KR950032089A - 방향족 디아조늄염 및 방사선-민감성 혼합물에서의 이의 용도 - Google Patents

방향족 디아조늄염 및 방사선-민감성 혼합물에서의 이의 용도 Download PDF

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KR950032089A
KR950032089A KR1019950010220A KR19950010220A KR950032089A KR 950032089 A KR950032089 A KR 950032089A KR 1019950010220 A KR1019950010220 A KR 1019950010220A KR 19950010220 A KR19950010220 A KR 19950010220A KR 950032089 A KR950032089 A KR 950032089A
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아이히호른 마티아스
부흐 게르하르트
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베른하르트 엠. 베크,카를-헤르만 메이어-둘호이어
훽스트 아크티엔게젤샤프트
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    • C07D295/00Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms
    • C07D295/04Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms
    • C07D295/12Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms substituted by singly or doubly bound nitrogen atoms
    • C07D295/135Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms substituted by singly or doubly bound nitrogen atoms with the ring nitrogen atoms and the substituent nitrogen atoms separated by carbocyclic rings or by carbon chains interrupted by carbocyclic rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C245/00Compounds containing chains of at least two nitrogen atoms with at least one nitrogen-to-nitrogen multiple bond
    • C07C245/20Diazonium compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C323/00Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
    • C07C323/23Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton
    • C07C323/46Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton having at least one of the nitrogen atoms, not being part of nitro or nitroso groups, further bound to other hetero atoms
    • C07C323/48Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton having at least one of the nitrogen atoms, not being part of nitro or nitroso groups, further bound to other hetero atoms to nitrogen atoms
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    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D209/00Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/56Ring systems containing three or more rings
    • C07D209/80[b, c]- or [b, d]-condensed
    • C07D209/82Carbazoles; Hydrogenated carbazoles
    • C07D209/88Carbazoles; Hydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03CPHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00Photosensitive materials
    • G03C1/52Compositions containing diazo compounds as photosensitive substances
    • G03C1/56Diazo sulfonates
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/016Diazonium salts or compounds
    • G03F7/0163Non ionic diazonium compounds, e.g. diazosulphonates; Precursors thereof, e.g. triazenes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/016Diazonium salts or compounds
    • G03F7/021Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

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Abstract

본 발명은 방향족 또는 헤테로방향족 모노-또는 비스-디아조늄 1,1,2,3,3,3-헥사플루오로프로판설포네이트에 관한 것이다. 이들은 방사선-민감성 기록 물질을 피복하기 위해 사용되는 포니티브-작용성 또는 네가티브-작용성 방사선-민감성 혼합물에 사용된다.

Description

방향족 디아조늄 염 및 방사선-민감성 혼합물에서의 이의 용도
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (18)

