KR960039372A - Capacitor of semiconductor device and manufacturing method thereof - Google Patents

Abstract

Disclosed are a capacitor of a semiconductor device and a method of manufacturing the same, which widen the surface area of a lower electrode by using cohesion of a silicide layer. A semiconductor device capacitor comprising a lower electrode, a dielectric film, and an upper electrode, comprising: an insulating film having a contact hole on a semiconductor substrate, a conductive layer connected to the substrate through the contact hole, and a surface of the conductive layer. A silicide layer having irregularities is provided, and the lower electrode is formed of the conductive layer and the silicide layer. According to the present invention, it is possible to obtain a capacitor having an increased capacitance by widening the surface area of the lower electrode by using the coagulation phenomenon of silicide.

Description

Capacitor of semiconductor device and manufacturing method thereof

As this is a public information case, the full text was not included.

1 to 5 are cross-sectional views showing the capacitor manufacturing method of the first embodiment according to the present invention in the process order.

Claims (6)

A capacitor of a semiconductor device comprising a lower electrode, a dielectric film, and an upper electrode, comprising: an insulating film having a contact hole on a semiconductor substrate; A conductive layer connected to the substrate through the contact hole; And a silicide layer having irregularities on the surface of the conductive layer, wherein the lower electrode comprises the conductive layer and the silicide layer. A capacitor of a semiconductor device comprising a lower electrode, a dielectric film, and an upper electrode, comprising: an insulating film having a contact hole on a semiconductor substrate; And a conductive layer connected to the substrate through the contact hole and having irregularities on the surface thereof, wherein the lower electrode is constituted by the conductive layer. A capacitor manufacturing method of a semiconductor device comprising a lower electrode, a dielectric film and an upper electrode, the method comprising: forming an insulating film having a contact hole on a semiconductor substrate; Forming a conductive layer connected to the substrate through the contact hole; Forming a transition metal layer on a surface of the conductive layer; And forming a silicide layer having irregularities on the surface of the conductive layer by reacting the conductive layer and the transition metal layer to use the conductive layer and the silicide layer as the lower electrode. The group of claim 3, wherein the transition metal layer is formed of Ti, Mo, Pt, W, Ta, Ni, Co, Pb, Hf, Zr, V, Cr, Fe, Nb, Ru, Rh, Re, Os, and Ir. Capacitor manufacturing method of a semiconductor device, characterized in that formed using one selected from. A capacitor manufacturing method of a semiconductor device comprising a lower electrode, a dielectric film and an upper electrode, the method comprising: forming an insulating film having a contact hole on a semiconductor substrate; Forming a conductive layer connected to the substrate through the contact hole; Forming a transition metal layer on a surface of the conductive layer; Reacting the conductive layer with the transition metal layer to form a silicide layer having irregularities on the surface of the conductive layer; And removing the silicide layer having irregularities on the surface to form irregularities on the surface of the conductive layer and using the conductive layer having the irregularities as the lower electrode. The method of claim 5, wherein the silicide layer is removed using a hydrofluoric acid solution. ※ Note: The disclosure is based on the initial application.