KR960008335A - 반도체 집적회로의 정지시 전류측정법 및 그에 적합한 반도체 회로 - Google Patents

반도체 집적회로의 정지시 전류측정법 및 그에 적합한 반도체 회로 Download PDF

Info

Publication number
KR960008335A
KR960008335A KR1019950024614A KR19950024614A KR960008335A KR 960008335 A KR960008335 A KR 960008335A KR 1019950024614 A KR1019950024614 A KR 1019950024614A KR 19950024614 A KR19950024614 A KR 19950024614A KR 960008335 A KR960008335 A KR 960008335A
Authority
KR
South Korea
Prior art keywords
circuits
stop
measurement method
current measurement
semiconductor
Prior art date
Application number
KR1019950024614A
Other languages
English (en)
Other versions
KR100292728B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960008335A publication Critical patent/KR960008335A/ko
Application granted granted Critical
Publication of KR100292728B1 publication Critical patent/KR100292728B1/ko

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. by varying supply voltage
    • G01R31/3004—Current or voltage test
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Logic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019950024614A 1994-08-30 1995-08-09 반도체 집적회로의 정지시 전류측정법 및 그에 적합한 반도체 집적 회로 KR100292728B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20472894A JP3157683B2 (ja) 1994-08-30 1994-08-30 半導体集積回路の静止時電流測定法、半導体集積回路
JP94-204728 1994-08-30

Publications (2)

Publication Number Publication Date
KR960008335A true KR960008335A (ko) 1996-03-22
KR100292728B1 KR100292728B1 (ko) 2001-06-15

Family

ID=16495336

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950024614A KR100292728B1 (ko) 1994-08-30 1995-08-09 반도체 집적회로의 정지시 전류측정법 및 그에 적합한 반도체 집적 회로

Country Status (6)

Country Link
US (3) US5672982A (ko)
EP (1) EP0699998B1 (ko)
JP (1) JP3157683B2 (ko)
KR (1) KR100292728B1 (ko)
DE (1) DE69517759T2 (ko)
TW (1) TW357270B (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4319710C1 (de) * 1993-06-15 1994-09-29 Ita Ingb Testaufgaben Gmbh Testverfahren für einen auf einer Platine eingelöteten IC und Testvorrichtung zum Durchführen des Testverfahrens
KR970029758A (ko) * 1995-11-09 1997-06-26 리 패치 저전압 cmos 회로용 누설 전류 제어 시스템 및 그 방법
DE19611520A1 (de) * 1996-03-23 1997-09-25 Bosch Gmbh Robert System zum Test eines in einem Steuergerät eingebauten Rechners
WO2000011486A1 (fr) * 1998-08-24 2000-03-02 Hitachi, Ltd. Circuit integre a semi-conducteur
US6396315B1 (en) * 1999-05-03 2002-05-28 Agere Systems Guardian Corp. Voltage clamp for a failsafe buffer
US6424177B1 (en) 1999-06-28 2002-07-23 Broadcom Corporation Universal single-ended parallel bus
US6377086B1 (en) 1999-10-05 2002-04-23 Agere Systems Guardian Corp. Low power dual-voltage sense circuit buffer
KR100594287B1 (ko) * 2004-07-05 2006-06-30 삼성전자주식회사 넓은 범위의 입력 전압에 대응 가능한 입력 버퍼
KR100728572B1 (ko) 2006-06-29 2007-06-15 주식회사 하이닉스반도체 반도체 메모리 장치
JPWO2009013814A1 (ja) * 2007-07-24 2010-09-24 富士通株式会社 半導体装置
US20130033285A1 (en) * 2011-08-02 2013-02-07 Globalfoundries Inc. Methods for reliability testing of semiconductor devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8900050A (nl) * 1989-01-10 1990-08-01 Philips Nv Inrichting voor het meten van een ruststroom van een geintegreerde monolitische digitale schakeling, geintegreerde monolitische digitale schakeling voorzien van een dergelijke inrichting en testapparaat voorzien van een dergelijke inrichting.
US5371457A (en) * 1991-02-12 1994-12-06 Lipp; Robert J. Method and apparatus to test for current in an integrated circuit
DE69330219T2 (de) * 1992-06-15 2001-08-30 Fujitsu Ltd., Kawasaki Integrierte Halbleiterschaltung mit für einen Betrieb mit geringer Amplitude angepasster Eingangs/Ausgangs-Schnittstelle
JPH0677786A (ja) * 1992-08-26 1994-03-18 Mitsubishi Electric Corp 半導体集積回路装置
US5508649A (en) * 1994-07-21 1996-04-16 National Semiconductor Corporation Voltage level triggered ESD protection circuit
US5594373A (en) * 1994-12-20 1997-01-14 Sgs-Thomson Microelectronics, Inc. Output driver circuitry with selective limited output high voltage
KR0121137B1 (ko) * 1994-12-31 1997-12-04 문정환 센스 앰프의 구동 신호 발생 회로
US5712857A (en) * 1995-09-29 1998-01-27 Intel Corporation Methods and apparatus for correlating stuck-at fault test coverage and current leakage fault test coverage
US5847581A (en) * 1996-12-31 1998-12-08 Intel Corporation Low power CMOS precision input receiver with integrated reference

