KR960011188B1 - 불휘발성 반도체 기억장치 및 그 동작방법 - Google Patents

불휘발성 반도체 기억장치 및 그 동작방법 Download PDF

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Publication number
KR960011188B1
KR960011188B1 KR1019920011330A KR920011330A KR960011188B1 KR 960011188 B1 KR960011188 B1 KR 960011188B1 KR 1019920011330 A KR1019920011330 A KR 1019920011330A KR 920011330 A KR920011330 A KR 920011330A KR 960011188 B1 KR960011188 B1 KR 960011188B1
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KR
South Korea
Prior art keywords
region
potential
voltage
gate
holding means
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Expired - Lifetime
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KR1019920011330A
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English (en)
Korean (ko)
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KR930001234A (ko
Inventor
기요미 나루케
세이지 야마다
에츠시 오비
마사미츠 오시키리
도모코 스즈키
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
다케다이 마사다카
도시바 마이크로 일렉트로닉스 가부시키가이샤
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Application filed by 아오이 죠이치, 가부시키가이샤 도시바, 다케다이 마사다카, 도시바 마이크로 일렉트로닉스 가부시키가이샤 filed Critical 아오이 죠이치
Publication of KR930001234A publication Critical patent/KR930001234A/ko
Application granted granted Critical
Publication of KR960011188B1 publication Critical patent/KR960011188B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel

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  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
KR1019920011330A 1991-06-27 1992-06-27 불휘발성 반도체 기억장치 및 그 동작방법 Expired - Lifetime KR960011188B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-157063 1991-06-27
JP15706391 1991-06-27

Publications (2)

Publication Number Publication Date
KR930001234A KR930001234A (ko) 1993-01-16
KR960011188B1 true KR960011188B1 (ko) 1996-08-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920011330A Expired - Lifetime KR960011188B1 (ko) 1991-06-27 1992-06-27 불휘발성 반도체 기억장치 및 그 동작방법

Country Status (4)

Country Link
US (3) US5452248A (enExample)
EP (1) EP0520505B1 (enExample)
KR (1) KR960011188B1 (enExample)
DE (1) DE69217738T2 (enExample)

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US5452251A (en) 1992-12-03 1995-09-19 Fujitsu Limited Semiconductor memory device for selecting and deselecting blocks of word lines
JP3342730B2 (ja) * 1993-03-17 2002-11-11 富士通株式会社 不揮発性半導体記憶装置
EP0621604A1 (en) * 1993-04-23 1994-10-26 STMicroelectronics S.r.l. Method for recovering floating-gate memory cells with low threshold voltage in flash-EEPROM memory devices
JP3462894B2 (ja) * 1993-08-27 2003-11-05 株式会社東芝 不揮発性半導体メモリ及びそのデータプログラム方法
US6091639A (en) 1993-08-27 2000-07-18 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
US5576991A (en) * 1994-07-01 1996-11-19 Advanced Micro Devices, Inc. Multistepped threshold convergence for a flash memory array
US5680350A (en) * 1994-12-14 1997-10-21 Micron Technology, Inc. Method for narrowing threshold voltage distribution in a block erased flash memory array
US5650964A (en) * 1995-06-07 1997-07-22 Advanced Micro Devices, Inc. Method of inhibiting degradation of ultra short channel charge-carrying devices during discharge
DE69521203T2 (de) * 1995-07-31 2006-01-12 Stmicroelectronics S.R.L., Agrate Brianza Flash-EEPROM mit gesteuerter Entladungszeit der Wortleitungs- und Sourcespannungen nach der Löschung
EP0793238A1 (en) * 1996-02-29 1997-09-03 STMicroelectronics S.r.l. Electrically programmable non-volatile memory cells device for a reduced number of programming cycles
JPH09320287A (ja) * 1996-05-24 1997-12-12 Nec Corp 不揮発性半導体記憶装置
JP3450625B2 (ja) * 1997-02-10 2003-09-29 東芝マイクロエレクトロニクス株式会社 不揮発性半導体記憶装置とその動作方法
JP2000504504A (ja) * 1997-02-12 2000-04-11 ヒュンダイ エレクトロニクス アメリカ インコーポレイテッド 不揮発性メモリ構造
JPH10261292A (ja) * 1997-03-18 1998-09-29 Nec Corp 不揮発性半導体記憶装置の消去方法
KR20000043884A (ko) * 1998-12-29 2000-07-15 김영환 스플리트 게이트형 플래쉬 메모리 셀의 소거 방법
TW451427B (en) * 1999-02-19 2001-08-21 Mitsubishi Electric Corp Non-volatile semiconductor memory device and the driving method, operation method and manufacturing method of the same
US6456537B1 (en) * 2000-06-27 2002-09-24 Alliance Semiconductor Techniques for erasing an erasable programmable read only memory (EPROM) cell
JP4083975B2 (ja) 2000-12-11 2008-04-30 株式会社ルネサステクノロジ 半導体装置
KR100395769B1 (ko) * 2001-06-21 2003-08-21 삼성전자주식회사 비휘발성 메모리 장치의 소거 방법
US6784483B2 (en) * 2002-09-04 2004-08-31 Macronix International Co., Ltd. Method for preventing hole and electron movement in NROM devices
US7759719B2 (en) * 2004-07-01 2010-07-20 Chih-Hsin Wang Electrically alterable memory cell
KR100558004B1 (ko) * 2003-10-22 2006-03-06 삼성전자주식회사 게이트 전극과 반도체 기판 사이에 전하저장층을 갖는비휘발성 메모리 소자의 프로그램 방법
US7079424B1 (en) * 2004-09-22 2006-07-18 Spansion L.L.C. Methods and systems for reducing erase times in flash memory devices
DE102005023460A1 (de) * 2005-05-20 2006-11-30 Infineon Technologies Ag Verfahren zum Betreiben eines MOSFET als Antifuse
EP1909290B1 (en) * 2006-08-24 2009-10-07 STMicroelectronics S.r.l. Method for compacting the erased threshold voltage distribution of flash memory devices during writing operations
US10303998B2 (en) * 2017-09-28 2019-05-28 International Business Machines Corporation Floating gate for neural network inference

