KR950012673A - 플라즈마로부터 정전기척을 보호하기 위해 자석을 갖는 플라즈마 반응기 - Google Patents

플라즈마로부터 정전기척을 보호하기 위해 자석을 갖는 플라즈마 반응기 Download PDF

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Publication number
KR950012673A
KR950012673A KR1019940027205A KR19940027205A KR950012673A KR 950012673 A KR950012673 A KR 950012673A KR 1019940027205 A KR1019940027205 A KR 1019940027205A KR 19940027205 A KR19940027205 A KR 19940027205A KR 950012673 A KR950012673 A KR 950012673A
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KR
South Korea
Prior art keywords
magnet
plasma
gap
electrostatic chuck
sidewall
Prior art date
Application number
KR1019940027205A
Other languages
English (en)
Inventor
에이. 차프만 로버트
Original Assignee
제임스 조셉 드롱
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제임스 조셉 드롱, 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 제임스 조셉 드롱
Publication of KR950012673A publication Critical patent/KR950012673A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

본 발명은 웨이퍼 주변부 에지에 관한 석영벽내에 자석을 배치시키므로 정전기척 및 웨이퍼 주변부 후면 에 가격되는 플라즈마의 플라즈마 반응기내의 문제점을 해결한다.

Description

플라즈마로부터 정전기척을 보호하기 위해 자석을 갖는 플라즈마 반응기
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 웨이퍼를 유지하는 정전기척을 포함하며, 본 발명의 한 실시예에 따라 정전기척을 보호하기 위한 영구 링 자석을 예시하는 플라즈마 반응기의 일부의 간략도,
제2도는 정전기척을 예시하는 제1도의 일부에 대한 확대도.

Claims (5)

  1. 반도체 기판을 처리하기 위한 플라즈마를 발생하는 플라즈마 반응기에서, 상기 반응기내의 배치된 상기 기판을 유지하기 위한 장치가, 주면갭을 갖는 상기 기판의 주면부를 에워싸는 측벽과, 상기 웨이퍼를 유도하기 위한 정전기척과, 상기 주면갭 주변의 자석을 포함하는 것을 특징으로 하는 장치.
  2. 제1항에 있어서, 상기 자석은, 상기 갭 주위에서 이동하는 하전입자를 검출하기 위해서 상기 갭평면에 하나의 실질적인 성분을 갖는 자장을 갖는 것을 특징으로 하는 장치.
  3. 제1항에 있어서, 상기 자석은 상기 측벽내에 배치되는 것을 특징으로 하는 장치.
  4. 제3항에 있어서, 상기 측벽은 상기 웨이퍼를 에워싸는 원통형 측벽 이며 여 기서 상기 갭은 환형 이며 상기 자석은 살기 측벽내의 상기 갭 부근의 원형 링 자석을 포함하는 것을 특징으로 하는 장치.
  5. 제4항에 있어서, 상기 자석은 영구자석인 것을 특징으로 하는 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940027205A 1993-10-29 1994-10-25 플라즈마로부터 정전기척을 보호하기 위해 자석을 갖는 플라즈마 반응기 KR950012673A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/145,990 1993-10-29
US08/145,990 US5484485A (en) 1993-10-29 1993-10-29 Plasma reactor with magnet for protecting an electrostatic chuck from the plasma

Publications (1)

Publication Number Publication Date
KR950012673A true KR950012673A (ko) 1995-05-16

Family

ID=22515448

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940027205A KR950012673A (ko) 1993-10-29 1994-10-25 플라즈마로부터 정전기척을 보호하기 위해 자석을 갖는 플라즈마 반응기

Country Status (6)

Country Link
US (2) US5484485A (ko)
EP (1) EP0651425B1 (ko)
JP (1) JP3457401B2 (ko)
KR (1) KR950012673A (ko)
AT (1) ATE152546T1 (ko)
DE (1) DE69402941T2 (ko)

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US5636098A (en) * 1994-01-06 1997-06-03 Applied Materials, Inc. Barrier seal for electrostatic chuck
US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
US5592358A (en) * 1994-07-18 1997-01-07 Applied Materials, Inc. Electrostatic chuck for magnetic flux processing
EP0742588A3 (en) * 1995-05-11 1997-08-27 Applied Materials Inc Method of protecting an electrostatic chuck
US6471822B1 (en) 1996-01-24 2002-10-29 Applied Materials, Inc. Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma
TW303480B (en) * 1996-01-24 1997-04-21 Applied Materials Inc Magnetically confined plasma reactor for processing a semiconductor wafer
US5986873A (en) * 1996-07-01 1999-11-16 Packard Hughes Interconnect Co. Creating surface topography on an electrostatic chuck with a mandrel
US5870271A (en) * 1997-02-19 1999-02-09 Applied Materials, Inc. Pressure actuated sealing diaphragm for chucks
US6120608A (en) * 1997-03-12 2000-09-19 Applied Materials, Inc. Workpiece support platen for semiconductor process chamber
JPH10284360A (ja) 1997-04-02 1998-10-23 Hitachi Ltd 基板温度制御装置及び方法
US6117401A (en) * 1998-08-04 2000-09-12 Juvan; Christian Physico-chemical conversion reactor system with a fluid-flow-field constrictor
KR100292410B1 (ko) 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
US6322661B1 (en) * 1999-11-15 2001-11-27 Lam Research Corporation Method and apparatus for controlling the volume of a plasma
US6863835B1 (en) * 2000-04-25 2005-03-08 James D. Carducci Magnetic barrier for plasma in chamber exhaust
US20040112544A1 (en) * 2002-12-16 2004-06-17 Hongwen Yan Magnetic mirror for preventing wafer edge damage during dry etching
US7059268B2 (en) * 2002-12-20 2006-06-13 Tokyo Electron Limited Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma
US20050067146A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Two phase cooling system method for burn-in testing
US20050067147A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Loop thermosyphon for cooling semiconductors during burn-in testing
US7013956B2 (en) 2003-09-02 2006-03-21 Thermal Corp. Heat pipe evaporator with porous valve
US7129731B2 (en) * 2003-09-02 2006-10-31 Thermal Corp. Heat pipe with chilled liquid condenser system for burn-in testing
US7628864B2 (en) * 2004-04-28 2009-12-08 Tokyo Electron Limited Substrate cleaning apparatus and method
US10460968B2 (en) 2013-12-02 2019-10-29 Applied Materials, Inc. Electrostatic chuck with variable pixelated magnetic field

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US4140943A (en) * 1977-06-01 1979-02-20 The United States Of America As Represented By The United States Department Of Energy Plasma generating device with hairpin-shaped cathode filaments
JPS6372877A (ja) * 1986-09-12 1988-04-02 Tokuda Seisakusho Ltd 真空処理装置
JPH0730468B2 (ja) * 1988-06-09 1995-04-05 日電アネルバ株式会社 ドライエッチング装置
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JP3362432B2 (ja) * 1992-10-31 2003-01-07 ソニー株式会社 プラズマ処理方法及びプラズマ処理装置

Also Published As

Publication number Publication date
EP0651425A1 (en) 1995-05-03
EP0651425B1 (en) 1997-05-02
DE69402941D1 (de) 1997-06-05
DE69402941T2 (de) 1997-11-20
JP3457401B2 (ja) 2003-10-20
US5484485A (en) 1996-01-16
JPH07183285A (ja) 1995-07-21
US5830808A (en) 1998-11-03
ATE152546T1 (de) 1997-05-15

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