KR950013069B1 - 수소 침투 방지용 외부 코팅층을 갖는 흑연 척 및 탄소가 거의 없는 다결정 실리콘 제조 방법 - Google Patents

수소 침투 방지용 외부 코팅층을 갖는 흑연 척 및 탄소가 거의 없는 다결정 실리콘 제조 방법 Download PDF

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Publication number
KR950013069B1
KR950013069B1 KR1019900021577A KR900021577A KR950013069B1 KR 950013069 B1 KR950013069 B1 KR 950013069B1 KR 1019900021577 A KR1019900021577 A KR 1019900021577A KR 900021577 A KR900021577 A KR 900021577A KR 950013069 B1 KR950013069 B1 KR 950013069B1
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KR
South Korea
Prior art keywords
coating layer
outer coating
silicon
preventing hydrogen
hydrogen penetration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019900021577A
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English (en)
Korean (ko)
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KR910011636A (ko
Inventor
펜튼 저니간 마이클
쿡 윈터튼 라일리
Original Assignee
어드밴스드 실리콘 머티어리얼즈 인코포레이티드
에이취. 디. 언랜드
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Publication of KR910011636A publication Critical patent/KR910011636A/ko
Application granted granted Critical
Publication of KR950013069B1 publication Critical patent/KR950013069B1/ko
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C01B35/04—Metal borides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1019900021577A 1989-12-26 1990-12-24 수소 침투 방지용 외부 코팅층을 갖는 흑연 척 및 탄소가 거의 없는 다결정 실리콘 제조 방법 Expired - Fee Related KR950013069B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US45673089A 1989-12-26 1989-12-26
US456,730 1989-12-26
US456730 1989-12-26

Publications (2)

Publication Number Publication Date
KR910011636A KR910011636A (ko) 1991-08-07
KR950013069B1 true KR950013069B1 (ko) 1995-10-24

Family

ID=23813914

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900021577A Expired - Fee Related KR950013069B1 (ko) 1989-12-26 1990-12-24 수소 침투 방지용 외부 코팅층을 갖는 흑연 척 및 탄소가 거의 없는 다결정 실리콘 제조 방법

Country Status (5)

Country Link
US (1) US5284640A (enExample)
JP (1) JP2671235B2 (enExample)
KR (1) KR950013069B1 (enExample)
DE (1) DE4041901A1 (enExample)
IT (1) IT1246772B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101306218B1 (ko) * 2010-03-19 2013-09-09 와커 헤미 아게 크랙 없는 다결정질 실리콘 봉의 제조 방법
KR101435875B1 (ko) * 2012-03-12 2014-09-01 (주)아폴로테크 폴리실리콘 제조용 흑연척 재활용 방법

