KR960001175B1 - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

Info

Publication number
KR960001175B1
KR960001175B1 KR1019870005761A KR870005761A KR960001175B1 KR 960001175 B1 KR960001175 B1 KR 960001175B1 KR 1019870005761 A KR1019870005761 A KR 1019870005761A KR 870005761 A KR870005761 A KR 870005761A KR 960001175 B1 KR960001175 B1 KR 960001175B1
Authority
KR
South Korea
Prior art keywords
film
semiconductor device
silicon
silicon oxide
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019870005761A
Other languages
English (en)
Korean (ko)
Other versions
KR880001048A (ko
Inventor
시게루 모리다
마사카즈 가쿠무
Original Assignee
가부시키가이샤 도시바
와타리 스기이치로
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바, 와타리 스기이치로 filed Critical 가부시키가이샤 도시바
Publication of KR880001048A publication Critical patent/KR880001048A/ko
Application granted granted Critical
Publication of KR960001175B1 publication Critical patent/KR960001175B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H10W10/00—
    • H10W10/01—
    • H10W10/0126—
    • H10W10/13—

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
KR1019870005761A 1986-06-09 1987-06-08 반도체장치의 제조방법 Expired - Fee Related KR960001175B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP133212 1986-06-09
JP61-133212 1986-06-09
JP61133212A JPS62290146A (ja) 1986-06-09 1986-06-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR880001048A KR880001048A (ko) 1988-03-31
KR960001175B1 true KR960001175B1 (ko) 1996-01-19

Family

ID=15099347

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870005761A Expired - Fee Related KR960001175B1 (ko) 1986-06-09 1987-06-08 반도체장치의 제조방법

Country Status (3)

Country Link
US (1) US4746625A (cg-RX-API-DMAC10.html)
JP (1) JPS62290146A (cg-RX-API-DMAC10.html)
KR (1) KR960001175B1 (cg-RX-API-DMAC10.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4968640A (en) * 1987-02-10 1990-11-06 Industrial Technology Research Institute Isolation structures for integrated circuits
US5019526A (en) * 1988-09-26 1991-05-28 Nippondenso Co., Ltd. Method of manufacturing a semiconductor device having a plurality of elements
US5059550A (en) * 1988-10-25 1991-10-22 Sharp Kabushiki Kaisha Method of forming an element isolating portion in a semiconductor device
JPH02162749A (ja) * 1988-12-15 1990-06-22 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0775243B2 (ja) * 1989-02-22 1995-08-09 株式会社東芝 半導体装置の製造方法
US5002898A (en) * 1989-10-19 1991-03-26 At&T Bell Laboratories Integrated-circuit device isolation
US5057463A (en) * 1990-02-28 1991-10-15 Sgs-Thomson Microelectronics, Inc. Thin oxide structure and method
US5039625A (en) * 1990-04-27 1991-08-13 Mcnc Maximum areal density recessed oxide isolation (MADROX) process
KR930011460B1 (ko) * 1991-01-22 1993-12-08 삼성전자 주식회사 반도체 장치의 소자분리 영역 형성방법
JP4035447B2 (ja) 2001-05-09 2008-01-23 新電元工業株式会社 半導体装置およびその製造方法
ITMI20012010A1 (it) * 2001-09-27 2003-03-27 Getters Spa Sistemi per la conversione di acqua in idrogeno e l'assorbimemnto di idrogeno in dispositivi elettronici e processo di produzione
EP2306508B1 (en) * 2009-09-29 2012-11-28 STMicroelectronics Srl Integrated device with raised LOCOS insulation regions and process for manufacturing such device
US8338888B2 (en) * 2009-09-29 2012-12-25 STMicroelectronicis S.r.l. Process for manufacturing an integrated device with “damascene” field insulation, and integrated device made by such process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4214946A (en) * 1979-02-21 1980-07-29 International Business Machines Corporation Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
JPS57207348A (en) * 1981-06-16 1982-12-20 Fujitsu Ltd Manufacture of semiconductor device
JPS5922344A (ja) * 1982-07-28 1984-02-04 Fujitsu Ltd 半導体装置の製造方法
JPS59227137A (ja) * 1983-06-08 1984-12-20 Nec Corp 半導体基板の製造方法
US4570325A (en) * 1983-12-16 1986-02-18 Kabushiki Kaisha Toshiba Manufacturing a field oxide region for a semiconductor device

Also Published As

Publication number Publication date
US4746625A (en) 1988-05-24
JPS62290146A (ja) 1987-12-17
KR880001048A (ko) 1988-03-31
JPH0565058B2 (cg-RX-API-DMAC10.html) 1993-09-16

Similar Documents

Publication Publication Date Title
KR100278729B1 (ko) 집적 회로에서의 전기적 분리 구조체 형성 방법
EP0113517B1 (en) Method for forming an isolation region
US3943542A (en) High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
KR960001175B1 (ko) 반도체장치의 제조방법
EP0055521A1 (en) Method of filling a groove in a semiconductor substrate
US4295266A (en) Method of manufacturing bulk CMOS integrated circuits
US5100830A (en) Method of manufacturing a semiconductor device
US4876214A (en) Method for fabricating an isolation region in a semiconductor substrate
US4497108A (en) Method for manufacturing semiconductor device by controlling thickness of insulating film at peripheral portion of element formation region
US4721687A (en) Method of increasing the thickness of a field oxide
JPH0628282B2 (ja) 半導体装置の製造方法
US4054989A (en) High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
KR100246691B1 (ko) 반도체 장치 제조 방법
EP0076147B1 (en) Method of producing a semiconductor device comprising an isolation region
KR0151267B1 (ko) 반도체장치의 제조방법
JPH08255828A (ja) 半導体装置およびその製造方法
JPH04280451A (ja) 半導体素子分離領域の製造方法
JPH10308448A (ja) 半導体デバイスの隔離膜及びその形成方法
KR940001813B1 (ko) 반도체장치 소자 분리방법 및 그 소자 분리영역을 갖는 반도체장치
KR930005237B1 (ko) 반도체장치의 소자분리막 제조방법
KR0161727B1 (ko) 반도체 소자의 소자분리방법
KR920001732B1 (ko) 반도체 장치 및 그 제조 방법
KR940003219B1 (ko) 반도체 메모리장치의 소자분리방법
JPH07321193A (ja) 半導体装置の製造方法
JPH0467648A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20021231

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20040120

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20040120

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000