  1. 방향족 또는 헤테로방향족 모노-또는 비스-디아조늄 1,1,2,3,3,3-헥사플루오로프로판설포네이트.
  2. 비치환되거나, 할로겐 원자 또는 하이드록실, (C1-C4)알콕시, 페녹시, (C1-C4)알킬, 아미노, (C1-C4)알킬아미노, 디(C1-C4) 알킬아미노, (C1-C4) 하이드록시알킬아미노, 디(C1-C4) 하이드록시알킬아미노, (C1-C4)하이드록시알킬(C1-C4)알킬아미노, 피롤리디노, 피페리디노, 모르폴리노, 페닐아미노, 니트로, 페닐 또는 페닐아조, 페닐메르캅토 또는 벤조일 그룹(여기서, 벤조일 그룹은 (C1-C4)알킬, (C1-C|4)알콕시 또는 디아조늄 그룹으로 치환될 수 있고, 페닐메르캅토 그룹은 (C1-C4)알킬 또는 (C1-C4)알콕시 그룹으로 치환될 수 있다)으로 치환된 벤젠디아조늄 1,1,2,3,3,3-헥사플루오로프로판설포네이트 및 플루오렌디아조늄 1,1,2,3,3,3-헥사플루오로프로판설포네이트.
  3. 디-x-벤조푸란디아조늄 1,1,2,3,3,3-헥사플루오로프로판설포네이트, 디-x-벤조〔b,d〕티오펜디아조늄 1,1,2,3,3,3-헥사플루오로프로판설포네이트 또는 9-(C1-C4)알킬-x-카바졸디아조늄 1,1,2,3,3,3-헥사플루오로프로판설포네이트〔여기서, x는 위치 번호를 특정한다]
  4. 제1항 내지 제3항증 어느 한 항에 따르는 방향족 또는 헤테로방향족 디아조늄염인, 화학선에 노출될때 산을 형성하는 화합물(a), 및 포지티브-작용성 혼합물(positive-working mixture)의 경우, 방사선 또는 산에 노출될때 알칼리성 수용액 중의 용해도가 증가하는 화합물(b1) 또는 네가티브-작용성 혼합물(negative working mixture)의 경우, 산에 노출될때 알칼리성 수용액중의 용해도가 감소하는 화합물(b2)을 함유하는 방사선-민감성 혼합물.
  5. 제4항에 있어서, 물에는 불용성이나, 알칼리성 수용액에는 가용성이거나 적어도 팽윤성인 유기 중합체 결합제(c)를 추가로 함유하는 방사선-민감성 혼합물.
  6. 제4항에 있어서, 산에 노출될때 알칼리성 수용액 중의 용해도가 증가하는 화합물(b1)가 산-불안정 그룹 함유 중합체인 방사선-민감성 혼합물.
  7. 제6항에 있어서, 산-불안정 그룹 함유 중합체가 산-절단성 C-0-C결합하나 이상을 함유하고, 중합체인 방사선-민감성 혼합물.
  8. 제7항에 있어서, 산-불안정 그룹 함유 중합체가 방향족 환이 산-절단성 3급-부톡시카보닐옥시, 3급-부톡시 카보닐 또는 3급-부톡시 그룹으로 치환된 중합체인 방사선-민감성 혼합물.
  9. 제4항에 있어서, 화학선에 노출될때 알칼리성 수용액 중의 용해도가 증가하는 화합물(b1)가 o-퀴논 디아지드인 방사선-민감성 혼합물.
  10. 제9항에 있어서, 화학선에 노출될 때 알칼리성 수용액 중의 용해도가 증가하는 화합물(b1)가 o-나프토퀴논 디아지드인 방사선-민감성 혼합물.
  11. 제10항에 있어서, o-나프토퀴논 디아지드가 (1,2-나프토퀴논-2-디아지드)-4-또는 -5-설폰산과 페놀성 하이드록실 그룹을 함유하는 화합물과의 에스테르인 방사선-민감성 혼합물.
  12. 제11항에 있어서, o-나프토퀴논 디아지드가 (1,2-나프토퀴논-2-디아지드)-4-또는 -5-설폰산과 2 내지 6개의 페놀성 하이드록실 그룹을 함유하는 화합물과의 에스테르인 방사선-민감성 혼합물.
  13. 제4항에 있어서, 화합물(b2)가 산-가교결합성 그룹 2개 이상을 함유하는 방사선-민감성 혼합물.
  14. 제13항에 있어서, 화합물(b2)가 하이드록시메틸, 알콕시메틸 또는 옥시라닐메틸 그룹 중에서 선택된 2개 이상의 그룹을 함유하는 방사선-민감성 혼합물.
  15. 제13항 또는 제14항에 있어서, 화합물(b2)가 2개 이상의 N-하이드록시메틸, N-알콕시메틸 또는 N-아실옥시메틸 그룹을 함유하는 멜라민/포름알데하이드 또는 우레아/포름알데하이드 축합물인 방사선-민감성 혼합물.
  16. 제4항 내지 제12항중 어느 한 항에 있어서, 결합제(c)가 페놀성 하이드록실 그룹을 함유하거나 카복실그룹을 함유하는 중합체인 방사선-민감성 혼합물.
  17. 제16항에 있어서, 결합제(c)가 노볼락 또는 폴리하이드록시스티렌인 방사선-민감성 혼합물.
  18. 기재와, 제4항 내지 제17항 중의 어느 한 항에 따르는 방사선-민감성 혼합물로 이루어진 방사선-민감성 피복물을 갖는 기록 물질.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950010220A 1994-04-28 1995-04-28 방향족 디아조늄염 및 방사선-민감성 혼합물에서의 이의 용도 KR950032089A (ko)

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DEP4414897.6 1994-04-28
DE4414897A DE4414897A1 (de) 1994-04-28 1994-04-28 Aromatische Diazoniumsalze und deren Verwendung in strahlungsempfindlichen Gemischen

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DE59508748D1 (de) 2000-11-02
US5776652A (en) 1998-07-07
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JPH0853401A (ja) 1996-02-27
DE4414897A1 (de) 1995-11-02
EP0679635A1 (de) 1995-11-02

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