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IT1246772B (it) * 1989-12-26 1994-11-26 Advanced Silicon Materials Inc ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno''
DE69208303D1 (de) * 1991-08-29 1996-03-28 Ucar Carbon Tech Mit glasigem Kohlenstoff überzogene Graphit-Spannvorrichtung zum Gebrauch bei der Erzeugung von polykristallinem Silizium
RU2136590C1 (ru) * 1998-10-12 1999-09-10 Государственный научный центр РФ Государственный научно-исследовательский и проектный институт редкометаллической промышленности "Гиредмет" Способ получения поликристаллического кремния
RU2191847C2 (ru) * 2000-03-16 2002-10-27 Акционерное общество открытого типа "НИИ молекулярной электроники и завод "Микрон" Способ формирования слоев поликристаллического кремния
US20040173597A1 (en) * 2003-03-03 2004-09-09 Manoj Agrawal Apparatus for contacting gases at high temperature
WO2005123583A1 (ja) * 2004-06-22 2005-12-29 Shin-Etsu Film Co., Ltd. 多結晶シリコンの製造方法およびその製造方法によって製造される太陽電池用多結晶シリコン
RU2278075C2 (ru) * 2004-08-16 2006-06-20 Федеральное государственное унитарное предприятие "Государственный научно-исследовательский и проектный институт редкометаллической промышленности "Гиредмет" Способ получения поликристаллического кремния
KR100768147B1 (ko) * 2006-05-11 2007-10-18 한국화학연구원 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치
KR100768148B1 (ko) * 2006-05-22 2007-10-17 한국화학연구원 금속 코어수단을 이용한 다결정 실리콘 봉의 제조방법
EP2108619B1 (en) * 2008-03-21 2011-06-22 Mitsubishi Materials Corporation Polycrystalline silicon reactor
CN101980959A (zh) * 2008-03-26 2011-02-23 Gt太阳能公司 涂覆金的多晶硅反应器系统和方法
CN102084028B (zh) * 2008-06-23 2014-04-16 Gt太阳能公司 在化学气相沉积反应器中用于管丝的夹头及电桥的连接点
DE102009021825B3 (de) * 2009-05-18 2010-08-05 Kgt Graphit Technologie Gmbh Aufnahmekegel für Silizium-Anzuchtstäbe
EP2486167A1 (en) * 2009-10-09 2012-08-15 Hemlock Semiconductor Corporation Cvd apparatus
KR20120085276A (ko) * 2009-10-09 2012-07-31 헴로크세미컨덕터코포레이션 전극을 갖는 ｃｖｄ 장치
RU2012114734A (ru) * 2009-10-09 2013-11-20 Хемлок Семикэндактор Корпорейшн Технологическое устройство для осаждения материала и электрод для использования в таком устройстве
DE102010003069A1 (de) 2010-03-19 2011-09-22 Wacker Chemie Ag Kegelförmige Graphitelektrode mit hochgezogenem Rand
DE102010003064A1 (de) * 2010-03-19 2011-09-22 Wacker Chemie Ag Graphitelektrode
US10494714B2 (en) * 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
DE102011084372A1 (de) 2011-10-12 2012-02-09 Wacker Chemie Ag Vorrichtung für die Abscheidung von polykristallinem Silicium auf Dünnstäben
KR20150035735A (ko) * 2012-07-10 2015-04-07 헴로크세미컨덕터코포레이션 물질을 부착하기 위한 제조 장치 및 이에 사용하기 위한 소켓
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US10450649B2 (en) 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
JP2016016999A (ja) 2014-07-04 2016-02-01 信越化学工業株式会社 多結晶シリコン棒製造用のシリコン芯線および多結晶シリコン棒の製造装置
JP6373724B2 (ja) * 2014-11-04 2018-08-15 株式会社トクヤマ 芯線ホルダ及びシリコンの製造方法
CN105384172B (zh) * 2015-12-29 2017-09-22 哈尔滨工业大学 一种改良西门子法多晶硅还原炉用石墨夹头及其使用方法
JP7178209B2 (ja) * 2018-08-22 2022-11-25 株式会社Uacj 熱交換器の製造方法

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DE1223804B (de) * 1961-01-26 1966-09-01 Siemens Ag Vorrichtung zur Gewinnung reinen Halbleitermaterials, wie Silicium
US3329527A (en) * 1963-09-13 1967-07-04 Monsanto Co Graphite heating elements and method of conditioning the heating surfaces thereof
US3406044A (en) * 1965-01-04 1968-10-15 Monsanto Co Resistance heating elements and method of conditioning the heating surfaces thereof
US3447902A (en) * 1966-04-04 1969-06-03 Motorola Inc Single crystal silicon rods
DE2508802A1 (de) * 1975-02-28 1976-09-09 Siemens Ag Verfahren zum abscheiden von elementarem silicium
JPS53108029A (en) * 1977-03-03 1978-09-20 Komatsu Mfg Co Ltd Method of making high purity silicon having uniform shape
US4621017A (en) * 1982-04-15 1986-11-04 Kennecott Corporation Corrosion and wear resistant graphite material and method of manufacture
JPS63123806A (ja) * 1986-11-11 1988-05-27 Mitsubishi Metal Corp 多結晶シリコンの製造方法
IT1246772B (it) * 1989-12-26 1994-11-26 Advanced Silicon Materials Inc ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno''

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101306218B1 (ko) * 2010-03-19 2013-09-09 와커 헤미 아게 크랙 없는 다결정질 실리콘 봉의 제조 방법
KR101435875B1 (ko) * 2012-03-12 2014-09-01 (주)아폴로테크 폴리실리콘 제조용 흑연척 재활용 방법

Also Published As

Publication number Publication date
IT9022536A1 (it) 1992-06-24
IT1246772B (it) 1994-11-26
IT9022536A0 (it) 1990-12-24
KR910011636A (ko) 1991-08-07
US5284640A (en) 1994-02-08
JPH069295A (ja) 1994-01-18
DE4041901A1 (de) 1991-06-27
JP2671235B2 (ja) 1997-10-29
DE4041901C2 (enExample) 1993-04-08

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