KR950032001A - 금속 접합 세라믹 물질 또는 소자 생산 방법, 그 방법에 의해 생산된 금속 접합 세라믹 물질 또는 소자, 그 물질로 제조된 전자회로 기판 - Google Patents

금속 접합 세라믹 물질 또는 소자 생산 방법, 그 방법에 의해 생산된 금속 접합 세라믹 물질 또는 소자, 그 물질로 제조된 전자회로 기판 Download PDF

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KR950032001A
KR950032001A KR1019950008428A KR19950008428A KR950032001A KR 950032001 A KR950032001 A KR 950032001A KR 1019950008428 A KR1019950008428 A KR 1019950008428A KR 19950008428 A KR19950008428 A KR 19950008428A KR 950032001 A KR950032001 A KR 950032001A
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melt
ceramic
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샤오 샨 닝
조주 나가따
마사미 사꾸라바
도시까즈 다나까
마시미 기무라
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도와고오교 가부시끼가이샤
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Abstract

세라믹(2)는 도입구의 가이드(6a)를 통해서 도가니(7)에 연속적으로 공급된다. 상기 도가니(7)내에서 융해금속(1)에 의해 완전히 웨트된 후에, 상기 세라믹 부재(2)는 출구측의 다이(6B)로 들어가고, 이로부터 각 세라믹 부재(2)의 표면에 접합되는 금속 부분을 가지는 세라믹 부재(2)가 연속적으로 돌출된다. 이 공정은, 낮은 비용으로 양호한 특성을 가지는 다양한 형태의 금속 접합 세라믹(MBC) 물질 또는 소자(5)를 제조할 수 있게 하고, 또한 상기 MBC물질(5)로 부터 전자회로 기판이 제조될 수 있다.

Description

금속 접합 세라믹 물질 또는 소자 생산 방법, 그 방법에 의해 생산된 금속 접합 세라믹 물질 또는 소자, 그 물질로 제조된 전자회로 기판
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 MBC 물질 또는 소자를 형성하는 실시예 1-6에 사용되는 장치의 개략 단면도, 제2도는 본 발명의 기본 개념을 나타내는 다이아그램, 제3도는 MBC 물질을 제조하는 실시예 1에 사용되는 다이의 단면부를 나타내는 부분도.

Claims (9)

  1. 세라믹 부재(2)의 적어도 일부분에 접합되는 금속을 가지는 금속 접합 세라믹(MBC) 물질 또는 소자(5)를 생산하는 방법으로서, 상기 세라믹 부재(2)를 상기 금속 융해물(1)과 접촉하면서 이동시켜 상기 세라믹 부재(2)가 상기 융해물에 의해 웨트되는 단계와, 상기 융해물을 상기 세라믹 부재(2)의 표면상에서 경화시켜 상기 부재(2)에 접합되도록 상기 융해물을 냉각시키는 단계를 구비하는 MBC 물질 또는 소자를 생산하는 방법.
  2. 세라믹 부재(2)의 적어도 일부분에 접합되는 금속을 가지는 MBC 물질 또는 소자(5)를 생산하는 방법으로서, 금속에 접합되는 상기 세라믹 부재(2)의 일부분이 금속 융해물(1)에 접촉하면서 상기 금속 융해물(1)에 의해 웨트되도록 상기 세라믹 부재(2)를 이동시키는 단계와, 상기 금속 융해물(1) 또는 그의 일부분을 상기 세라믹 부재(2)의 선택 영역에서 경화시켜 소정 형태의 금속 부분을 형성시키는 단계를 구비하는 MBC 물질 또는 소자를 생산하는 방법.
  3. 세라믹 부재(2)의 적어도 일부분에 접합되는 금속을 가지는 MBC 물질 또는 소자를 생산하는 방법으로서, 상기 세라믹 부재(2)를 금속 융해물(1)에 연속적으로 공급하는 단계와, 상기 금속에 접합되는 상기 세라믹 부재(2)의 일부분이 상기 금속융해물(1)에 접촉하면서 상기 금속 융해물(1)에 의해 의해 웨트되도록 상기 세라믹 부재(2)를 이동시키는 단계와, 상기 세라믹 부재(2)를 복구시켜 상기 금속 융해물(1)의 일부분을 상기 세라믹 부재(2)의 선택 영역에서 경화하여 소정 형태의 금속 부분을 형성시키는 단계를 구비하는 MBC 물질 또는 소자를 생산하는 방법.
  4. 세라믹 부재(2)의 적어도 일부분에 접합되는 금속을 가지는 MBC 물질 또는 소자(5)를 생산하는 방법으로서, 상기 금속에 접합되는 세라믹 부재(2)의 일부분을 그것의 일측으로부터 연속적으로 상기 금속 융해물(1)로 공급시키는 단계와, 상기 세라믹 부재(2)가 상기 금속 융해물에 의해 완전히 웨트되도록 하는 단계와, 상기 세라믹 부재(2)를 다이(6B)를 통해 반대방향으로 이동시켜 상기 금속 융해물의 일부분을 상기 세라믹 부재(2)의 선택 영역에서 경화시켜 소정 형태의 금속 부분을 형성하는 단계를 구비하는 MBC 물질 또는 소자 생산 방법.
  5. 세라믹 부재(2)의 적어도 일부분에 접합되는 금속을 가지는 MBC 물질 또는 소자(5)를 생산하는 방법으로서, 상기 세라믹 부재(2)의 일부분에 임시로 접합되는 금속을 가지는 MBC 부재의 세라믹 부분이 상기 접합되는 금속 보다 더 낮은 융점을 가지는 접합 금속 융해물로 일측으로 부터 공급되는 단계와, 상기 MBC 부재를 다이(6B)를 통해 반대 방향으로 이동시켜 저융점 금속 부분을 상기 접합된 고융점 금속을 가지는 상기 MBC 부재의 선택영역에서 경화시켜, 소정 형태의 저 융점 금속 부분을 형성하는 단계를 구비하는 MBC 물질 또는 소자를 생산하는 방법.
  6. 제1항 내지 제5항중 어느 한 항에 있어서, 상기 세라믹부재 또는 부분이 산화물, 질화물 및 탄화물로 만들어진 것을 특징으로 하는 MBC 물질 또는 소자를 생산하는 방법.
  7. 제1항 내지 제5항중 어느 한 항에 있어서, 상기 금속이 알루미늄, 구리, 철, 니켈, 은 또는 금이나 이물질들중의 하나에 기초한 함금인 것을 특징으로 하는 MBC 물질 또는 소자를 생산하는 방법.
  8. 제1항 내지 제5항중 어느 한 항에 기재된 방법에 의해 세라믹 기판상에 형성된 금속 플레이트를 가지는 MBC 플레이트 부재.
  9. 제8항 기재의 MBC 플레이트 부재의 금속 플레이트를 에칭함으로써 형성된 소정의 회로 패턴을 가지는 MBC 전자회로 기판.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950008428A 1994-04-11 1995-04-11 금속 접합 세라믹 물질 또는 소자 생산 방법, 그 방법에 의해 생산된 금속 접합 세라믹 물질 또는 소자, 그 물질로 제조된 전자회로 기판 KR100201887B1 (ko)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140096074A (ko) * 2012-02-15 2014-08-04 쿠라미크 엘렉트로닉스 게엠베하 금속-세라믹 기판 및 그러한 금속-세라믹 기판을 제조하는 방법

