KR940006262A - 반도체장치 및 그 제조방법 - Google Patents
반도체장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR940006262A KR940006262A KR1019930011754A KR930011754A KR940006262A KR 940006262 A KR940006262 A KR 940006262A KR 1019930011754 A KR1019930011754 A KR 1019930011754A KR 930011754 A KR930011754 A KR 930011754A KR 940006262 A KR940006262 A KR 940006262A
- Authority
- KR
- South Korea
- Prior art keywords
- region
- semiconductor
- conductive
- semiconductor device
- monocrystalline silicon
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 238000010894 electron beam technology Methods 0.000 claims abstract description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract 10
- 239000000758 substrate Substances 0.000 claims abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 2
- 238000010438 heat treatment Methods 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims abstract 2
- 239000010703 silicon Substances 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims 4
- 230000005669 field effect Effects 0.000 claims 3
- 230000001678 irradiating effect Effects 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 2
- 230000007547 defect Effects 0.000 claims 2
- 238000002161 passivation Methods 0.000 claims 2
- 230000000295 complement effect Effects 0.000 claims 1
- 239000000969 carrier Substances 0.000 abstract 1
- 230000005516 deep trap Effects 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Abstract
본 발명은 센서로부터의 프로일렉트릭 케리어를 방지하고 반도체 이미지센서 장치의 성형특성을 개선시킴과 동시에 바이폴라소자를 갖는 반도체장치의 스위칭특성을 위해 CMOS 구조를 채용한 반도체 집적회로장치의 랫치-업 저항을 개선시키기 위한 것이다. 2MeV, 1E15/㎤이상의 전자비임이 기판의 모노크리스탈 실리콘 반도체영역에 조사되며 이에 따라 200℃이상의 고열을 이용하여 열처리를 행한다. 그 결과, 원자가 대역 EV로부터의 활성에너지를 갖도록 150K에서 0.leV이고 그 농도가 대략 1.2-1.7E15/㎤ 딥레벨 트랩이 얻어진다. 실리콘 대역갭의 재결합중심으로 작용하는 상기 레벨을 갖는 반도체 기판이 얻어진다. 본 반도체 기판의 칩사이즈는 증가하지 않으며, epi웨이퍼를 사용하지 않으므로 코스트로 절감된다. 뿐만 아니라, 반도체 집적회로장치의 전기적 특성을 평가한 이전 또는 이후에 반도체 집적회로 장치를 제조하는 것이 가능하다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 반도체장치의 제1실시예로써, 반도체 집적회로장치의 일부분을 도시한 개략적인 단면도,
제2도는 본 발명에 따른 반도체장치의 제1실시예로써, 반도체 집적회로 장치의 또 다른 부분을 도시한 평면도,
제3도는 본 발명에 따른 반도체 장치의 제1실시예로써, 반도체 집적회로장치의 제조방법인 전자비임 조사법을 도시한 개략도,
제4도는 반도체집적회로장치의 랫치-업 저항을 측정하는데 적용되는 회로를 도시한 개략적인 블록도.
Claims (9)
- 농도가 1.6×1013- 2.0×1013cm-3인 모노크리스탈 실리콘 반도체영역에서 활성에너지가 150K에서 0.28 - 0.32ev인 크리스탈 결함이 헝성된 것을 특징으로 하는 반도체장치.
- 제1항에 있어서, 활성에너지가 150K에서 0.1eV이하인 크리스탈 결함은 1.2-1015cm-3~ 1.7×1015cm-3의 농도로 생성되는 것을 특징으로 하는 반도체장치.
- 제1항에 있어서, 상기 모노크리스탈 실리콘 반도체영역에는 N-형 절연게이트 전계효과 트랜지스터와 P-형 절연게이트 전계효과트랜지스터로 구성된 상보형 절연게이트 전계효과트랜지스터가 배열된 것을 특징으로 하는 반도체장치.
- 제1항에 있어서, 상기 모노크리스탈 실리콘반도체 영역에는 다수의 포토센서가 미리 예정된 간격으로 배열된 것을 특징으로 하는 반도체장치.
- 제1항에 있어서, 상기 모노크리스탈 실리콘 반도체영역의 일부분에는 제1도전형 베이스 영역이 구성되고, 실리콘 반도체 영역에는 상기 베이스영역에 인접해서 제2도전형 에미터영역 및 컬렉터 영역이 구성된 것을 특징으로 하는 반도체장치.
- 기판에 구성된 제1도전형 모노크리스탈 실리콘 반도체영역의 일부분에 제2도전형 불순물영역을 형성하는 스텝과, 상기 제1도전형 모노크리스탈 실리콘반도체영역 및 상기 제2도전형 불순물영역에 각각의 전극을 구성시키는 스텝과, 상기 제1도전형 모노크리스탈 실리콘 반도체영역, 상기 제2도전형 불순물영역 및 상기 전극을 커버하는 부동태화막을 형성하는 스텝과, 상기 제1도전형 모노크리스탈 실리콘 반도체 영역, 상기 제2도전형 불순물 영역 및 상기 전극을 커버하는 부동태화막을 형성하는 스텝과, 2MeV이상의 에너지를 갖는 전자비임을 1×1014cm-2의 밀도로 상기 제1도전형 모노크리스탈 실리콘 반도체 영역에 조사하는 스텝으로 이루어진 것을 특징으로 하는 반도체 장치 제조 방법.
- 제6항에 있어서, 상기 전자비임을 조사하기 이전에 반도체 장치의 특성을 평가하는 스텝이 추가구성된 것을 특징으로 하는 반도체 제조 방법.
- 제6항에 있어서, 상기 전자비임을 조사하는 스텝 이후에 200∼300℃의 열을 이용하여 열처리하는 스텝이 추가 구성된 것을 특징으로 하는 반도체 제조방법.
- 제6항에 있어서, 상기 전자비임조사스텝은 진공도가 1×10-2Torr인 기체에 의해 행해지는 것을 특징으로 하는 반도체 조사방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16707692 | 1992-06-25 | ||
| JP92-167076 | 1992-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR940006262A true KR940006262A (ko) | 1994-03-23 |
Family
ID=26491232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930011754A KR940006262A (ko) | 1992-06-25 | 1993-06-25 | 반도체장치 및 그 제조방법 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US5672906A (ko) |
| KR (1) | KR940006262A (ko) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994162A (en) * | 1998-02-05 | 1999-11-30 | International Business Machines Corporation | Integrated circuit-compatible photo detector device and fabrication process |
| US6218719B1 (en) * | 1998-09-18 | 2001-04-17 | Capella Microsystems, Inc. | Photodetector and device employing the photodetector for converting an optical signal into an electrical signal |
| JP3715193B2 (ja) * | 2000-10-20 | 2005-11-09 | セイコーインスツル株式会社 | リニアイメージセンサｉｃ |
| JP2009194197A (ja) * | 2008-02-15 | 2009-08-27 | Panasonic Corp | 半導体装置及びその製造方法 |
| JP6406452B2 (ja) * | 2015-06-30 | 2018-10-17 | 富士電機株式会社 | 半導体装置及びその製造方法 |
| CN113668064B (zh) * | 2021-07-29 | 2022-12-23 | 山西烁科晶体有限公司 | 一种优化碳化硅晶片电阻率的辐照方法 |
-
1993
- 1993-06-25 KR KR1019930011754A patent/KR940006262A/ko not_active Application Discontinuation
-
1996
- 1996-01-18 US US08/588,395 patent/US5672906A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5672906A (en) | 1997-09-30 |
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| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |