KR960012468A - 초기 입력단 이외의 내부 회로를 갖는 반도체 장치 - Google Patents

초기 입력단 이외의 내부 회로를 갖는 반도체 장치 Download PDF

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Publication number
KR960012468A
KR960012468A KR1019950031960A KR19950031960A KR960012468A KR 960012468 A KR960012468 A KR 960012468A KR 1019950031960 A KR1019950031960 A KR 1019950031960A KR 19950031960 A KR19950031960 A KR 19950031960A KR 960012468 A KR960012468 A KR 960012468A
Authority
KR
South Korea
Prior art keywords
semiconductor devices
input stage
internal circuits
initial input
circuits
Prior art date
Application number
KR1019950031960A
Other languages
English (en)
Other versions
KR0175989B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960012468A publication Critical patent/KR960012468A/ko
Application granted granted Critical
Publication of KR0175989B1 publication Critical patent/KR0175989B1/ko

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019950031960A 1994-09-27 1995-09-26 초기 입력단 이외의 내부 회로를 갖는 반도체 장치 KR0175989B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23104594A JP3450909B2 (ja) 1994-09-27 1994-09-27 半導体装置
JP94-231045 1994-09-27

Publications (2)

Publication Number Publication Date
KR960012468A true KR960012468A (ko) 1996-04-20
KR0175989B1 KR0175989B1 (ko) 1999-03-20

Family

ID=16917423

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950031960A KR0175989B1 (ko) 1994-09-27 1995-09-26 초기 입력단 이외의 내부 회로를 갖는 반도체 장치

Country Status (4)

Country Link
US (1) US5744838A (ko)
JP (1) JP3450909B2 (ko)
KR (1) KR0175989B1 (ko)
TW (1) TW390508U (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2766013B1 (fr) * 1997-07-10 1999-09-10 Sgs Thomson Microelectronics Piste d'interconnexion reliant, sur plusieurs niveaux de metallisation, une grille isolee d'un transistor a une diode de decharge au sein d'un circuit integre, et procede de realisation d'une telle piste
JP3298528B2 (ja) 1998-12-10 2002-07-02 日本電気株式会社 回路設計方法および装置、情報記憶媒体、集積回路装置
JP2002141421A (ja) 2000-10-31 2002-05-17 Toshiba Corp 半導体集積回路装置
JP4176342B2 (ja) * 2001-10-29 2008-11-05 川崎マイクロエレクトロニクス株式会社 半導体装置およびそのレイアウト方法
US6693783B2 (en) * 2002-04-08 2004-02-17 Exar Corporation Bounce tolerant fuse trimming circuit with controlled timing
TWI338346B (en) 2002-09-20 2011-03-01 Semiconductor Energy Lab Display device and manufacturing method thereof
JP4601919B2 (ja) * 2003-06-03 2010-12-22 パナソニック株式会社 半導体装置の製造方法
JP2007299898A (ja) * 2006-04-28 2007-11-15 Matsushita Electric Ind Co Ltd 半導体装置および半導体装置のレイアウト設計方法
JP2011175455A (ja) * 2010-02-24 2011-09-08 Renesas Electronics Corp 半導体集積回路装置、設計方法、設計装置、およびプログラム
US8413094B2 (en) * 2010-10-05 2013-04-02 International Business Machines Corporation Structure, design structure and process for increasing magnitude of device threshold voltage for low power applications

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0278230A (ja) * 1988-09-14 1990-03-19 Hitachi Ltd 半導体集積回路装置
US5270565A (en) * 1989-05-12 1993-12-14 Western Digital Corporation Electro-static discharge protection circuit with bimodal resistance characteristics
JPH03104159A (ja) * 1989-09-18 1991-05-01 Matsushita Electron Corp 半導体装置
JPH04158578A (ja) * 1990-10-22 1992-06-01 Matsushita Electron Corp 半導体装置及びその製造方法
JPH04291944A (ja) * 1991-03-20 1992-10-16 Fujitsu Ltd 半導体装置
JPH0522099A (ja) * 1991-07-11 1993-01-29 Nissan Motor Co Ltd 半導体入力保護回路
JP3184251B2 (ja) * 1991-07-25 2001-07-09 株式会社日立製作所 半導体装置
TW226476B (en) * 1993-08-06 1994-07-11 United Microelectronics Corp A method of using complete interlaced pre-poly gate source/drain N+ structure as the protection circuit for CMOS electrostatic discharge(ESD) protection
JPH07312424A (ja) * 1994-05-18 1995-11-28 Nippondenso Co Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JP3450909B2 (ja) 2003-09-29
JPH0897416A (ja) 1996-04-12
US5744838A (en) 1998-04-28
KR0175989B1 (ko) 1999-03-20
TW390508U (en) 2000-05-11

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