Also Published As

Publication number Publication date
DE69517759D1 (de) 2000-08-10
KR100292728B1 (ko) 2001-06-15
US5783947A (en) 1998-07-21
JPH0868827A (ja) 1996-03-12
DE69517759T2 (de) 2001-02-01
US6064233A (en) 2000-05-16
US5672982A (en) 1997-09-30
EP0699998B1 (en) 2000-07-05
EP0699998A1 (en) 1996-03-06
JP3157683B2 (ja) 2001-04-16
TW357270B (en) 1999-05-01

Similar Documents

Publication Publication Date Title
DE69031551D1 (de) Integrierte Halbleiterschaltung und Testmethode dafür
DE69534700D1 (de) Halbleiteranordnungen und verfahren
GB2304231B (en) Semiconductor integrated circuit device and method of manufacturing the same
DE69520974D1 (de) Eine integrierte Halbleiterschaltung
KR960009110A (ko) 반도체 장치 및 그 제조방법
KR100199260B1 (en) Semiconductor integrated circuit device and fabrication method of the same
DE69721411D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
KR960009107A (ko) 반도체장치와 그 제조방법
DE69533998D1 (de) Entwurf von integrierten Halbleiterschaltungen
DE69604810D1 (de) Halbleiter-wafer test und burn-in
KR950034612A (ko) 반도체 구조물 및 그 제조 방법
DE69118952D1 (de) Halbleitervorrichtung mit integrierter Halbleiterschaltung und Betriebsverfahren dafür
KR960015900A (ko) 반도체 장치 및 그 제조방법
DE69708879D1 (de) Z-achsenzwischenverbindungsverfahren und schaltung
KR860004457A (ko) 반도체 집적회로장치 및 그의 제조방법과 제조장치
DE69325343D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
GB2286082B (en) Semiconductor device and method of fabrication therefor
KR960012313A (ko) 반도체 장치 및 그 제조방법
GB2290165B (en) Semiconductor device and method of fabrication thereof
EP0897523A4 (en) SEMICONDUCTOR BRIDGE DEVICE AND MANUFACTURING METHOD
KR960008335A (ko) 반도체 집적회로의 정지시 전류측정법 및 그에 적합한 반도체 회로
KR890015418A (ko) 반도체 집적회로와 그 제조방법
DE69408248D1 (de) Bipolares Halbleiterbauelement und Herstellungsverfahren
KR860005450A (ko) 반도체 집적 회로장치 및 그의 제조방법
DE69815289D1 (de) Spannungsreglerschaltungen und halbleiterschaltung

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20050309

Year of fee payment: 5

LAPS Lapse due to unpaid annual fee