KR930020586A - 반도체장치의 배선구조 및 옴전극 그리고 이들의 형성방법 - Google Patents

반도체장치의 배선구조 및 옴전극 그리고 이들의 형성방법 Download PDF

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Publication number
KR930020586A
KR930020586A KR1019930003079A KR930003079A KR930020586A KR 930020586 A KR930020586 A KR 930020586A KR 1019930003079 A KR1019930003079 A KR 1019930003079A KR 930003079 A KR930003079 A KR 930003079A KR 930020586 A KR930020586 A KR 930020586A
Authority
KR
South Korea
Prior art keywords
layer
tungsten
gold
auge
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019930003079A
Other languages
English (en)
Korean (ko)
Inventor
가꾸 이시이
Original Assignee
쿠라우찌 노리타카
스미도모덴기고오교오 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4575192A external-priority patent/JPH05167063A/ja
Application filed by 쿠라우찌 노리타카, 스미도모덴기고오교오 가부시기가이샤 filed Critical 쿠라우찌 노리타카
Publication of KR930020586A publication Critical patent/KR930020586A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019930003079A 1992-03-03 1993-03-03 반도체장치의 배선구조 및 옴전극 그리고 이들의 형성방법 Ceased KR930020586A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP92-45751 1992-03-03
JP4575192A JPH05167063A (ja) 1991-10-15 1992-03-03 オーミック電極とその形成方法及び半導体装置
JP5540892 1992-03-13
JP6229992 1992-03-18

Publications (1)

Publication Number Publication Date
KR930020586A true KR930020586A (ko) 1993-10-20

Family

ID=26396300

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930003079A Ceased KR930020586A (ko) 1992-03-03 1993-03-03 반도체장치의 배선구조 및 옴전극 그리고 이들의 형성방법

Country Status (3)

Country Link
JP (1) JPH05326518A (enrdf_load_stackoverflow)
KR (1) KR930020586A (enrdf_load_stackoverflow)
TW (1) TW225038B (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07183377A (ja) * 1993-12-24 1995-07-21 Nec Corp 半導体装置
JP5314963B2 (ja) 2008-08-12 2013-10-16 富士フイルム株式会社 積層体、圧電素子、および液体吐出装置
JP5371329B2 (ja) * 2008-08-29 2013-12-18 富士フイルム株式会社 圧電素子、および液体吐出装置

Also Published As

Publication number Publication date
JPH05326518A (ja) 1993-12-10
TW225038B (enrdf_load_stackoverflow) 1994-06-11

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