KR950032089A - 방향족 디아조늄염 및 방사선-민감성 혼합물에서의 이의 용도 - Google Patents
방향족 디아조늄염 및 방사선-민감성 혼합물에서의 이의 용도 Download PDFInfo
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- KR950032089A KR950032089A KR1019950010220A KR19950010220A KR950032089A KR 950032089 A KR950032089 A KR 950032089A KR 1019950010220 A KR1019950010220 A KR 1019950010220A KR 19950010220 A KR19950010220 A KR 19950010220A KR 950032089 A KR950032089 A KR 950032089A
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D295/00—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms
- C07D295/04—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms
- C07D295/12—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms substituted by singly or doubly bound nitrogen atoms
- C07D295/135—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms substituted by singly or doubly bound nitrogen atoms with the ring nitrogen atoms and the substituent nitrogen atoms separated by carbocyclic rings or by carbon chains interrupted by carbocyclic rings
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C245/00—Compounds containing chains of at least two nitrogen atoms with at least one nitrogen-to-nitrogen multiple bond
- C07C245/20—Diazonium compounds
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
- C07C323/23—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton
- C07C323/46—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton having at least one of the nitrogen atoms, not being part of nitro or nitroso groups, further bound to other hetero atoms
- C07C323/48—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton having at least one of the nitrogen atoms, not being part of nitro or nitroso groups, further bound to other hetero atoms to nitrogen atoms
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
- C07D209/88—Carbazoles; Hydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/52—Compositions containing diazo compounds as photosensitive substances
- G03C1/56—Diazo sulfonates
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/016—Diazonium salts or compounds
- G03F7/0163—Non ionic diazonium compounds, e.g. diazosulphonates; Precursors thereof, e.g. triazenes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/016—Diazonium salts or compounds
- G03F7/021—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Indole Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Printing Plates And Materials Therefor (AREA)
Abstract
본 발명은 방향족 또는 헤테로방향족 모노-또는 비스-디아조늄 1,1,2,3,3,3-헥사플루오로프로판설포네이트에 관한 것이다. 이들은 방사선-민감성 기록 물질을 피복하기 위해 사용되는 포니티브-작용성 또는 네가티브-작용성 방사선-민감성 혼합물에 사용된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (18)
- 방향족 또는 헤테로방향족 모노-또는 비스-디아조늄 1,1,2,3,3,3-헥사플루오로프로판설포네이트.
- 비치환되거나, 할로겐 원자 또는 하이드록실, (C1-C4)알콕시, 페녹시, (C1-C4)알킬, 아미노, (C1-C4)알킬아미노, 디(C1-C4) 알킬아미노, (C1-C4) 하이드록시알킬아미노, 디(C1-C4) 하이드록시알킬아미노, (C1-C4)하이드록시알킬(C1-C4)알킬아미노, 피롤리디노, 피페리디노, 모르폴리노, 페닐아미노, 니트로, 페닐 또는 페닐아조, 페닐메르캅토 또는 벤조일 그룹(여기서, 벤조일 그룹은 (C1-C4)알킬, (C1-C|4)알콕시 또는 디아조늄 그룹으로 치환될 수 있고, 페닐메르캅토 그룹은 (C1-C4)알킬 또는 (C1-C4)알콕시 그룹으로 치환될 수 있다)으로 치환된 벤젠디아조늄 1,1,2,3,3,3-헥사플루오로프로판설포네이트 및 플루오렌디아조늄 1,1,2,3,3,3-헥사플루오로프로판설포네이트.
- 디-x-벤조푸란디아조늄 1,1,2,3,3,3-헥사플루오로프로판설포네이트, 디-x-벤조〔b,d〕티오펜디아조늄 1,1,2,3,3,3-헥사플루오로프로판설포네이트 또는 9-(C1-C4)알킬-x-카바졸디아조늄 1,1,2,3,3,3-헥사플루오로프로판설포네이트〔여기서, x는 위치 번호를 특정한다]
- 제1항 내지 제3항증 어느 한 항에 따르는 방향족 또는 헤테로방향족 디아조늄염인, 화학선에 노출될때 산을 형성하는 화합물(a), 및 포지티브-작용성 혼합물(positive-working mixture)의 경우, 방사선 또는 산에 노출될때 알칼리성 수용액 중의 용해도가 증가하는 화합물(b1) 또는 네가티브-작용성 혼합물(negative working mixture)의 경우, 산에 노출될때 알칼리성 수용액중의 용해도가 감소하는 화합물(b2)을 함유하는 방사선-민감성 혼합물.
- 제4항에 있어서, 물에는 불용성이나, 알칼리성 수용액에는 가용성이거나 적어도 팽윤성인 유기 중합체 결합제(c)를 추가로 함유하는 방사선-민감성 혼합물.
- 제4항에 있어서, 산에 노출될때 알칼리성 수용액 중의 용해도가 증가하는 화합물(b1)가 산-불안정 그룹 함유 중합체인 방사선-민감성 혼합물.
- 제6항에 있어서, 산-불안정 그룹 함유 중합체가 산-절단성 C-0-C결합하나 이상을 함유하고, 중합체인 방사선-민감성 혼합물.
- 제7항에 있어서, 산-불안정 그룹 함유 중합체가 방향족 환이 산-절단성 3급-부톡시카보닐옥시, 3급-부톡시 카보닐 또는 3급-부톡시 그룹으로 치환된 중합체인 방사선-민감성 혼합물.
- 제4항에 있어서, 화학선에 노출될때 알칼리성 수용액 중의 용해도가 증가하는 화합물(b1)가 o-퀴논 디아지드인 방사선-민감성 혼합물.
- 제9항에 있어서, 화학선에 노출될 때 알칼리성 수용액 중의 용해도가 증가하는 화합물(b1)가 o-나프토퀴논 디아지드인 방사선-민감성 혼합물.
- 제10항에 있어서, o-나프토퀴논 디아지드가 (1,2-나프토퀴논-2-디아지드)-4-또는 -5-설폰산과 페놀성 하이드록실 그룹을 함유하는 화합물과의 에스테르인 방사선-민감성 혼합물.
- 제11항에 있어서, o-나프토퀴논 디아지드가 (1,2-나프토퀴논-2-디아지드)-4-또는 -5-설폰산과 2 내지 6개의 페놀성 하이드록실 그룹을 함유하는 화합물과의 에스테르인 방사선-민감성 혼합물.
- 제4항에 있어서, 화합물(b2)가 산-가교결합성 그룹 2개 이상을 함유하는 방사선-민감성 혼합물.
- 제13항에 있어서, 화합물(b2)가 하이드록시메틸, 알콕시메틸 또는 옥시라닐메틸 그룹 중에서 선택된 2개 이상의 그룹을 함유하는 방사선-민감성 혼합물.
- 제13항 또는 제14항에 있어서, 화합물(b2)가 2개 이상의 N-하이드록시메틸, N-알콕시메틸 또는 N-아실옥시메틸 그룹을 함유하는 멜라민/포름알데하이드 또는 우레아/포름알데하이드 축합물인 방사선-민감성 혼합물.
- 제4항 내지 제12항중 어느 한 항에 있어서, 결합제(c)가 페놀성 하이드록실 그룹을 함유하거나 카복실그룹을 함유하는 중합체인 방사선-민감성 혼합물.
- 제16항에 있어서, 결합제(c)가 노볼락 또는 폴리하이드록시스티렌인 방사선-민감성 혼합물.
- 기재와, 제4항 내지 제17항 중의 어느 한 항에 따르는 방사선-민감성 혼합물로 이루어진 방사선-민감성 피복물을 갖는 기록 물질.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEP4414897.6 | 1994-04-28 | ||
DE4414897A DE4414897A1 (de) | 1994-04-28 | 1994-04-28 | Aromatische Diazoniumsalze und deren Verwendung in strahlungsempfindlichen Gemischen |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950032089A true KR950032089A (ko) | 1995-12-20 |
Family
ID=6516712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950010220A KR950032089A (ko) | 1994-04-28 | 1995-04-28 | 방향족 디아조늄염 및 방사선-민감성 혼합물에서의 이의 용도 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5776652A (ko) |
EP (1) | EP0679635B1 (ko) |
JP (1) | JPH0853401A (ko) |
KR (1) | KR950032089A (ko) |
BR (1) | BR9501829A (ko) |
DE (2) | DE4414897A1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3108376B2 (ja) * | 1996-07-04 | 2000-11-13 | 沖電気工業株式会社 | 感熱記録媒体用のジアゾニウム塩 |
TWI250379B (en) * | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
JP4494060B2 (ja) * | 2004-03-30 | 2010-06-30 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
EP1705519B1 (en) * | 2005-03-20 | 2016-07-06 | Rohm and Haas Electronic Materials, L.L.C. | Method of treating a microelectronic substrate |
US8889727B2 (en) | 2011-01-30 | 2014-11-18 | Meiji Seika Pharma Co., Ltd. | Topical antifungal agent |
MX2015001416A (es) | 2012-07-30 | 2015-05-08 | Meiji Seika Pharma Co Ltd | Agente liquido topico para el tratamiento de la dermatofitosis. |
TW201410273A (zh) | 2012-07-30 | 2014-03-16 | Meiji Seika Pharma Co Ltd | 抗白癬菌症貼附劑 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1447963B2 (de) * | 1965-11-24 | 1972-09-07 | KaIIe AG, 6202 Wiesbaden Biebnch | Verfahren zur herstellung einer offsetdruckform aus einem vorsensibilisierten druckplattenmaterial |
US3679419A (en) * | 1969-05-20 | 1972-07-25 | Azoplate Corp | Light-sensitive diazo condensate containing reproduction material |
US3849392A (en) * | 1969-05-20 | 1974-11-19 | Kalle Ag | Process for the production of polycondensation products of aromatic diazonium compounds |
CH621416A5 (ko) * | 1975-03-27 | 1981-01-30 | Hoechst Ag | |
DE2641099A1 (de) * | 1976-09-13 | 1978-03-16 | Hoechst Ag | Lichtempfindliche kopierschicht |
DE2718254C3 (de) * | 1977-04-25 | 1980-04-10 | Hoechst Ag, 6000 Frankfurt | Strahlungsempfindliche Kopiermasse |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
DE3634371A1 (de) * | 1986-10-09 | 1988-04-21 | Hoechst Ag | Lichtempfindliches gemisch und hieraus hergestelltes lichtempfindliches kopiermaterial |
DE3711264A1 (de) * | 1987-04-03 | 1988-10-13 | Hoechst Ag | Lichtempfindliches gemisch und hieraus hergestelltes lichtempfindliches kopiermaterial |
JP2768692B2 (ja) * | 1988-08-01 | 1998-06-25 | 株式会社日立製作所 | 感放射線組成物及びパターン形成方法 |
DE4112968A1 (de) * | 1991-04-20 | 1992-10-22 | Hoechst Ag | Saeurespaltbare verbindungen, diese enthaltendes positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
DE4120172A1 (de) * | 1991-06-19 | 1992-12-24 | Hoechst Ag | Strahlungsempfindliches gemisch, das als bindemittel neue polymere mit einheiten aus amiden von (alpha),(beta)-ungesaettigten carbonsaeuren enthaelt |
JPH0561191A (ja) * | 1991-09-04 | 1993-03-12 | Fuji Photo Film Co Ltd | 感光性平版印刷版 |
-
1994
- 1994-04-28 DE DE4414897A patent/DE4414897A1/de not_active Withdrawn
-
1995
- 1995-04-18 EP EP95105726A patent/EP0679635B1/de not_active Expired - Lifetime
- 1995-04-18 DE DE59508748T patent/DE59508748D1/de not_active Expired - Fee Related
- 1995-04-27 BR BR9501829A patent/BR9501829A/pt not_active Application Discontinuation
- 1995-04-28 JP JP7106436A patent/JPH0853401A/ja active Pending
- 1995-04-28 KR KR1019950010220A patent/KR950032089A/ko not_active Application Discontinuation
-
1997
- 1997-10-14 US US08/949,777 patent/US5776652A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
BR9501829A (pt) | 1996-04-30 |
DE59508748D1 (de) | 2000-11-02 |
US5776652A (en) | 1998-07-07 |
EP0679635B1 (de) | 2000-09-27 |
JPH0853401A (ja) | 1996-02-27 |
DE4414897A1 (de) | 1995-11-02 |
EP0679635A1 (de) | 1995-11-02 |
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