KR960019813A - 양방향성 비전도 광 데이타 전송을 위한 반도체 장치 - Google Patents

양방향성 비전도 광 데이타 전송을 위한 반도체 장치 Download PDF

Info

Publication number
KR960019813A
KR960019813A KR1019950040415A KR19950040415A KR960019813A KR 960019813 A KR960019813 A KR 960019813A KR 1019950040415 A KR1019950040415 A KR 1019950040415A KR 19950040415 A KR19950040415 A KR 19950040415A KR 960019813 A KR960019813 A KR 960019813A
Authority
KR
South Korea
Prior art keywords
semiconductor device
chip
integrated circuit
lead frame
receiver chip
Prior art date
Application number
KR1019950040415A
Other languages
English (en)
Inventor
크리거 랄프-요헨
Original Assignee
한스-울리히 슈타이거·한스-위르겐 마우테
테믹 텔레풍켄 마이크로엘렉트로닉 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한스-울리히 슈타이거·한스-위르겐 마우테, 테믹 텔레풍켄 마이크로엘렉트로닉 게엠베하 filed Critical 한스-울리히 슈타이거·한스-위르겐 마우테
Publication of KR960019813A publication Critical patent/KR960019813A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

Abstract

적외선 대역내로부터 전자기파의 수단에 의해 양방향 비전도 광 데이타 전송을 위한 반도체 장치는 기술된다. 반도체 장치는 수신기 칩의 광 전기 전류를 증폭하기 위한 집적 회로 뿐 아니라, IR 대역내에서 방사선을 방출하는 전송 칩, 광 전기 전류를 방사하여 IR 대역내의 방사에 응답하는 수신기 칩을 포함한다. 이들 3개의 반도체 칩은 적어도 3개의 리드를 포함하는 리드 프레임에 설치된다. 리드 프레임의 납작한 측면상에서, 집적 회로는 리드 프레임의 길이 방향에 평행인 제1레벨상에 배치된다. 리드의 단부면상에서, 전송 칩 및 수신기 칩은 제1레벨에 수직 방향으로 향한 제2레벨상에 배치된다. 서로 수직인 두 개의 레벨상에 소자를 설치함으로써, 어셈블리는 매우 작게 설계되는 외장 크기를 허용한다. 광학적으로 적당한 소자는 단부면에 배치되는 반면 직접 회로는 광학적으로 보호된 측면 위치에 배치된다. 작은 구조 때문에 반도체 소자는 개인용 컴퓨터에서 IR통신을 적용하기 위하여 제공하기 위한 PCMCIA상에 부분적으로 사용하기에 적당하다.

Description

양방향성 비전도 광 데이타 전송을 위한 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 반도체 어셈블리 투시도,
제2도는 반도체 어셈블리 측면도,
제3도는 반도체 어셈블리 평면도.

Claims (5)

  1. -광전자 전류(IPH)를 방사함으로써 IR대역에서 방사에 응답하는 수신기 칩, -수신기 칩의 광전자 전류(IPH)를 증폭하기 의한 집적 회로, -집적 회로뿐 아니라 수신기 칩이 설치되는 적어도 3개 이상의 리드로 구성된 리드 프레임을 포함하는 반도체 장치에 있어서, -반도체 장치는 IR 대역내에서 방사선을 방출하는 전송 칩을 포함하고, -집적 회로는 리드 프레임의 길이 방향과 평행인 제1레벨상에 배치되고, -수신기 칩뿐 아니라 전송 칩은 각각의 리드 프레임 단에서 제1레벨에 수직인 제2레벨상에 배치되는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 제1리드는 하나의 상부 단상에 주조된 반사기를 가지며, 반사기내에 전송 칩이 설치되는 것을 특징으로 하는 반도체 장치.
  3. 제2항에 있어서, -제2리드는 한쪽 단부에서 각을 이룬 부분을 포함하고, -수신기 칩은 상기 각을 이룬 부분에 설치되는 것을 특징으로 하는 반도체 장치.
  4. 제3항에 있어서, 리드 프레임은 IR 대역내의 방사를 위하여 투과할 수 있는 밀봉 몸체에 의해 부분적으로 에워싸지고, 집적 회로, 수신기 칩, 및 전송 칩은 완전히 에워싸지는 것을 특징으로 하는 반도체 장치.
  5. 제4항에 있어서, 밀봉 몸체는 양쪽 경우에 광학적으로 굴절하는 소자로서 설계되어, 각각 전송 및 수신기 칩을 위한 하나의 렌즈 모양 표면을 가지는 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950040415A 1994-11-10 1995-11-09 양방향성 비전도 광 데이타 전송을 위한 반도체 장치 KR960019813A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4440088A DE4440088A1 (de) 1994-11-10 1994-11-10 Halbleiterbaugruppe für die bidirektionale, leitungsungebundene, optische Datenübertragung
DEP4440088.8 1994-11-10

