KR940010187A - 유기 소스와 오존의 반응을 통한 반도체 장치 제조의 상압 cvd 법에 있어서의 질소 함유 소스의 추가 - Google Patents
유기 소스와 오존의 반응을 통한 반도체 장치 제조의 상압 cvd 법에 있어서의 질소 함유 소스의 추가 Download PDFInfo
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- KR940010187A KR940010187A KR1019930015075A KR930015075A KR940010187A KR 940010187 A KR940010187 A KR 940010187A KR 1019930015075 A KR1019930015075 A KR 1019930015075A KR 930015075 A KR930015075 A KR 930015075A KR 940010187 A KR940010187 A KR 940010187A
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- semiconductor device
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- 238000005229 chemical vapour deposition Methods 0.000 title abstract 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 title 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 title 1
- 238000005389 semiconductor device fabrication Methods 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract 7
- 238000004519 manufacturing process Methods 0.000 claims abstract 6
- 239000004065 semiconductor Substances 0.000 claims abstract 6
- 229910007991 Si-N Inorganic materials 0.000 claims abstract 3
- 229910006294 Si—N Inorganic materials 0.000 claims abstract 3
- WPLPPVYEHCBOAG-UHFFFAOYSA-N 1,2,2,3,3,6,6-heptamethylazadisiline Chemical compound CC1(N([Si]([Si](C=C1)(C)C)(C)C)C)C WPLPPVYEHCBOAG-UHFFFAOYSA-N 0.000 claims abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910000077 silane Inorganic materials 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- JPVQCHVLFHXNKB-UHFFFAOYSA-N 1,2,3,4,5,6-hexamethyldisiline Chemical group CC1=C(C)[Si](C)=[Si](C)C(C)=C1C JPVQCHVLFHXNKB-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- LULXBAGMGMJJRW-UHFFFAOYSA-N n,2-bis(trimethylsilyl)acetamide Chemical compound C[Si](C)(C)CC(=O)N[Si](C)(C)C LULXBAGMGMJJRW-UHFFFAOYSA-N 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract 2
- 230000001747 exhibiting effect Effects 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- AQUDMFPSIFSBOJ-UHFFFAOYSA-N 4,4,5,5,6,6-hexamethyl-3H-azadisiline Chemical compound CC1(C(C(N=[SiH][SiH2]1)(C)C)(C)C)C AQUDMFPSIFSBOJ-UHFFFAOYSA-N 0.000 abstract 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
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- H01L21/205—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
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Abstract
저온에서 막성장을 가능하게 하고, 우수한 표면 평탄효과를 나타내는 양질의 층간 절연막을 생산하는 반도체 장치 제조방법이 제공되었다.
TEOS-O3계 상압 CVD법에서는, 막 성장은 TEOS 소스에 조성물내에 질소를 포함하는 소스를 첨가함으로써 실행된다.
소스로는 헵타메틸 디실라진(화학식 : (CH3)3SiN(CH3)Si(CH3)3, N, O-비스-트리메틸시릴 아세트아미도(화학식 : (CH3)C(OSi(CH3)3) (NSi(CH3)3) 혹은 트리디메틸아미노 실란(화학식 : (CH3)2N)3SiN)이 사용된다.
또한 기판 재료에 상관없이 균일한 성장 속도의 막 성장이 가능하고 우수한 표면 평탄 효과를 나타내는 양질의 실리콘 산화막을 생산할 수 있는 반도체 장치 제조방법이 제공되었다.
조성물내에 Si-N 본드를 포함하는 유기 소스와 O3가 기판에 전도되어 상압에서 서로 반응함으로써 기판상에 실리콘 산화막이 성장된다. 유기 소스는 예를 들면, 헥타메틸 디실라진((CH3)3Si-N(H)-Si(CH3)3)이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 방법의 한 실시예에서 실리콘 산화막의 성장에 적용되는 TEOS-O3계 상압 CVD장치를 나타내는 블록도,
제2도는 각각의 질소 소스에 대하여 증기압과 온도와의 관계를 나타내는 그래프,
제3도는 본 발명의 방법의 한 실시예에서 적용되는 유기 소스-O3계 상압 CVD 장치를 나타내는 블록도.
Claims (6)
- 조성물내에 Si를 포함하는 유기 소스와 O3를 기판에 전도하는 단계와, 유기 소스와 O3가 상압에서 서로 화학적으로 반응하여 기판상에 실리콘 산화막을 성장하는 단계를 포함하는 반도체 장치 제조방법은, 유기 소스에 조성물내에 질소를 포함하는 소스를 첨가함으로써 실리콘 조성물내에 질소를 포함하는 소스를 첨가함으로써 실리콘산화막의 성장을 실현하는 단계를 포함하는 반도체 장치 제조방법.
- 제1항에 있어서, 조성물내에 질소를 포함하는 소스가 헵타메틸 디실라진인 반도체 장치 제조방법.
- 제1항에 있어서, 조성물내에 질소를 포함하는 소스가 N, O-비스-트리메틸시릴 아세트아미드인 반도체장치 제조방법.
- 제1항에 있어서, 조성물내에 질소를포함하는 소스가 트리디메틸아미노 실란인 반도체 장치 제조방법.
- 유기 소스와 O3를 기판에 전도하고 유기 소스와 O3가 상압에서 서로 화학적으로 반응하여 기판상에 실리콘산화막을 성장하는 단계를 포함하는 반도체 장치 제조방법에 있어서, 유기 소스가 조성물내에 Si-N 본드를 포함하는 반도체 장치 제조방법.
- 제5항에 있어서, 유기 소스가 헥사메틸 디실라진인 반도체 장치 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP92-267231 | 1992-10-06 | ||
| JP26723192A JP2945217B2 (ja) | 1992-02-05 | 1992-10-06 | 半導体装置の製造方法 |
| JP93-104098 | 1993-04-30 | ||
| JP05104098A JP3080809B2 (ja) | 1993-04-30 | 1993-04-30 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940010187A true KR940010187A (ko) | 1994-05-24 |
| KR970005678B1 KR970005678B1 (ko) | 1997-04-18 |
Family
ID=14371648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930015075A KR970005678B1 (ko) | 1992-10-06 | 1993-08-03 | 유기 소스와 오존의 반응을 통한 반도체 장치 제조의 상압 cvd법에 있어서의 질소 함유 소스의 추가 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3080809B2 (ko) |
| KR (1) | KR970005678B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113196455A (zh) * | 2018-11-30 | 2021-07-30 | 株式会社明电舍 | 氧化膜形成装置 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6342277B1 (en) | 1996-08-16 | 2002-01-29 | Licensee For Microelectronics: Asm America, Inc. | Sequential chemical vapor deposition |
| FI118804B (fi) | 1999-12-03 | 2008-03-31 | Asm Int | Menetelmä oksidikalvojen kasvattamiseksi |
| JP4986054B2 (ja) * | 2007-11-13 | 2012-07-25 | 株式会社明電舎 | 酸化膜形成方法及びその装置 |
-
1993
- 1993-04-30 JP JP05104098A patent/JP3080809B2/ja not_active Expired - Fee Related
- 1993-08-03 KR KR1019930015075A patent/KR970005678B1/ko not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113196455A (zh) * | 2018-11-30 | 2021-07-30 | 株式会社明电舍 | 氧化膜形成装置 |
| CN113196455B (zh) * | 2018-11-30 | 2023-06-13 | 株式会社明电舍 | 氧化膜形成装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR970005678B1 (ko) | 1997-04-18 |
| JPH06314654A (ja) | 1994-11-08 |
| JP3080809B2 (ja) | 2000-08-28 |
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