JPS649742B2 - - Google Patents
Info
- Publication number
- JPS649742B2 JPS649742B2 JP5526681A JP5526681A JPS649742B2 JP S649742 B2 JPS649742 B2 JP S649742B2 JP 5526681 A JP5526681 A JP 5526681A JP 5526681 A JP5526681 A JP 5526681A JP S649742 B2 JPS649742 B2 JP S649742B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- type
- semiconductor substrate
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 6
- 230000015556 catabolic process Effects 0.000 description 25
- 238000005468 ion implantation Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5526681A JPS57169273A (en) | 1981-04-13 | 1981-04-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5526681A JPS57169273A (en) | 1981-04-13 | 1981-04-13 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57169273A JPS57169273A (en) | 1982-10-18 |
| JPS649742B2 true JPS649742B2 (ko) | 1989-02-20 |
Family
ID=12993796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5526681A Granted JPS57169273A (en) | 1981-04-13 | 1981-04-13 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57169273A (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6064481A (ja) * | 1983-09-19 | 1985-04-13 | Hitachi Ltd | 半導体装置 |
| JPS60158676A (ja) * | 1984-01-28 | 1985-08-20 | Rohm Co Ltd | 定電圧ダイオ−ド |
| JPS60233864A (ja) * | 1984-05-02 | 1985-11-20 | Nec Ic Microcomput Syst Ltd | 半導体装置の構造 |
| US5276350A (en) * | 1991-02-07 | 1994-01-04 | National Semiconductor Corporation | Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5636171A (en) * | 1979-08-31 | 1981-04-09 | Hitachi Ltd | Zener diode and manufacture thereof |
-
1981
- 1981-04-13 JP JP5526681A patent/JPS57169273A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57169273A (en) | 1982-10-18 |
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