KR950021182A - Method of Cleaning Semiconductor Devices - Google Patents

Method of Cleaning Semiconductor Devices Download PDF

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Publication number
KR950021182A
KR950021182A KR1019930029776A KR930029776A KR950021182A KR 950021182 A KR950021182 A KR 950021182A KR 1019930029776 A KR1019930029776 A KR 1019930029776A KR 930029776 A KR930029776 A KR 930029776A KR 950021182 A KR950021182 A KR 950021182A
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KR
South Korea
Prior art keywords
cleaning
semiconductor device
oxide film
pure
semiconductor devices
Prior art date
Application number
KR1019930029776A
Other languages
Korean (ko)
Inventor
이완기
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930029776A priority Critical patent/KR950021182A/en
Publication of KR950021182A publication Critical patent/KR950021182A/en

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 반도체 소자의 세정방법에 관한 것으로, 순수 DI 속에서 성장하는 자연 산화막을 제거하기 위하여 순수 DI로 세정하는 동안 일정량의무수(Anhydros) HF를 도시에 흘려주므로써 자연산화막속의 불순물이 제거되어 반도체 소자의 특성이 개선 되도록 한 반도체 소자의 세정방법에 관해 기술된다.The present invention relates to a method for cleaning a semiconductor device, in order to remove a natural oxide film growing in pure DI, by removing a certain amount of anhydrous HF flowing in the city during cleaning with pure DI to remove impurities in the natural oxide film A cleaning method of a semiconductor device in which the characteristics of the semiconductor device are improved is described.

Description

반도체 소자의 세정방법Method of Cleaning Semiconductor Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 반도체 소자의 세정방법을 설명하기 위한 세정 장치의 구조도.2 is a structural diagram of a cleaning device for explaining a method for cleaning a semiconductor device according to the present invention.

Claims (1)

반도체 소자의 세정방법에 있어서, 반도체 소자의 제조공정중에 생성되는 자연산화막을 제거하기 위해 자연 산화막이 생성된 웨이퍼를 세척욕조(4)내에서 순수DI에 의해 세정하면서 무수 HF를 동시에 공급하여 무수 HF에 의해 제거된 자연 산화막이 순수 DI와 함께 세척욕조(4) 외부로 방출되도록 하는 것을 특징으로 하는 반도체 소자의 세정방법.In the method of cleaning a semiconductor device, anhydrous HF is simultaneously supplied by simultaneously supplying anhydrous HF while washing the wafer on which the native oxide film is generated by pure DI in the cleaning bath 4 in order to remove the native oxide film generated during the manufacturing process of the semiconductor device. The method of cleaning a semiconductor device, characterized in that the natural oxide film removed by the discharge with the pure DI to the outside of the washing bath (4). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930029776A 1993-12-27 1993-12-27 Method of Cleaning Semiconductor Devices KR950021182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930029776A KR950021182A (en) 1993-12-27 1993-12-27 Method of Cleaning Semiconductor Devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930029776A KR950021182A (en) 1993-12-27 1993-12-27 Method of Cleaning Semiconductor Devices

Publications (1)

Publication Number Publication Date
KR950021182A true KR950021182A (en) 1995-07-26

Family

ID=66850881

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930029776A KR950021182A (en) 1993-12-27 1993-12-27 Method of Cleaning Semiconductor Devices

Country Status (1)

Country Link
KR (1) KR950021182A (en)

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