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0746022B1 (en) * 1995-05-30 1999-08-11 Motorola, Inc. Hybrid multi-chip module and method of fabricating
AT405039B (de) * 1996-02-08 1999-04-26 Electrovac Verbundbauteil
DE19735531A1 (de) * 1997-08-16 1999-02-18 Abb Research Ltd Leistungshalbleitermodul mit in Submodulen integrierten Kühlern
JP4756200B2 (ja) 2000-09-04 2011-08-24 Dowaメタルテック株式会社 金属セラミックス回路基板
JP4434545B2 (ja) 2001-03-01 2010-03-17 Dowaホールディングス株式会社 半導体実装用絶縁基板及びパワーモジュール
JP4692708B2 (ja) 2002-03-15 2011-06-01 Dowaメタルテック株式会社 セラミックス回路基板およびパワーモジュール
JP4324704B2 (ja) 2002-09-13 2009-09-02 Dowaメタルテック株式会社 金属−セラミックス複合部材の製造装置、製造用鋳型、並びに製造方法
JP4028452B2 (ja) * 2003-08-27 2007-12-26 Dowaホールディングス株式会社 電子部品搭載基板およびその製造方法
JP4821013B2 (ja) * 2003-09-29 2011-11-24 Dowaメタルテック株式会社 アルミニウム−セラミックス接合基板およびその製造方法
JP4496404B2 (ja) * 2003-10-10 2010-07-07 Dowaメタルテック株式会社 金属−セラミックス接合基板およびその製造方法
JP4543279B2 (ja) * 2004-03-31 2010-09-15 Dowaメタルテック株式会社 アルミニウム接合部材の製造方法
JP5467407B2 (ja) * 2007-10-22 2014-04-09 Dowaメタルテック株式会社 アルミニウム−セラミックス接合体
JP4862196B2 (ja) * 2008-07-14 2012-01-25 Dowaメタルテック株式会社 金属セラミックス回路基板の製造方法
CN103524148B (zh) * 2009-04-30 2015-10-28 清华大学 一种表面金属化陶瓷的制造方法
CN101538166B (zh) * 2009-04-30 2014-01-29 清华大学 陶瓷和铝或铝合金的连接方法
US9061943B2 (en) * 2009-04-30 2015-06-23 Tsinghua University Method for metallizing ceramic surface and method for connecting ceramic with aluminum
US20100314790A1 (en) * 2009-06-12 2010-12-16 Stansberry Peter G Highly Oriented Graphite Product
FR2969402B1 (fr) * 2010-12-17 2013-02-15 Fibercryst Module a gain laser et methode de fabrication d'un tel module
DE102011103746A1 (de) 2011-05-31 2012-12-06 Ixys Semiconductor Gmbh Verfahren zum Fügen von Metall-Keramik-Substraten an Metallkörpern
DE102012103786B4 (de) * 2012-04-30 2017-05-18 Rogers Germany Gmbh Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates
JP6233973B2 (ja) * 2014-03-31 2017-11-22 Dowaメタルテック株式会社 金属−セラミックス回路基板の製造方法
FR3026845B1 (fr) * 2014-10-07 2018-11-09 Constellium Issoire Procede de mouillage d'une sonotrode
JP2016048789A (ja) * 2015-11-05 2016-04-07 Dowaホールディングス株式会社 アルミニウム−セラミックス接合体の製造方法
CN108257922A (zh) * 2016-12-29 2018-07-06 比亚迪股份有限公司 一种散热基板及其制备方法和应用以及电子元器件
JP7202213B2 (ja) * 2019-02-22 2023-01-11 Dowaメタルテック株式会社 金属-セラミックス接合基板およびその製造方法
JP7480533B2 (ja) * 2020-03-10 2024-05-10 東ソー株式会社 Cr-Si系焼結体
JP2021165220A (ja) * 2020-04-08 2021-10-14 住友金属鉱山シポレックス株式会社 軽量気泡コンクリートの製造方法
CN112238587B (zh) * 2020-08-26 2023-03-14 山东高速交通装备有限公司 一种复合材料组合梁挤出成型设备
CN113443621A (zh) * 2021-07-23 2021-09-28 哈尔滨六方新材料科技有限公司 一种镁基复合材料中纳米碳材料的回收方法
CN118080821B (zh) * 2024-04-23 2024-07-09 广州众山精密科技有限公司 一种铝液连铸制备的铜铝复合板料及其工艺

