KR950021687A - 고밀도의 판독 전용 데이타 기억 매체 - Google Patents
고밀도의 판독 전용 데이타 기억 매체 Download PDFInfo
- Publication number
- KR950021687A KR950021687A KR1019940033214A KR19940033214A KR950021687A KR 950021687 A KR950021687 A KR 950021687A KR 1019940033214 A KR1019940033214 A KR 1019940033214A KR 19940033214 A KR19940033214 A KR 19940033214A KR 950021687 A KR950021687 A KR 950021687A
- Authority
- KR
- South Korea
- Prior art keywords
- conductive
- semiconductor
- strip
- strips
- polarity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000013500 data storage Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract 6
- 238000010884 ion-beam technique Methods 0.000 claims abstract 4
- 230000005669 field effect Effects 0.000 claims abstract 2
- 239000004020 conductor Substances 0.000 claims 7
- 238000000034 method Methods 0.000 claims 5
- 239000002019 doping agent Substances 0.000 claims 2
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/40—ROM only having the source region and drain region on different levels, e.g. vertical channel
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16427893A | 1993-12-09 | 1993-12-09 | |
| US164,278 | 1993-12-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR950021687A true KR950021687A (ko) | 1995-07-26 |
Family
ID=22593770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940033214A Withdrawn KR950021687A (ko) | 1993-12-09 | 1994-12-08 | 고밀도의 판독 전용 데이타 기억 매체 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0657893A3 (cg-RX-API-DMAC7.html) |
| JP (1) | JPH07202137A (cg-RX-API-DMAC7.html) |
| KR (1) | KR950021687A (cg-RX-API-DMAC7.html) |
| CA (1) | CA2117933A1 (cg-RX-API-DMAC7.html) |
| TW (1) | TW288204B (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100419131B1 (ko) * | 2000-03-28 | 2004-02-18 | 미쓰비시덴키 가부시키가이샤 | 차량용 교류발전기의 고정자 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5869373A (en) * | 1997-03-27 | 1999-02-09 | United Microelectronics Corp. | Nand-structured and amorphous silicon based read-only memory device and method of fabricating the same |
| DE10348954B3 (de) * | 2003-10-18 | 2005-01-05 | Clariant Gmbh | Verfahren zur Herstellung von Beschichtungsformulierungen für wasser- und ölabweisende Beschichtungen |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56150859A (en) * | 1980-04-25 | 1981-11-21 | Hitachi Ltd | Semiconductor rom device |
-
1994
- 1994-10-12 TW TW083109442A patent/TW288204B/zh active
- 1994-10-12 CA CA002117933A patent/CA2117933A1/en not_active Abandoned
- 1994-11-30 EP EP94308848A patent/EP0657893A3/en not_active Withdrawn
- 1994-12-08 KR KR1019940033214A patent/KR950021687A/ko not_active Withdrawn
- 1994-12-09 JP JP6331012A patent/JPH07202137A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100419131B1 (ko) * | 2000-03-28 | 2004-02-18 | 미쓰비시덴키 가부시키가이샤 | 차량용 교류발전기의 고정자 |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2117933A1 (en) | 1995-06-10 |
| EP0657893A3 (en) | 1995-11-22 |
| EP0657893A2 (en) | 1995-06-14 |
| TW288204B (cg-RX-API-DMAC7.html) | 1996-10-11 |
| JPH07202137A (ja) | 1995-08-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19941208 |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |