160684B1 (ko) 1999-02-01
GB2299207B (en) 1999-05-12
GB2299207A (en) 1996-09-25
JP3288573B2 (ja) 2002-06-04
JPH08274408A (ja) 1996-10-18
GB9605931D0 (en) 1996-05-22
US5753941A (en) 1998-05-19
KR960036225A (ko) 1996-10-28
DE19611393B4 (de) 2005-07-28

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