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2109254A5 (en) * 1970-10-08 1972-05-26 Inst Materia Cermet prodn - by melt impregnation of a preheated porous ceramic body
US4104417A (en) * 1973-03-12 1978-08-01 Union Carbide Corporation Method of chemically bonding aluminum to carbon substrates via monocarbides
US3994430A (en) * 1975-07-30 1976-11-30 General Electric Company Direct bonding of metals to ceramics and metals
US4129243A (en) * 1975-07-30 1978-12-12 General Electric Company Double side cooled, pressure mounted semiconductor package and process for the manufacture thereof
US4409278A (en) * 1981-04-16 1983-10-11 General Electric Company Blister-free direct bonding of metals to ceramics and metals
JPS58138061A (ja) * 1982-02-10 1983-08-16 Sumitomo Electric Ind Ltd Ic用基板
DE3376829D1 (en) * 1982-06-29 1988-07-07 Toshiba Kk Method for directly bonding ceramic and metal members and laminated body of the same
JPS59121890A (ja) 1982-12-28 1984-07-14 株式会社東芝 セラミツクスと金属との接合体
JPS6318648A (ja) * 1986-07-11 1988-01-26 Toshiba Corp 窒化アルミニウム回路基板
JPS63250022A (ja) * 1987-04-03 1988-10-17 Sumitomo Electric Ind Ltd 超電導導体の製造方法
JPS649884A (en) * 1987-05-30 1989-01-13 Ikuo Okamoto Insert ceramics
DE3804124A1 (de) * 1988-02-11 1989-08-17 Htk Ges Fuer Hochtemperaturker Verfahren zum herstellen eines gegenstands aus siliziumkarbid-keramik
JPH0676266B2 (ja) * 1988-07-13 1994-09-28 日本碍子株式会社 酸化物超電導焼結体およびその製造方法
JPH0393687A (ja) 1989-09-06 1991-04-18 Toshiba Corp 窒化アルミニウム基板の製造方法
JP2658435B2 (ja) 1989-10-09 1997-09-30 三菱マテリアル株式会社 半導体装置用軽量基板
FR2655334B1 (fr) * 1989-12-06 1992-02-21 Poudres & Explosifs Ste Nale Procede de preparation de chlorures d'acides carboxyliques chlores.
JP2689685B2 (ja) 1990-05-02 1997-12-10 三菱マテリアル株式会社 半導体装置用軽量基板
JP2689687B2 (ja) 1990-05-11 1997-12-10 三菱マテリアル株式会社 Ic実装用基板
US5213877A (en) * 1991-05-02 1993-05-25 Mitsubishi Materials Corporation Ceramic substrate used for fabricating electric or electronic circuit
JPH04355211A (ja) 1991-05-31 1992-12-09 Matsushita Electric Ind Co Ltd 磁気ヘッドおよびその製造方法
JPH075758A (ja) * 1993-06-16 1995-01-10 Ricoh Co Ltd 現像装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140096074A (ko) * 2012-02-15 2014-08-04 쿠라미크 엘렉트로닉스 게엠베하 금속-세라믹 기판 및 그러한 금속-세라믹 기판을 제조하는 방법

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JP2918191B2 (ja) 1999-07-12
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JPH07276035A (ja) 1995-10-24
MY114268A (en) 2002-09-30
EP0676800B1 (en) 2002-12-18
EP1243569A2 (en) 2002-09-25
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CN1246902C (zh) 2006-03-22
EP0676800A2 (en) 1995-10-11
EP0676800A3 (en) 1997-01-15

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