KR960005990A - Capacitor Manufacturing Method of Semiconductor Device - Google Patents

Capacitor Manufacturing Method of Semiconductor Device Download PDF

Info

Publication number
KR960005990A
KR960005990A KR1019940017163A KR19940017163A KR960005990A KR 960005990 A KR960005990 A KR 960005990A KR 1019940017163 A KR1019940017163 A KR 1019940017163A KR 19940017163 A KR19940017163 A KR 19940017163A KR 960005990 A KR960005990 A KR 960005990A
Authority
KR
South Korea
Prior art keywords
film
forming
charge storage
storage electrode
polysilicon
Prior art date
Application number
KR1019940017163A
Other languages
Korean (ko)
Other versions
KR0140806B1 (en
Inventor
김석수
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940017163A priority Critical patent/KR0140806B1/en
Publication of KR960005990A publication Critical patent/KR960005990A/en
Application granted granted Critical
Publication of KR0140806B1 publication Critical patent/KR0140806B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

본 발명은 반도체 소자의 캐패시터 제조방법에 관한 것으로 특히 선택적 폴리실리콘막과 선택적 산화막의 성장기술을 이용하여 캐패시터를 제조하여 그 유효면적을 극대화함으로써 반도체 소자의 수율 및 신뢰성을 향상시키는 효과를 갖는 반도체 소자의 캐패시터 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a capacitor of a semiconductor device. In particular, a semiconductor device having an effect of improving the yield and reliability of a semiconductor device by manufacturing a capacitor using a growth technology of a selective polysilicon film and a selective oxide film and maximizing its effective area It relates to a capacitor manufacturing method of.

Description

반도체 소자의 캐패시터 제조방법Capacitor Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1A도 내지 제1E도는 본 발명의 일실시예에 따른 캐패시터 제조공정 단면도이다.1A to 1E are cross-sectional views of a capacitor manufacturing process according to an embodiment of the present invention.

Claims (2)

반도체 소자의 캐패시터 제조방법에 있어서, 제1절연막(1) 및 제2절연막(2)을 형성한 다음 전하저장전극 콘택용 감광막을 사용하여 전하저장전극 콘택홀을 오픈하는 단계; 전체구조 상부에 제1폴리실리콘막(3)을 형성한 다음 그 상부에 전하저장전극 형성용 제1감광막(10)패턴을 형성하는 단계; 상기 전하저장전극 형성용 제1 감광막(10)을 이용하여 폴리실리콘막(3)의 일부를 식각한 다음 상기 전하저장전극 형성용 제1감광막(10)을 제거하는 단계; 전체구조 상부에 산화막을 도포한 다음 전면식각하여 상기제1폴리실리콘막(3)측벽에 스페이서산화막(4)을 형성한 후 산화막이 있는 부위에서만 성장하는 선택적 성장 산화막의 특성을 이용하여 선택적성장 산화막(5)을 성장시키는 단계; 폴리실리콘막이 있는 곳에서만 성장하는 선택적 성장 폴리실리콘막의 특성을 이용하여 선택적으로 성장 제2폴리실리콘막(6)을 성장시킨 후 그 상부에 전하저장전극 형성용 제2감광막(20)패턴을 형성하는 단계; 상기 전하저장전극 형성용 제2감광막(20)을 마스크로 이용하여 선택적 성장 제2폴리실리콘막(6) 및 제1폴리실리콘막(3)을 차례로 식각한 다음, 상기 전하저장전극 형성용 제2감광막(20)을 제거하는 단계; 전하저장전극의 상부 및 하부에 남아있는 선택적 성장 산화막(5) 스페이서산화막 (4) 제2절연막(2)을 식각하여 제거하는 단계; 상기 전체구조 표면에 유전막(7)을 증착하고, 플레이트전극을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 캐패시터 제조방법A method for manufacturing a capacitor of a semiconductor device, comprising: forming a first insulating film (1) and a second insulating film (2), and then opening a charge storage electrode contact hole using a photosensitive film for charge storage electrode contact; Forming a first polysilicon film 3 on the entire structure, and then forming a first photoresist film 10 for forming a charge storage electrode thereon; Etching a part of the polysilicon film 3 using the first photosensitive film 10 for forming the charge storage electrode, and then removing the first photosensitive film 10 for forming the charge storage electrode; After the oxide film is coated on the entire structure, the entire surface is etched to form the spacer oxide film 4 on the sidewall of the first polysilicon film 3, and then the selective growth oxide film is formed using the characteristic of the selective growth oxide film grown only in the region where the oxide film is present. (5) growing; By selectively growing the growth second polysilicon film 6 using the characteristics of the selective growth polysilicon film grown only in the place where the polysilicon film is present, the second photoresist film 20 for forming a charge storage electrode is formed thereon. step; The selective growth second polysilicon layer 6 and the first polysilicon layer 3 are sequentially etched using the second photosensitive layer 20 for forming the charge storage electrode as a mask, and then the second formation layer for forming the charge storage electrode is formed. Removing the photosensitive film 20; Etching and removing the selective growth oxide layer (5) spacer oxide layer (4) and the second insulating layer (2) remaining on the upper and lower portions of the charge storage electrode; And depositing a dielectric film (7) on the surface of the entire structure and forming a plate electrode. 제1항에 있어서, 상기 전하저장전극 형성용 제1감광막(10)을 이용하여 제1폴리실리콘막(3)을 식각할 때, 상기 제1폴리실리콘막(3)의 노출부위를 완전히 식각하는 것을 특징으로 하는 반도체 소자의 캐패시터 제조방법The method of claim 1, wherein when the first polysilicon film 3 is etched using the first photosensitive film 10 for forming the charge storage electrode, an exposed portion of the first polysilicon film 3 is completely etched. Capacitor manufacturing method of a semiconductor device, characterized in that ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940017163A 1994-07-15 1994-07-15 Manufacturing method for capacitor of semiconductor device KR0140806B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940017163A KR0140806B1 (en) 1994-07-15 1994-07-15 Manufacturing method for capacitor of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940017163A KR0140806B1 (en) 1994-07-15 1994-07-15 Manufacturing method for capacitor of semiconductor device

