KR950013392B1 - 반도체기억장치 및 그 독출, 기록, 동작방법 - Google Patents

반도체기억장치 및 그 독출, 기록, 동작방법 Download PDF

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Publication number
KR950013392B1
KR950013392B1 KR1019910009455A KR910009455A KR950013392B1 KR 950013392 B1 KR950013392 B1 KR 950013392B1 KR 1019910009455 A KR1019910009455 A KR 1019910009455A KR 910009455 A KR910009455 A KR 910009455A KR 950013392 B1 KR950013392 B1 KR 950013392B1
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South Korea
Prior art keywords
line
lines
coupled
memory device
semiconductor memory
Prior art date
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Expired - Lifetime
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KR1019910009455A
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English (en)
Korean (ko)
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KR920001549A (ko
Inventor
가즈히데 아베
히로시 도요다
고우지 야마카와
모토마사 이마이
야스지 사쿠이
Original Assignee
가부시키가이샤 도시바
아오이 죠이치
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Priority claimed from JP14856190A external-priority patent/JP3156971B2/ja
Priority claimed from JP2184209A external-priority patent/JPH0478098A/ja
Application filed by 가부시키가이샤 도시바, 아오이 죠이치 filed Critical 가부시키가이샤 도시바
Publication of KR920001549A publication Critical patent/KR920001549A/ko
Application granted granted Critical
Publication of KR950013392B1 publication Critical patent/KR950013392B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/04—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using capacitive elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR1019910009455A 1990-06-08 1991-06-08 반도체기억장치 및 그 독출, 기록, 동작방법 Expired - Lifetime KR950013392B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP14856190A JP3156971B2 (ja) 1990-06-08 1990-06-08 半導体記憶装置、半導体記憶装置の読み出し方法、及び半導体記憶装置の書き込み方法
JP1990148561 1990-06-08
JP2-148561 1990-06-08
JP2184209A JPH0478098A (ja) 1990-07-13 1990-07-13 半導体記憶装置の動作方法
JP2-184209 1990-07-13

Publications (2)

Publication Number Publication Date
KR920001549A KR920001549A (ko) 1992-01-30
KR950013392B1 true KR950013392B1 (ko) 1995-11-08

Family

ID=26478711

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910009455A Expired - Lifetime KR950013392B1 (ko) 1990-06-08 1991-06-08 반도체기억장치 및 그 독출, 기록, 동작방법

Country Status (3)

Country Link
US (1) US5400275A (https=)
KR (1) KR950013392B1 (https=)
DE (1) DE4118847A1 (https=)

