KR960009244B1 - Integrated multistage decoder - Google Patents

Integrated multistage decoder Download PDF

Info

Publication number
KR960009244B1
KR960009244B1 KR88002742A KR880002742A KR960009244B1 KR 960009244 B1 KR960009244 B1 KR 960009244B1 KR 88002742 A KR88002742 A KR 88002742A KR 880002742 A KR880002742 A KR 880002742A KR 960009244 B1 KR960009244 B1 KR 960009244B1
Authority
KR
South Korea
Prior art keywords
integrated multistage
multistage decoder
decoder
integrated
multistage
Prior art date
Application number
KR88002742A
Other languages
English (en)
Other versions
KR880011792A (ko
Inventor
Kurt Hoffmann
Rainer Kraus
Oskar Kowarik
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of KR880011792A publication Critical patent/KR880011792A/ko
Application granted granted Critical
Publication of KR960009244B1 publication Critical patent/KR960009244B1/ko

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30Accessing single arrays
    • G11C29/34Accessing multiple bits simultaneously
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/12Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR88002742A 1987-03-16 1988-03-16 Integrated multistage decoder KR960009244B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE3708532 1987-03-16
DEP3708522.8 1987-03-16
DE3708522 1987-03-16
DEP3708522.0 1987-03-16

Publications (2)

Publication Number Publication Date
KR880011792A KR880011792A (ko) 1988-10-31
KR960009244B1 true KR960009244B1 (en) 1996-07-16

Family

ID=25853538

Family Applications (1)

Application Number Title Priority Date Filing Date
KR88002742A KR960009244B1 (en) 1987-03-16 1988-03-16 Integrated multistage decoder

Country Status (6)

Country Link
US (1) US4855621A (ko)
EP (1) EP0283908B1 (ko)
JP (1) JP2603206B2 (ko)
KR (1) KR960009244B1 (ko)
DE (1) DE3862969D1 (ko)
HK (1) HK113393A (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE87753T1 (de) * 1988-02-10 1993-04-15 Siemens Ag Redundanzdekoder eines integrierten halbleiterspeichers.
KR910003594B1 (ko) * 1988-05-13 1991-06-07 삼성전자 주식회사 스페어컬럼(column)선택방법 및 회로
FR2635600A1 (fr) * 1988-08-19 1990-02-23 Philips Nv Unite de memoire adressable a circuit de selection d'unite ameliore
KR920009059B1 (ko) * 1989-12-29 1992-10-13 삼성전자 주식회사 반도체 메모리 장치의 병렬 테스트 방법
EP0475588B1 (en) * 1990-08-17 1996-06-26 STMicroelectronics, Inc. A semiconductor memory with inhibited test mode entry during power-up
US5072138A (en) * 1990-08-17 1991-12-10 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with sequential clocked access codes for test mode entry
US5072137A (en) * 1990-08-17 1991-12-10 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with a clocked access code for test mode entry
DE69129492T2 (de) * 1990-10-02 1998-11-05 Toshiba Kk Halbleiterspeicher
JP2786020B2 (ja) * 1991-02-22 1998-08-13 日本電気アイシーマイコンシステム株式会社 半導体メモリ装置
US5631868A (en) * 1995-11-28 1997-05-20 International Business Machines Corporation Method and apparatus for testing redundant word and bit lines in a memory array
JP4235122B2 (ja) * 2004-02-06 2009-03-11 シャープ株式会社 半導体記憶装置及び半導体記憶装置のテスト方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2538373C3 (de) * 1975-08-28 1978-04-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Schaltungsanordnung zum Einsatz von teilfunktionsfahigen Halbleiterbausteinen in einem Speicher
US4194130A (en) * 1977-11-21 1980-03-18 Motorola, Inc. Digital predecoding system
JPS5833633B2 (ja) * 1978-08-25 1983-07-21 シャープ株式会社 Mosトランジスタ・デコ−ダ
JPS5873097A (ja) * 1981-10-27 1983-05-02 Nec Corp デコ−ダ−回路
JPS58164099A (ja) * 1982-03-25 1983-09-28 Toshiba Corp 半導体メモリ−
JPS5990291A (ja) * 1982-11-16 1984-05-24 Nec Corp メモリ
US4672240A (en) * 1983-02-07 1987-06-09 Westinghouse Electric Corp. Programmable redundancy circuit
JPS6059588A (ja) * 1983-09-12 1985-04-05 Hitachi Ltd 半導体記憶装置
US4720817A (en) * 1985-02-26 1988-01-19 Texas Instruments Incorporated Fuse selection of predecoder output
EP0198935A1 (de) * 1985-04-23 1986-10-29 Deutsche ITT Industries GmbH Elektrisch umprogrammierbarer Halbleiterspeicher mit Redundanz
US4691300A (en) * 1985-12-20 1987-09-01 Motorola, Inc. Redundant column substitution architecture with improved column access time
US4721868A (en) * 1986-09-23 1988-01-26 Advanced Micro Devices, Inc. IC input circuitry programmable for realizing multiple functions from a single input

Also Published As

Publication number Publication date
JPS63244491A (ja) 1988-10-11
EP0283908A1 (de) 1988-09-28
HK113393A (en) 1993-10-29
JP2603206B2 (ja) 1997-04-23
DE3862969D1 (de) 1991-07-04
US4855621A (en) 1989-08-08
EP0283908B1 (de) 1991-05-29
KR880011792A (ko) 1988-10-31

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