KR960007750A - 미세가공 표면처리제 - Google Patents
미세가공 표면처리제 Download PDFInfo
- Publication number
- KR960007750A KR960007750A KR1019940019157A KR19940019157A KR960007750A KR 960007750 A KR960007750 A KR 960007750A KR 1019940019157 A KR1019940019157 A KR 1019940019157A KR 19940019157 A KR19940019157 A KR 19940019157A KR 960007750 A KR960007750 A KR 960007750A
- Authority
- KR
- South Korea
- Prior art keywords
- treatment agent
- surface treatment
- silicon
- polyoxyethylene
- hydrocarbon
- Prior art date
Links
- 238000005459 micromachining Methods 0.000 title 1
- 238000004381 surface treatment Methods 0.000 title 1
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract 5
- 229930195733 hydrocarbon Natural products 0.000 claims abstract 5
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract 5
- 239000002736 nonionic surfactant Substances 0.000 claims abstract 5
- 239000012756 surface treatment agent Substances 0.000 claims abstract 5
- 239000003795 chemical substances by application Substances 0.000 claims abstract 3
- 230000008595 infiltration Effects 0.000 claims abstract 2
- 238000001764 infiltration Methods 0.000 claims abstract 2
- -1 polyoxyethylene Polymers 0.000 claims 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 150000002148 esters Chemical class 0.000 claims 1
- 150000002170 ethers Chemical class 0.000 claims 1
- 230000002209 hydrophobic effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229920002114 octoxynol-9 Polymers 0.000 claims 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000009499 grossing Methods 0.000 abstract 1
- 230000035699 permeability Effects 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/722—Ethers of polyoxyalkylene glycols having mixed oxyalkylene groups; Polyalkoxylated fatty alcohols or polyalkoxylated alkylaryl alcohols with mixed oxyalkylele groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Detergent Compositions (AREA)
Abstract
1. 청구범위에 기재된 발명이 속한 기술분야
반도체 소자를 제조할 때 실리콘상의 산화막을 습식으로 제거, 에칭 및 실리콘 표면을 세정하기 위해 사용되는 미세가공 표면처리제.
2. 발명이 해결하려고 하는 기술적 과제
처리제의 저입자성, 실리콘 표면에의 젖음성 및 미세간격에의 침투성, 실리콘 표면의 평활처리, 실리콘 표면에의 저입자 부착성, 처리제의 안정성, 고순도성, 실리콘 표면의 세정 또는 산화막의 에칭효과 개선.
3. 발명의 해결방법의 요지
불화수소산에 HLB값이 7∼17인 탄화수소계 비이온 계면활성제를 함유시켜 침윤성이 우수한 미세가공 표면처리제.
4. 발명의 중요한 용도.
반도체 소자 제조공정시의 표면처리제.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 계면활성제 농도와 액증입자의 관계를 나타내는 도면.
제2도는 계면활성제 농도와 부착입자수와의 관계를 나타내는 도면.
Claims (4)
- 불화수소산에 HLB값이 7∼17의 탄화수소계 비이온 계면활성제를 함유시킨 것을 특징으로 하는 침윤성이 우수한 미세가공 표면처리제.
- 제1항에 있어서, 탄화수소계 비이온 계면활성제가 폴리옥시에틸렌 고급알코올에테르, 폴리옥시에틸렌올레산에스테르, 폴리옥시에틸렌라우릴에테르, 폴리옥시에틸렌노닐페닐에테르, 폴리옥시에틸렌옥틸페닐에테르, 폴리옥시에틸렌알킬알릴에테르의 군으로부터 선택된 적어도 하나인 것을 특징으로 하는 미세가공 표면처리제.
- 제1항에 있어서, 탄화수소계 비이온 계면활성제가 10∼1000ppm 함유되어 있는 것을 특징으로 하는 미세가공 표면처리제.
- 제1항에 있어서, 탄화수소계 비이온 계면활성제의 HLB 값이 10∼15인 것을 특징으로 하는 미세가공 표면 처리제.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940019157A KR100349816B1 (ko) | 1994-08-03 | 1994-08-03 | 미세가공 표면처리제 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940019157A KR100349816B1 (ko) | 1994-08-03 | 1994-08-03 | 미세가공 표면처리제 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960007750A true KR960007750A (ko) | 1996-03-22 |
| KR100349816B1 KR100349816B1 (ko) | 2002-10-31 |
Family
ID=66698101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940019157A KR100349816B1 (ko) | 1994-08-03 | 1994-08-03 | 미세가공 표면처리제 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100349816B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100427759B1 (ko) * | 2001-11-13 | 2004-04-28 | 주식회사 아담스테크놀로지 | 액정디스플레이 패널용 마이크로에멀젼 수계 세정제 조성물 |
-
1994
- 1994-08-03 KR KR1019940019157A patent/KR100349816B1/ko not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100427759B1 (ko) * | 2001-11-13 | 2004-04-28 | 주식회사 아담스테크놀로지 | 액정디스플레이 패널용 마이크로에멀젼 수계 세정제 조성물 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100349816B1 (ko) | 2002-10-31 |
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