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KR100297874B1 (ko) * 1997-09-08 2001-10-24 윤종용 강유전체랜덤액세스메모리장치
KR100247934B1 (ko) 1997-10-07 2000-03-15 윤종용 강유전체 램 장치 및 그 제조방법
US5956266A (en) * 1997-11-14 1999-09-21 Ramtron International Corporation Reference cell for a 1T/1C ferroelectric memory
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US5978251A (en) * 1997-11-14 1999-11-02 Ramtron International Corporation Plate line driver circuit for a 1T/1C ferroelectric memory
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US5986919A (en) * 1997-11-14 1999-11-16 Ramtron International Corporation Reference cell configuration for a 1T/1C ferroelectric memory
US6028783A (en) 1997-11-14 2000-02-22 Ramtron International Corporation Memory cell configuration for a 1T/1C ferroelectric memory
US6002634A (en) * 1997-11-14 1999-12-14 Ramtron International Corporation Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory
US5969980A (en) * 1997-11-14 1999-10-19 Ramtron International Corporation Sense amplifier configuration for a 1T/1C ferroelectric memory
US20050122765A1 (en) * 1997-11-14 2005-06-09 Allen Judith E. Reference cell configuration for a 1T/1C ferroelectric memory
JP3487753B2 (ja) * 1998-02-24 2004-01-19 シャープ株式会社 半導体記憶装置
DE19830569C1 (de) * 1998-07-08 1999-11-18 Siemens Ag FeRAM-Anordnung
DE19844479C1 (de) * 1998-09-28 2000-04-13 Siemens Ag Integrierter Speicher mit einem differentiellen Leseverstärker
KR100281127B1 (ko) * 1998-11-19 2001-03-02 김영환 Nand형 비휘발성 강유전체 메모리 셀 및 그를 이용한 비휘발성 강유전체 메모리 장치
US6330636B1 (en) 1999-01-29 2001-12-11 Enhanced Memory Systems, Inc. Double data rate synchronous dynamic random access memory device incorporating a static RAM cache per memory bank
DE19915081C2 (de) * 1999-04-01 2001-10-18 Infineon Technologies Ag Integrierter Speicher, dessen Speicherzellen mit Plattenleitungen verbunden sind
US6201730B1 (en) * 1999-06-01 2001-03-13 Infineon Technologies North America Corp. Sensing of memory cell via a plateline
US6137711A (en) * 1999-06-17 2000-10-24 Agilent Technologies Inc. Ferroelectric random access memory device including shared bit lines and fragmented plate lines
US6275408B1 (en) * 1999-06-30 2001-08-14 Texas Instruments Incorporated Ferroelectric memory and method
DE19944036C2 (de) 1999-09-14 2003-04-17 Infineon Technologies Ag Integrierter Speicher mit wenigstens zwei Plattensegmenten
KR100417824B1 (ko) * 1999-12-23 2004-02-05 엘지전자 주식회사 코드분할다중접속 패킷 데이터 시스템에서의 채널 동적 할당 방법
US6226216B1 (en) * 2000-01-21 2001-05-01 Intel Corporation Sectional column activated memory
JP3784229B2 (ja) 2000-01-21 2006-06-07 シャープ株式会社 不揮発性半導体記憶装置およびそれを用いたシステムｌｓｉ
DE10008243B4 (de) * 2000-02-23 2005-09-22 Infineon Technologies Ag Integrierter Speicher mit Plattenleitungssegmenten
US6335899B1 (en) * 2000-04-19 2002-01-01 Lsi Logic Corporation Compensation capacitance for minimizing bit line coupling in multiport memory
US6566698B2 (en) * 2000-05-26 2003-05-20 Sony Corporation Ferroelectric-type nonvolatile semiconductor memory and operation method thereof
JP3913451B2 (ja) 2000-08-23 2007-05-09 株式会社東芝 半導体記憶装置
US6421269B1 (en) * 2000-10-17 2002-07-16 Intel Corporation Low-leakage MOS planar capacitors for use within DRAM storage cells
US6466473B2 (en) 2001-03-30 2002-10-15 Intel Corporation Method and apparatus for increasing signal to sneak ratio in polarizable cross-point matrix memory arrays
US6920059B2 (en) * 2002-11-29 2005-07-19 Infineon Technologies Aktiengesellschaft Reducing effects of noise coupling in integrated circuits with memory arrays
JP4058045B2 (ja) * 2005-01-05 2008-03-05 株式会社東芝 半導体記憶装置
JP2006344289A (ja) * 2005-06-08 2006-12-21 Toshiba Corp 強誘電体記憶装置
JP4887853B2 (ja) * 2006-03-17 2012-02-29 富士通セミコンダクター株式会社 半導体記憶装置
JP2008108417A (ja) * 2006-10-23 2008-05-08 Hynix Semiconductor Inc 低電力ｄｒａｍ及びその駆動方法
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US8723654B2 (en) 2010-07-09 2014-05-13 Cypress Semiconductor Corporation Interrupt generation and acknowledgment for RFID
US9135998B2 (en) * 2010-11-09 2015-09-15 Micron Technology, Inc. Sense operation flags in a memory device
US9324405B2 (en) * 2010-11-30 2016-04-26 Radiant Technologies, Inc. CMOS analog memories utilizing ferroelectric capacitors
US8811057B1 (en) * 2013-03-04 2014-08-19 Texas Instruments Incorporated Power reduction circuit and method
US9236107B1 (en) * 2014-07-03 2016-01-12 Texas Instruments Incorporated FRAM cell with cross point access
KR102188490B1 (ko) 2016-08-31 2020-12-09 마이크론 테크놀로지, 인크. 강유전체 메모리를 포함하며 강유전체 메모리에 액세스하기 위한 장치 및 방법
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US10552258B2 (en) * 2016-09-16 2020-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and driving method thereof
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CN109904229A (zh) * 2017-12-08 2019-06-18 萨摩亚商费洛储存科技股份有限公司 垂直式铁电薄膜储存晶体管和资料写入及读出方法
US10998025B2 (en) * 2019-02-27 2021-05-04 Kepler Computing, Inc. High-density low voltage non-volatile differential memory bit-cell with shared plate-line
CN112652340B (zh) * 2020-12-10 2022-05-20 光华临港工程应用技术研发(上海)有限公司 铁电存储器及其存储数据读取方法

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US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory

Also Published As

Publication number Publication date
KR920001549A (ko) 1992-01-30
US5400275A (en) 1995-03-21
DE4118847C2 (https=) 1993-08-05
DE4118847A1 (de) 1991-12-12

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