JP4641762B2 - 光半導体装置 - Google Patents
光半導体装置 Download PDFInfo
- Publication number
- JP4641762B2 JP4641762B2 JP2004241114A JP2004241114A JP4641762B2 JP 4641762 B2 JP4641762 B2 JP 4641762B2 JP 2004241114 A JP2004241114 A JP 2004241114A JP 2004241114 A JP2004241114 A JP 2004241114A JP 4641762 B2 JP4641762 B2 JP 4641762B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- optical semiconductor
- lead frame
- bent
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title claims description 46
- 239000004065 semiconductor Substances 0.000 title claims description 46
- 239000011347 resin Substances 0.000 claims description 55
- 229920005989 resin Polymers 0.000 claims description 55
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000005452 bending Methods 0.000 description 8
- 230000007257 malfunction Effects 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
Description
図1ないし図3は、本実施形態1に係る光半導体装置の製造過程を示す平面図、図4は本実施形態1に係る光半導体装置の外観図であり、(a)は平面図、(b)は正面図、(c)は側面図である。
111が予め形成されている。
図5及び図6は、本実施形態2に係る光半導体装置の製造過程を示す平面図、図7は本実施形態2に係る光半導体装置の外観図であり、(a)は平面図、(b)は正面図、(c)は側面図である。
部31dを逃がすための凹部311aを形成している。このように凹部311aを形成しておくことで、光半導体装置の全体形状を小型化することができ、リフロー実装時の実装面積を小さくすることができる。
図10は、本実施形態3に係る光半導体装置の外観図であり、(a)は平面図、(b)は底面図である。
11d,31d 端子部
11a〜11c 部品実装部
13 発光素子
14 受光素子
15 ICチップ(信号処理用ICチップ)
16 金線等
17,37 樹脂パッケージ
17a,311a 凹部
18,38 受光レンズ部
19,39 発光レンズ部
21,41 タイバー部
111,311 シールドケース部
111a 上面
111b 側面
111c 開口部
311a,311b 凹部
Claims (2)
- リードフレームを使用した受発光一体型の光半導体装置であって、
リードフレームのうち外部に延設された一部が屈曲形成されることにより、透光性樹脂モールドによって形成された樹脂パッケージの受光レンズ部及び発光レンズ部の間にシールドケース部として配置され、前記リードフレームより形成された端子部が前記樹脂パッケージの表面に沿うように屈曲形成されているとともに、前記樹脂パッケージの表面には前記屈曲形成された端子部を逃がす凹部が形成され、前記凹部が前記端子部のピッチに合わせて複数形成されていることを特徴とする光半導体装置。 - リードフレームを使用した受発光一体型の光半導体装置であって、
リードフレーム上に実装された発光素子、受光素子及び信号処理ICチップが透光性樹脂によってモールドされており、この樹脂モールド部によって形成された受光レンズ部及び発光レンズ部と樹脂モールド部から露出している端子部とを除く領域が遮光性導電性樹脂にてモールドされ、この遮光性導電性樹脂にてモールドされたシールドケース部の表面には、リードフレームより延設され前記シールドケース部の表面に沿うように屈曲形成されている前記端子部と干渉する部分に凹部が形成され、前記凹部が前記端子部のピッチに合わせて複数形成されていることを特徴とする光半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004241114A JP4641762B2 (ja) | 2003-10-16 | 2004-08-20 | 光半導体装置 |
CNB2004100881759A CN100350630C (zh) | 2003-10-16 | 2004-10-14 | 光半导体装置 |
US10/963,622 US7205574B2 (en) | 2003-10-16 | 2004-10-14 | Optical semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003356606 | 2003-10-16 | ||
JP2004241114A JP4641762B2 (ja) | 2003-10-16 | 2004-08-20 | 光半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005142530A JP2005142530A (ja) | 2005-06-02 |
JP4641762B2 true JP4641762B2 (ja) | 2011-03-02 |
Family
ID=34525403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004241114A Expired - Lifetime JP4641762B2 (ja) | 2003-10-16 | 2004-08-20 | 光半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7205574B2 (ja) |
JP (1) | JP4641762B2 (ja) |
CN (1) | CN100350630C (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007207965A (ja) * | 2006-02-01 | 2007-08-16 | Sharp Corp | 光半導体装置、光半導体装置の製造方法、および、電子機器 |
JP5268468B2 (ja) * | 2008-07-22 | 2013-08-21 | シャープ株式会社 | 表面実装型赤外線受光ユニット、表面実装型赤外線受光ユニット製造方法、および電子機器 |
JP5616047B2 (ja) * | 2009-10-19 | 2014-10-29 | 株式会社アドバンテスト | 製造装置、試験装置、製造方法および集積回路パッケージ |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07288332A (ja) * | 1994-02-25 | 1995-10-31 | Fujitsu Ltd | 光素子組立体とその製造方法 |
