KR970052281A

KR970052281A - Method for forming charge storage electrode using precipitate formed in metal film

Info

Publication number: KR970052281A
Application number: KR1019950051945A
Authority: KR
Inventors: 이찬용
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1995-12-19
Filing date: 1995-12-19
Publication date: 1997-07-29

Abstract

본 발명은 콘택홀을 통해 반도체 기판(1)과 전기적으로 접속되는 폴리실리콘막(3)을 형성하는 단계; 상기 폴리실리콘막(3)상에 절연막(4)을 형성하는 단계; 포화되어 석출물(6)이 형성되도록 많은 불순물을 포함하는 금속막(5)을 상기 절연막(4) 상에 형성하는 단계; 상기 석출물(6)이 식각되지 않는 범위에서 상기 금속막(5)을 식각하는 단계; 상기 잔류되어 있는 석출물(6)을 식각 마스크로하여 상기 절연막(4)을 식각하여 절연막 패턴(4')을 형성하는 단계; 및 상기 절연막 패턴(4')을 식각 마스크로하여 하부의 상기 폴리실리콘막(3)을 식각함으로써 전하저장전극(3')의 표면적을 넓히는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 전자저장전극 형성방법에 관한 것이다.The present invention comprises the steps of forming a polysilicon film (3) electrically connected to the semiconductor substrate (1) through a contact hole; Forming an insulating film (4) on the polysilicon film (3); Forming a metal film (5) on the insulating film (4) containing a large amount of impurities to saturate to form a precipitate (6); Etching the metal film 5 in a range in which the precipitate 6 is not etched; Etching the insulating film 4 using the remaining precipitate 6 as an etching mask to form an insulating film pattern 4 '; And extending the surface area of the charge storage electrode 3 'by etching the polysilicon layer 3 below using the insulating layer pattern 4' as an etch mask. It relates to an electrode forming method.

Description

Method for forming charge storage electrode using precipitate formed in metal film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 내지 제4도는 본 발명에 따른 전하저장전극 형성 공정 단면도.1 to 4 are cross-sectional views of a process for forming a charge storage electrode according to the present invention.

Claims

A method of forming a charge storage electrode of a semiconductor device, comprising: forming a conductive layer for a charge storage electrode electrically connected to a semiconductor substrate through a contact hole; Forming an insulating film on the conductive layer; Forming a metal film on the insulating film containing a large amount of impurities so as to form a precipitate by being saturated; Etching the metal film in a range where the precipitate is not etched; Etching the insulating film using the remaining precipitate as an etching mask to form an insulating film pattern; And expanding the surface area of the charge storage electrode by etching the lower conductive layer using the insulating layer pattern as an etching mask.

The method of claim 1, wherein the conductive layer is a polysilicon film.

The method of claim 1, wherein the insulating film is an oxide film.

※ Note: The disclosure is based on the initial application.