Publications (1)

Publication Number Publication Date
KR960019813A true KR960019813A (ko) 1996-06-17

Family

ID=6532923

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950040415A KR960019813A (ko) 1994-11-10 1995-11-09 양방향성 비전도 광 데이타 전송을 위한 반도체 장치

Country Status (5)

Country Link
US (1) US5668383A (ko)
EP (1) EP0712161B1 (ko)
JP (1) JPH08228021A (ko)
KR (1) KR960019813A (ko)
DE (2) DE4440088A1 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19601949B4 (de) * 1995-01-13 2004-08-12 Stratos Lightwave, Inc. (n.d.Ges.d. Staates Delaware), Harwood Heights System zum Schaffen einer statischen Entladung und einer elektromagnetischen Abschirmung
CA2166357C (en) * 1995-12-29 2002-07-02 Albert John Kerklaan Infrared transceiver for an application interface card
JP3416942B2 (ja) * 1997-09-25 2003-06-16 住友電気工業株式会社 光モジュールおよび光モジュール用リードフレーム
DE19808004A1 (de) * 1998-02-26 1999-09-09 Vishay Semiconductor Gmbh Bauteil zur optischen Datenübertragung
US6169295B1 (en) 1998-05-29 2001-01-02 Maxim Integrated Products, Inc. Infrared transceiver module and method for making same
DE19845703C2 (de) * 1998-10-05 2000-11-23 Vishay Semiconductor Gmbh Bauteil zur optischen Datenübertragung
DE19952515C1 (de) * 1999-10-30 2000-12-28 Vishay Semiconductor Gmbh Verfahren zur Herstellung einer elektronischen Baugruppe
JP3712623B2 (ja) * 2001-02-01 2005-11-02 シャープ株式会社 半導体レーザパッケージ、その製造方法および光ピックアップ装置
DE20101830U1 (de) * 2001-02-02 2002-03-14 Siemens Ag System mit einem modularen Baugruppenträger zur zyklischen Ausgabe von internen Betriebsdaten mit einem IR-Sendemittel
JP2003244077A (ja) * 2002-02-18 2003-08-29 Sharp Corp リモコン送信機能付き赤外線通信用モジュール
US6762472B2 (en) 2002-08-30 2004-07-13 Agilent Technologies, Inc. Signal communication structures
JP4641762B2 (ja) * 2003-10-16 2011-03-02 シャープ株式会社 光半導体装置
US7947184B2 (en) * 2007-07-12 2011-05-24 Kimberly-Clark Worldwide, Inc. Treatment chamber for separating compounds from aqueous effluent
JP5024449B2 (ja) * 2008-04-23 2012-09-12 株式会社村田製作所 同軸コネクタ用レセプタクル

