KR970054019A - Method for forming charge storage electrode of semiconductor device - Google Patents

Method for forming charge storage electrode of semiconductor device Download PDF

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Publication number
KR970054019A
KR970054019A KR1019950051511A KR19950051511A KR970054019A KR 970054019 A KR970054019 A KR 970054019A KR 1019950051511 A KR1019950051511 A KR 1019950051511A KR 19950051511 A KR19950051511 A KR 19950051511A KR 970054019 A KR970054019 A KR 970054019A
Authority
KR
South Korea
Prior art keywords
charge storage
storage electrode
semiconductor device
forming
forming charge
Prior art date
Application number
KR1019950051511A
Other languages
Korean (ko)
Inventor
신충식
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950051511A priority Critical patent/KR970054019A/en
Publication of KR970054019A publication Critical patent/KR970054019A/en

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Abstract

본 발명은 반도체 소자의 캐피시터 형성 방법에 있어서 전하저장전극 마스크인 감광막 패턴의 표면을 울퉁불퉁하게 형성하여 식각되는 전하저장전극용 전도막의 표면을 울퉁불퉁하게 형성하는 것을 특징으로 하는 전하저장전극 형성 방법에 관한 것으로 간단한 공정으로 표면적이 극대화된 전하저장전극을 형성하므로써, 공정의 단순화 및 고집적 소자의 캐패시턴스를 확보하는 효과가 있다.The present invention relates to a method of forming a capacitor of a semiconductor device, wherein the surface of the photoresist pattern, which is a charge storage electrode mask, is unevenly formed to form an uneven surface of the conductive film for the charge storage electrode to be etched. By forming a charge storage electrode with a maximum surface area in a simple process, it is possible to simplify the process and secure the capacitance of the highly integrated device.

Description

반도체 소자의 전자저장전극 형성 방법.Method for forming an electronic storage electrode of a semiconductor device.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 내지 제1C도는 본 발명에 따른 스택형 전하저장전극 형성 공정도.1A to 1C are diagrams illustrating a process of forming a stacked charge storage electrode according to the present invention.

Claims (1)

반도체 소자의 캐패시터 형성 방법에 있어서 전하저정전극 마스크인 감광막 패턴의 표면을 울퉁불퉁하게 형성하여 식각되는 전하저장전극용 전도막의 표면을 울퉁불퉁하게 형성하는 것을 특징으로 하는 전하저장전극 형성 방법.A method of forming a capacitor of a semiconductor device, wherein the surface of the photoresist pattern, which is a charge storage electrode mask, is unevenly formed to form an uneven surface of the conductive film for charge storage electrode to be etched. ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is to be disclosed based on the initial application.
KR1019950051511A 1995-12-18 1995-12-18 Method for forming charge storage electrode of semiconductor device KR970054019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950051511A KR970054019A (en) 1995-12-18 1995-12-18 Method for forming charge storage electrode of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950051511A KR970054019A (en) 1995-12-18 1995-12-18 Method for forming charge storage electrode of semiconductor device

Publications (1)

Publication Number Publication Date
KR970054019A true KR970054019A (en) 1997-07-31

Family

ID=66645766

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950051511A KR970054019A (en) 1995-12-18 1995-12-18 Method for forming charge storage electrode of semiconductor device

Country Status (1)

Country Link
KR (1) KR970054019A (en)

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