KR950011017B1 - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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Publication number
KR950011017B1
KR950011017B1 KR1019910022904A KR910022904A KR950011017B1 KR 950011017 B1 KR950011017 B1 KR 950011017B1 KR 1019910022904 A KR1019910022904 A KR 1019910022904A KR 910022904 A KR910022904 A KR 910022904A KR 950011017 B1 KR950011017 B1 KR 950011017B1
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KR
South Korea
Prior art keywords
layer
diffusion layer
iil
collector
buried
Prior art date
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Expired - Fee Related
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KR1019910022904A
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English (en)
Korean (ko)
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KR930003417A (ko
Inventor
아끼히로 칸다
미쯔오 타나카
타케히로 히라이
마시히로 나카타니
Original Assignee
미쯔시다덴기산교 가부시기가이샤
다니이 아끼오
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Publication of KR930003417A publication Critical patent/KR930003417A/ko
Application granted granted Critical
Publication of KR950011017B1 publication Critical patent/KR950011017B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/087—I2L integrated injection logic

Landscapes

  • Bipolar Integrated Circuits (AREA)
KR1019910022904A 1991-07-01 1991-12-13 반도체장치 및 그 제조방법 Expired - Fee Related KR950011017B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15926891 1991-07-01
JP91-159268 1991-07-01

Publications (2)

Publication Number Publication Date
KR930003417A KR930003417A (ko) 1993-02-24
KR950011017B1 true KR950011017B1 (ko) 1995-09-27

Family

ID=15690065

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910022904A Expired - Fee Related KR950011017B1 (ko) 1991-07-01 1991-12-13 반도체장치 및 그 제조방법

Country Status (4)

Country Link
US (2) US5162252A (enExample)
EP (1) EP0521219B1 (enExample)
KR (1) KR950011017B1 (enExample)
DE (1) DE69128963T2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015025996A1 (ko) * 2013-08-22 2015-02-26 (주)코미코 에어로졸 코팅 방법 및 이에 의해 형성된 내플라즈마 부재

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0534632B1 (en) * 1991-09-24 2002-01-16 Matsushita Electronics Corporation, Ltd. Semiconductor integrated circuit device and method of fabricating the same
US5268312A (en) * 1992-10-22 1993-12-07 Motorola, Inc. Method of forming isolated wells in the fabrication of BiCMOS devices
US5369042A (en) * 1993-03-05 1994-11-29 Texas Instruments Incorporated Enhanced performance bipolar transistor process
JPH07235602A (ja) * 1994-02-21 1995-09-05 Mitsubishi Electric Corp Ｉｉｌ回路を有する半導体装置およびその製造方法
JP3547811B2 (ja) * 1994-10-13 2004-07-28 株式会社ルネサステクノロジ バイポーラトランジスタを有する半導体装置およびその製造方法
JP3159237B2 (ja) * 1996-06-03 2001-04-23 日本電気株式会社 半導体装置およびその製造方法
KR100258436B1 (ko) * 1996-10-11 2000-06-01 김덕중 상보형 쌍극성 트랜지스터 및 그 제조 방법
US6140690A (en) * 1996-11-18 2000-10-31 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US6165868A (en) * 1999-06-04 2000-12-26 Industrial Technology Research Institute Monolithic device isolation by buried conducting walls
US6894366B2 (en) * 2000-10-10 2005-05-17 Texas Instruments Incorporated Bipolar junction transistor with a counterdoped collector region
EP1646084A1 (en) * 2004-10-06 2006-04-12 Infineon Technologies AG A method in the fabrication of an integrated injection logic circuit
US20070298576A1 (en) * 2006-06-21 2007-12-27 Kuhn Kelin J Methods of forming bipolar transistors by silicide through contact and structures formed thereby
US20180076038A1 (en) * 2016-09-09 2018-03-15 Texas Instruments Incorporated Method For Producing Two N-Type Buried Layers In An Integrated Circuit

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4258379A (en) * 1978-09-25 1981-03-24 Hitachi, Ltd. IIL With in and outdiffused emitter pocket
DE3020609C2 (de) * 1979-05-31 1985-11-07 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zum Herstellen einer integrierten Schaltung mit wenigstens einem I↑2↑L-Element
JPS57116430A (en) * 1981-01-13 1982-07-20 Toshiba Corp Inverted logical circuit
JPS57164560A (en) * 1981-04-02 1982-10-09 Toshiba Corp Manufacture of semiconductor integrated circuit device
DE3361832D1 (en) * 1982-04-19 1986-02-27 Matsushita Electric Industrial Co Ltd Semiconductor ic and method of making the same
JPS59141261A (ja) * 1983-01-31 1984-08-13 Matsushita Electric Ind Co Ltd 半導体集積回路装置の製造方法
JPS5967255A (ja) * 1982-10-07 1984-04-16 Sumitomo Chem Co Ltd Ｎ−フエニルテトラヒドロフタラミン酸誘導体、その製造法およびそれを有効成分とする除草剤
JPS6052038A (ja) * 1983-08-31 1985-03-23 Nec Corp 半導体装置の製造方法
DE3586341T2 (de) * 1984-02-03 1993-02-04 Advanced Micro Devices Inc Bipolartransistor mit in schlitzen gebildeten aktiven elementen.
US4984048A (en) * 1987-07-10 1991-01-08 Hitachi, Ltd. Semiconductor device with buried side contact
ZA891937B (en) * 1988-04-04 1990-11-28 Ppg Industries Inc Pigment grinding vehicles containing quaternary ammonium and ternary sulfonium groups
JPH0258865A (ja) * 1988-08-24 1990-02-28 Nec Corp 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015025996A1 (ko) * 2013-08-22 2015-02-26 (주)코미코 에어로졸 코팅 방법 및 이에 의해 형성된 내플라즈마 부재
US10272467B2 (en) 2013-08-22 2019-04-30 Komico Co., Ltd. Aerosol coating method and plasma-resistant member formed by the same

Also Published As

Publication number Publication date
EP0521219B1 (en) 1998-02-25
US5331198A (en) 1994-07-19
KR930003417A (ko) 1993-02-24
EP0521219A2 (en) 1993-01-07
EP0521219A3 (enExample) 1994-08-31
US5162252A (en) 1992-11-10
DE69128963T2 (de) 1998-07-30
DE69128963D1 (de) 1998-04-02

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