KR960015907A

KR960015907A - Capacitor and manufacturing method thereof

Info

Publication number: KR960015907A
Application number: KR1019940027484A
Authority: KR
Inventors: 성강현
Original assignee: 이헌조; 엘지전자 주식회사
Priority date: 1994-10-26
Filing date: 1994-10-26
Publication date: 1996-05-22

Abstract

본 발명은 캐패시터 및 그의 제조방법에 관한 것으로, 본 발명의 제조방법은 반도체기판 위에 금속물질을 증착시킨 후 패터닝하여 하부공정수율을 형성하는 공정과, 상기 하부전극 위에 강유전체물질을 증착시켜 유전체막을 형성하는 공정과, 상기 유전체막의 양측 가장자리가 경사지도록 식각하는 공정과, 상기 유전체막 의에 금속물질을 증착시져 상부전극을 형성하는 공정을 포함하여 구성되며, 상기와 같이 유전체막의 양측 가장자리를 경사지게 식각하여 그 상부에 형성되는 전극의 접촉면적을 크게함으로써 정전용량을 증가시킬 수 있는 효과가 있다.The present invention relates to a capacitor and a method of manufacturing the same. The method of the present invention includes forming a lower process yield by depositing and patterning a metal material on a semiconductor substrate, and forming a dielectric film by depositing a ferroelectric material on the lower electrode. And etching the two edges of the dielectric film to be inclined, and forming a top electrode by depositing a metal material on the dielectric film, and etching both edges of the dielectric film to be inclined as described above. There is an effect that the capacitance can be increased by increasing the contact area of the electrode formed thereon.

Description

Capacitor and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 유전체막의 두께에 다른 유전상수의 변화를 도시한 그래프.2 is a graph showing the change of dielectric constant different in the thickness of the dielectric film.

Claims

And a lower electrode formed on the semiconductor substrate, a dielectric film formed so as to be inclined at both edges of the lower electrode, and an upper electrode formed on the dielectric film.

Depositing a metal material on the semiconductor substrate and patterning the lower electrode to form a lower electrode, depositing a ferroelectric material on the lower electrode to form a dielectric film, etching to incline both edges of the dielectric film, and And depositing a metal material on the dielectric film to form an upper electrode.

The method of claim 2, wherein the etching of both edges of the dielectric film to be inclined comprises coating and patterning a photoresist on the dielectric film; And applying the modified photoresist to etching reactive dielectric ions, and removing the photoresist.

The method of manufacturing a capacitor according to claim 3, wherein the step of performing heat treatment to deform both edges of the fort yeast is inclined at a temperature of 130C to 160C.

The method of claim 3, wherein the reactive ion etching process uses any one of CC1 ₄ , C1 ₂ , or BC1 ₃ as a main gas, and adds O ₂ to adjust the inclination angle. .

6. The method of claim 5, wherein the O ₂ gas has an addition ratio to the main gas of 10% or less.

※ Note: The disclosure is based on the initial application.