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1518089A (en) * 1975-07-30 1978-07-19 Marconi Co Ltd Optical couplers for electronic circuits
JPS5651884A (en) * 1979-10-03 1981-05-09 Hitachi Ltd Light sending and recieving element
DE3046140A1 (de) * 1980-12-06 1982-07-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt "signaluebertragungsverfahren, ein halbleiter-bauelement sowie ein elektro-optisches bauelement zur durchfuehrung des verfahrens"
FR2520934B1 (fr) * 1982-01-29 1985-06-07 Radiotechnique Compelec Dispositif semi-conducteur emetteur de lumiere a multicristaux
DE3687162D1 (de) * 1985-12-10 1993-01-07 Siemens Ag Integriert-optischer multiplex-demultiplex-modul fuer die optische nachrichtenuebertragung.
JPS63211687A (ja) * 1987-02-26 1988-09-02 Sumitomo Electric Ind Ltd 光送受信ユニツト
DE4031051C2 (de) * 1989-11-14 1997-05-07 Siemens Ag Modul mit mindestens einem Halbleiterschaltelement und einer Ansteuerschaltung
JPH02186680A (ja) * 1989-11-30 1990-07-20 New Japan Radio Co Ltd 光結合半導体装置の製造方法
DE3941679A1 (de) * 1989-12-18 1991-06-27 Telefunken Electronic Gmbh Fotomodul
DE4004053A1 (de) * 1990-02-10 1991-08-14 Standard Elektrik Lorenz Ag Integrierter optischer empfaenger und/oder sender
US5049973A (en) * 1990-06-26 1991-09-17 Harris Semiconductor Patents, Inc. Heat sink and multi mount pad lead frame package and method for electrically isolating semiconductor die(s)
DE4024575A1 (de) * 1990-08-02 1992-02-06 Bosch Gmbh Robert Halbleiteranordnungen auf substraten
DE4206437A1 (de) * 1992-02-29 1993-09-16 Telefunken Microelectron Halbleiter-baugruppe
DE4212948A1 (de) 1992-04-18 1993-10-21 Telefunken Microelectron Halbleiterbaugruppe, insbesondere Fernsteuer-Empfangsmodul
US5249245A (en) * 1992-08-31 1993-09-28 Motorola, Inc. Optoelectroinc mount including flexible substrate and method for making same
US5432630A (en) * 1992-09-11 1995-07-11 Motorola, Inc. Optical bus with optical transceiver modules and method of manufacture

Also Published As

Publication number Publication date
EP0712161A1 (de) 1996-05-15
DE4440088A1 (de) 1996-05-15
JPH08228021A (ja) 1996-09-03
US5668383A (en) 1997-09-16
EP0712161B1 (de) 1999-03-17
DE59505366D1 (de) 1999-04-22

Similar Documents

Publication Publication Date Title
KR960019813A (ko) 양방향성 비전도 광 데이타 전송을 위한 반도체 장치
DE3786861T2 (de) Halbleiteranordnung mit Gehäuse mit Kühlungsmitteln.
DE3762295D1 (de) Halbleiterspeichereinrichtung mit redundanzschaltungsteil.
TW329565B (en) The semiconductor component & its manufacturing method
DE68918442T2 (de) Flüssig gekühltes integriertes multichip-schaltungsmodul.
DE3675786D1 (de) Leistungshalbleitermodul mit integriertem waermerohr.
SE9702923D0 (sv) Power transistor module packaging structure
DE3584142D1 (de) Integrierte halbleiterschaltungsanordnung mit eingebauten speichern.
DE3879804D1 (de) Integrierte halbleiterschaltungsvorrichtung.
ATE47505T1 (de) Monolithisch integrierte halbleiterschaltung.
DE3889477T2 (de) Strahlungsempfindliche Halbleiteranordnung.
EP0777275A3 (en) Semiconductor module with heat sink
DE3582457D1 (de) Halbleitervorrichtung mit eingangs-/ausgangsschutzschaltung.
KR920003566A (ko) 반도체 발광장치
KR920010872A (ko) 멀티칩 모듈
DE69016748D1 (de) Hochleistungshalbleiteranordnung mit Gehäuse.
BR0015835A (pt) Suporte plano com ao menos um chip semicondutor
DE69013646T2 (de) Integrierte Halbleiterschaltungsvorrichtung mit Kontaktierungsflächen am Rande des Halbleiterchips.
DE3482156D1 (de) Einteilige waermesenke fuer einen elektronischen anordnungsmodul.
DE3584102D1 (de) Integrierte halbleiterschaltungsvorrichtung.
DE69014940D1 (de) Integrierte Halbleitervorrichtung mit einer aktiven Isolatorschaltung.
DE69202064T2 (de) Chipgehäuse mit Vertikalanschlüssen.
MA20423A1 (fr) Dispositif semi-conducteur .
ATE508621T1 (de) Elektrisch isoliertes modul
DE59003026D1 (de) Elektrisch isolierender Schaltungsträger mit integrierten Kühlmitteln.

Legal Events

Date Code Title Description
N231 Notification of change of applicant
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid