KR930003395A - Capacitor Manufacturing Method of Semiconductor Device - Google Patents

Capacitor Manufacturing Method of Semiconductor Device Download PDF

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Publication number
KR930003395A
KR930003395A KR1019910012552A KR910012552A KR930003395A KR 930003395 A KR930003395 A KR 930003395A KR 1019910012552 A KR1019910012552 A KR 1019910012552A KR 910012552 A KR910012552 A KR 910012552A KR 930003395 A KR930003395 A KR 930003395A
Authority
KR
South Korea
Prior art keywords
polycrystalline silicon
silicon layer
semiconductor device
manufacturing
etching
Prior art date
Application number
KR1019910012552A
Other languages
Korean (ko)
Inventor
조경연
선용빈
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910012552A priority Critical patent/KR930003395A/en
Publication of KR930003395A publication Critical patent/KR930003395A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음.No content.

Description

반도체장치의 캐패시터 제조 방법Capacitor Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1(A)∼(C)도는 이 발명에 따른 캐패시터의 제조공정도이다.1 (A) to (C) are manufacturing process diagrams of a capacitor according to the present invention.

Claims (4)

반도체 장치의 제조방법에 있어서, 기판에 소정두께를 가지는 제1다결정 실리콘층을 침적하고 표면을 자연 산화시키는 공정과, 상기 제1다결정 실리콘층의 표면에 형성된 자연산화막은 마스크로 하여 제1다결정 실리콘층의 표면에 원뿔형의 돌기를 갖도록 식각하는 공정과, 상기 원뿔형의 돌기의 날카로운 부분을 완만하게 하고 스토리지 전극을 패터닝하는 공정과, 상술한 구조의 전표면에 유전막을 형성하는 공정과, 상기 유전막의 표면에 제2다결정 실리콘층으로 플레이트 전극을 형성하는 공정으로 이루어지는 반도체 장치의 캐패시터 제조방법.A method of manufacturing a semiconductor device, comprising depositing a first polycrystalline silicon layer having a predetermined thickness on a substrate and naturally oxidizing a surface thereof, and a natural oxide film formed on the surface of the first polycrystalline silicon layer as a mask to form first polycrystalline silicon. Etching to have conical protrusions on the surface of the layer, smoothing sharp portions of the conical protrusions, patterning storage electrodes, forming a dielectric film on the entire surface of the structure described above, and A method for manufacturing a capacitor of a semiconductor device, comprising the step of forming a plate electrode on the surface with a second polycrystalline silicon layer. 제1항에 있어서, 상기 제1다결정 실리콘층의 표면을 산화막에 높은 선택비를 가지는 식각방법으로 식각하는 반도체 장치의 캐패시터 제조방법.The method of claim 1, wherein the surface of the first polycrystalline silicon layer is etched by an etching method having a high selectivity to an oxide film. 제2항에 있어서, 상기 식각방법은 ECR플라즈마법인 반도체 장치의 캐패시터 제조방법.The method of claim 2, wherein the etching method is an ECR plasma method. 제1항에 있어서, 상기 원뿔형 돌기의 날카로운 부분을 경사회전시켜 건식식각하여 완만하게 하는 반도체 장치의 캐패시터 제조방법.The method of manufacturing a capacitor of claim 1, wherein the sharp portion of the conical protrusion is inclinedly rotated to be dry etched to make it smooth. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910012552A 1991-07-22 1991-07-22 Capacitor Manufacturing Method of Semiconductor Device KR930003395A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910012552A KR930003395A (en) 1991-07-22 1991-07-22 Capacitor Manufacturing Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910012552A KR930003395A (en) 1991-07-22 1991-07-22 Capacitor Manufacturing Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR930003395A true KR930003395A (en) 1993-02-24

Family

ID=67310170

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910012552A KR930003395A (en) 1991-07-22 1991-07-22 Capacitor Manufacturing Method of Semiconductor Device

Country Status (1)

Country Link
KR (1) KR930003395A (en)

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