JPH11214741A (ja) * | 1998-01-21 | 1999-08-06 | Sharp Corp | 光空間伝送センサ |
JP2002076427A (ja) * | 2000-08-22 | 2002-03-15 | Citizen Electronics Co Ltd | 赤外線データ通信モジュール |
JP2002231973A (ja) * | 2001-01-18 | 2002-08-16 | Vishay Semiconductor Gmbh | 導電性ストリップ構造による光電素子 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270488A (en) * | 1990-07-27 | 1993-12-14 | Mitsubishi Denki Kabushiki Kaisha | Shield construction for electrical devices |
US5245198A (en) * | 1990-10-12 | 1993-09-14 | Sharp Kabushiki Kaisha | Optoelectronic device, metal mold for manufacturing the device and manufacturing method of the device using the metal mold |
JPH04267549A (ja) * | 1991-02-22 | 1992-09-24 | Nec Corp | 樹脂封止型半導体装置 |
SE468027B (sv) * | 1991-02-27 | 1992-10-19 | Asea Brown Boveri | Optoelektronisk komponent med halvledarelement innefattade i sluten kapsel, vilken kapsel bestaar av en kaapa som centreras och laases relativt en sockel medelst ett byggelement |
JP2971637B2 (ja) * | 1991-06-17 | 1999-11-08 | 富士通株式会社 | 半導体装置 |
JPH0590778A (ja) | 1991-09-27 | 1993-04-09 | Kyocera Corp | シールドケース付電子部品及びリードフレーム |
JPH06132424A (ja) | 1992-10-16 | 1994-05-13 | Fuji Electric Co Ltd | スイッチング半導体装置 |
US5506445A (en) * | 1994-06-24 | 1996-04-09 | Hewlett-Packard Company | Optical transceiver module |
DE4440088A1 (de) * | 1994-11-10 | 1996-05-15 | Telefunken Microelectron | Halbleiterbaugruppe für die bidirektionale, leitungsungebundene, optische Datenübertragung |
DE19653054A1 (de) * | 1996-12-19 | 1998-07-02 | Telefunken Microelectron | Optoelektronisches Bauelement zur Datenübertragung |
US6169295B1 (en) * | 1998-05-29 | 2001-01-02 | Maxim Integrated Products, Inc. | Infrared transceiver module and method for making same |
JP2000068530A (ja) * | 1998-08-24 | 2000-03-03 | Nec Corp | 光送受信モジュール |
JP4392890B2 (ja) | 1999-02-23 | 2010-01-06 | ローム株式会社 | 半導体集積回路 |
US6625036B1 (en) * | 1999-08-31 | 2003-09-23 | Rohm Co., Ltd. | Infrared data communication module and method of making the same |
JP4394799B2 (ja) * | 2000-03-03 | 2010-01-06 | ローム株式会社 | 表面実装型シングルインライン半導体装置 |
JP3417388B2 (ja) | 2000-07-19 | 2003-06-16 | 松下電器産業株式会社 | 半導体装置 |
DE10058608A1 (de) * | 2000-11-25 | 2002-05-29 | Vishay Semiconductor Gmbh | Leiterstreifenanordnung für ein gemouldetes elektronisches Bauelement und Verfahren zum Moulden |
-
2004
- 2004-08-20 JP JP2004241114A patent/JP4641762B2/ja not_active Expired - Lifetime
- 2004-10-14 US US10/963,622 patent/US7205574B2/en active Active
- 2004-10-14 CN CNB2004100881759A patent/CN100350630C/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07288332A (ja) * | 1994-02-25 | 1995-10-31 | Fujitsu Ltd | 光素子組立体とその製造方法 |
JPH11214741A (ja) * | 1998-01-21 | 1999-08-06 | Sharp Corp | 光空間伝送センサ |
JP2002076427A (ja) * | 2000-08-22 | 2002-03-15 | Citizen Electronics Co Ltd | 赤外線データ通信モジュール |
JP2002231973A (ja) * | 2001-01-18 | 2002-08-16 | Vishay Semiconductor Gmbh | 導電性ストリップ構造による光電素子 |
Also Published As
Publication number | Publication date |
---|---|
US20050082560A1 (en) | 2005-04-21 |
CN100350630C (zh) | 2007-11-21 |
US7205574B2 (en) | 2007-04-17 |
CN1610133A (zh) | 2005-04-27 |
JP2005142530A (ja) | 2005-06-02 |
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