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4173791A (en) * 1977-09-16 1979-11-06 Fairchild Camera And Instrument Corporation Insulated gate field-effect transistor read-only memory array
JPS5571072A (en) * 1978-11-24 1980-05-28 Hitachi Ltd Semiconductor nonvolatile memory
JPS57157573A (en) * 1981-03-25 1982-09-29 Fujitsu Ltd Semiconductor non-volatile memory cell
US4742491A (en) * 1985-09-26 1988-05-03 Advanced Micro Devices, Inc. Memory cell having hot-hole injection erase mode
IT1191566B (it) * 1986-06-27 1988-03-23 Sgs Microelettronica Spa Dispositivo di memoria non labile a semiconduttore del tipo a porta non connessa (floating gate) alterabile elettricamente con area di tunnel ridotta e procedimento di fabbricazione
JPS63249375A (ja) * 1987-04-06 1988-10-17 Oki Electric Ind Co Ltd 半導体記憶装置のデ−タ消去方法
DE3874455T2 (de) * 1987-07-29 1993-04-08 Toshiba Kawasaki Kk Nichtfluechtiger halbleiterspeicher.
EP0369676B1 (en) * 1988-11-17 1995-11-08 Seiko Instr Inc Non-volatile semiconductor memory.
JP2638654B2 (ja) * 1990-02-06 1997-08-06 三菱電機株式会社 半導体不揮発性記憶装置
JPH0453096A (ja) * 1990-06-19 1992-02-20 Toshiba Corp アナログ記憶装置
US5280446A (en) * 1990-09-20 1994-01-18 Bright Microelectronics, Inc. Flash eprom memory circuit having source side programming
KR960002004B1 (ko) * 1991-02-19 1996-02-09 가부시키가이샤 도시바 기록검증 제어회로를 갖춘 전기적으로 소거 및 프로그램가능한 독출전용 기억장치
US5272669A (en) * 1991-02-20 1993-12-21 Sundisk Corporation Method and structure for programming floating gate memory cells

Also Published As

Publication number Publication date
DE69217738D1 (de) 1997-04-10
EP0520505B1 (en) 1997-03-05
US5623445A (en) 1997-04-22
US5452248A (en) 1995-09-19
EP0520505A3 (enExample) 1995-02-15
EP0520505A2 (en) 1992-12-30
KR930001234A (ko) 1993-01-16
DE69217738T2 (de) 1997-07-24
US5751636A (en) 1998-05-12

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