Publications (2)

Publication Number Publication Date
KR960005990A true KR960005990A (en) 1996-02-23
KR0140806B1 KR0140806B1 (en) 1998-06-01

Family

ID=19388135

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940017163A KR0140806B1 (en) 1994-07-15 1994-07-15 Manufacturing method for capacitor of semiconductor device

Country Status (1)

Country Link
KR (1) KR0140806B1 (en)

Also Published As

Publication number Publication date
KR0140806B1 (en) 1998-06-01

Similar Documents

Publication Publication Date Title
KR960005990A (en) Capacitor Manufacturing Method of Semiconductor Device
KR950026042A (en) Multilayer Capacitor Manufacturing Method
KR100328824B1 (en) Manufacturing method for capacitor
KR950007106A (en) DRAM Cell Capacitor Manufacturing Method
KR0164152B1 (en) Capacitor fabrication method of semiconductor device
KR960006027A (en) Capacitor Manufacturing Method of Semiconductor Device
KR940008072A (en) Capacitor manufacturing method having high storage capacity of semiconductor device
KR960006031A (en) Capacitor Manufacturing Method of Semiconductor Device
JPH09307079A (en) Manufacture of memory cell capacitor
KR960019512A (en) Contact hole formation method of semiconductor device
KR960035984A (en) Accumulation electrode manufacturing method of capacitor
KR970054044A (en) Capacitor Manufacturing Method of Semiconductor Device
KR970054043A (en) Capacitor Manufacturing Method of Semiconductor Memory Device
KR970018747A (en) Capacitor Manufacturing Method of Semiconductor Device
KR960002789A (en) Capacitor Manufacturing Method of Semiconductor Device
KR970030326A (en) Contact hole formation method of semiconductor device
KR950021548A (en) Capacitor of Semiconductor Memory Device and Manufacturing Method Thereof
KR960005991A (en) Capacitor of semiconductor device and manufacturing method thereof
KR970013348A (en) Capacitor Manufacturing Method of Semiconductor Device
KR960026796A (en) Capacitor Manufacturing Method of Semiconductor Device
KR970003949A (en) Method for manufacturing storage electrode of semiconductor device
KR950010076A (en) DRAM cell manufacturing method of semiconductor device
KR970030817A (en) Capacitor Manufacturing Method of Semiconductor Device
KR960026741A (en) Capacitor Manufacturing Method of Semiconductor Device
KR920007235A (en) Method for manufacturing self-aligned contact of semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060220

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee