KR950008401B1 - Nonvolatile memory device with a high number of cycle programming endurance - Google Patents

Nonvolatile memory device with a high number of cycle programming endurance Download PDF

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Publication number
KR950008401B1
KR950008401B1 KR88006177A KR880006177A KR950008401B1 KR 950008401 B1 KR950008401 B1 KR 950008401B1 KR 88006177 A KR88006177 A KR 88006177A KR 880006177 A KR880006177 A KR 880006177A KR 950008401 B1 KR950008401 B1 KR 950008401B1
Authority
KR
South Korea
Prior art keywords
memory device
nonvolatile memory
high number
cycle programming
programming endurance
Prior art date
Application number
KR88006177A
Other languages
English (en)
Other versions
KR880014573A (ko
Inventor
Casagrande Giulio
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Publication of KR880014573A publication Critical patent/KR880014573A/ko
Application granted granted Critical
Publication of KR950008401B1 publication Critical patent/KR950008401B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR88006177A 1987-05-27 1988-05-26 Nonvolatile memory device with a high number of cycle programming endurance KR950008401B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT8783629A IT1214246B (it) 1987-05-27 1987-05-27 Dispositivo di memoria non volatile ad elevato numero di cicli di modifica.
IT87-83629A 1987-05-27

Publications (2)

Publication Number Publication Date
KR880014573A KR880014573A (ko) 1988-12-24
KR950008401B1 true KR950008401B1 (en) 1995-07-28

Family

ID=11323385

Family Applications (1)

Application Number Title Priority Date Filing Date
KR88006177A KR950008401B1 (en) 1987-05-27 1988-05-26 Nonvolatile memory device with a high number of cycle programming endurance

Country Status (6)

Country Link
US (1) US4807188A (ko)
EP (1) EP0293339B1 (ko)
JP (1) JP3098012B2 (ko)
KR (1) KR950008401B1 (ko)
DE (1) DE3864449D1 (ko)
IT (1) IT1214246B (ko)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1221780B (it) * 1988-01-29 1990-07-12 Sgs Thomson Microelectronics Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos
US5268319A (en) 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5029131A (en) * 1988-06-29 1991-07-02 Seeq Technology, Incorporated Fault tolerant differential memory cell and sensing
US5163021A (en) * 1989-04-13 1992-11-10 Sundisk Corporation Multi-state EEprom read and write circuits and techniques
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system
US7190617B1 (en) * 1989-04-13 2007-03-13 Sandisk Corporation Flash EEprom system
DE69033262T2 (de) * 1989-04-13 2000-02-24 Sandisk Corp., Santa Clara EEPROM-Karte mit Austauch von fehlerhaften Speicherzellen und Zwischenspeicher
GB8916019D0 (en) * 1989-07-13 1989-08-31 Hughes Microelectronics Ltd A non-volatile ram bit cell
IT1230363B (it) * 1989-08-01 1991-10-18 Sgs Thomson Microelectronics Cella di memoria eeprom, con protezione migliorata da errori dovuti a rottura della cella.
US4992980A (en) * 1989-08-07 1991-02-12 Intel Corporation Novel architecture for virtual ground high-density EPROMS
US5168464A (en) * 1989-11-29 1992-12-01 Ncr Corporation Nonvolatile differential memory device and method
JP2685966B2 (ja) * 1990-06-22 1997-12-08 株式会社東芝 不揮発性半導体記憶装置
IT1247650B (it) * 1990-10-31 1994-12-28 Sgs Thomson Microelectronics Memoria flash eprom con aumentata immunita' da soft programming su una linea di riferimento
JP3060680B2 (ja) * 1990-11-30 2000-07-10 日本電気株式会社 不揮発性半導体記憶装置
US5289412A (en) * 1992-06-19 1994-02-22 Intel Corporation High-speed bias-stabilized current-mirror referencing circuit for non-volatile memories
US5561632A (en) * 1994-01-26 1996-10-01 Sony Corporation Nonvolatile semiconductor flash memory
JP3336813B2 (ja) * 1995-02-01 2002-10-21 ソニー株式会社 不揮発性半導体メモリ装置
EP0736876B1 (en) * 1995-04-04 2001-06-27 STMicroelectronics S.r.l. Selective fuse encoder
DE69521051T2 (de) * 1995-12-29 2001-09-06 Stmicroelectronics S.R.L., Agrate Brianza Programmierbare Vorrichtung mit Basismodulen, die mittels Flash-Speicherzellen mit einander verbunden werden
FR2753829B1 (fr) * 1996-09-24 1998-11-13 Circuit de lecture pour memoire non volatile fonctionnant avec une basse tension d'alimentation
KR100265336B1 (ko) * 1997-06-30 2000-09-15 김영환 트랜스컨덕터
FR2778253B1 (fr) * 1998-04-30 2000-06-02 Sgs Thomson Microelectronics Dispositif de configuration d'options dans un circuit integre et procede de mise en oeuvre
JP4484344B2 (ja) * 2000-09-08 2010-06-16 ローム株式会社 不揮発性半導体記憶装置
JP4678957B2 (ja) * 2001-01-29 2011-04-27 パナソニック株式会社 不揮発性メモリアレイ、マイクロコンピュータおよびマイクロコンピュータのプログラム書き換え方法
US6992938B1 (en) * 2001-12-06 2006-01-31 Virage Logic Corporation Methods and apparatuses for test circuitry for a dual-polarity non-volatile memory cell
US7130213B1 (en) * 2001-12-06 2006-10-31 Virage Logic Corporation Methods and apparatuses for a dual-polarity non-volatile memory cell
US6842375B1 (en) 2001-12-06 2005-01-11 Virage Logic Corporation Methods and apparatuses for maintaining information stored in a non-volatile memory cell
US6788574B1 (en) 2001-12-06 2004-09-07 Virage Logic Corporation Electrically-alterable non-volatile memory cell
US6998670B2 (en) * 2003-04-25 2006-02-14 Atmel Corporation Twin EEPROM memory transistors with subsurface stepped floating gates
US7082490B2 (en) * 2003-10-20 2006-07-25 Atmel Corporation Method and system for enhancing the endurance of memory cells
JP4860160B2 (ja) 2004-02-10 2012-01-25 株式会社半導体エネルギー研究所 半導体装置
US7755938B2 (en) * 2004-04-19 2010-07-13 Saifun Semiconductors Ltd. Method for reading a memory array with neighbor effect cancellation
US7978515B2 (en) * 2007-03-23 2011-07-12 Sharp Kabushiki Kaisha Semiconductor storage device and electronic equipment therefor
JP5417765B2 (ja) * 2008-08-19 2014-02-19 凸版印刷株式会社 不揮発性半導体メモリセル及び不揮発性半導体メモリ装置
US10924112B2 (en) * 2019-04-11 2021-02-16 Ememory Technology Inc. Bandgap reference circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3279855D1 (en) * 1981-12-29 1989-09-07 Fujitsu Ltd Nonvolatile semiconductor memory circuit
DE3267974D1 (en) * 1982-03-17 1986-01-30 Itt Ind Gmbh Deutsche Electrically erasable memory matrix (eeprom)
US4566080A (en) * 1983-07-11 1986-01-21 Signetics Corporation Byte wide EEPROM with individual write circuits
US4667312A (en) * 1983-11-28 1987-05-19 Exel Microelectronics Inc. Charge pump method and apparatus
JPS60150297A (ja) * 1984-01-13 1985-08-07 Nec Corp 記憶装置
NL8400326A (nl) * 1984-02-03 1985-09-02 Philips Nv Geintegreerde schakeling met veldeffecttransistoren en een programmeerbaar leesgeheugen.
US4599707A (en) * 1984-03-01 1986-07-08 Signetics Corporation Byte wide EEPROM with individual write circuits and write prevention means

Also Published As

Publication number Publication date
JP3098012B2 (ja) 2000-10-10
DE3864449D1 (de) 1991-10-02
JPS63306600A (ja) 1988-12-14
IT1214246B (it) 1990-01-10
US4807188A (en) 1989-02-21
IT8783629A0 (it) 1987-05-27
EP0293339A1 (en) 1988-11-30
KR880014573A (ko) 1988-12-24
EP0293339B1 (en) 1991-08-28

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