JPS6138850B2 - - Google Patents

Info

Publication number
JPS6138850B2
JPS6138850B2 JP6697679A JP6697679A JPS6138850B2 JP S6138850 B2 JPS6138850 B2 JP S6138850B2 JP 6697679 A JP6697679 A JP 6697679A JP 6697679 A JP6697679 A JP 6697679A JP S6138850 B2 JPS6138850 B2 JP S6138850B2
Authority
JP
Japan
Prior art keywords
electrode
layer
vapor deposition
deposition source
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6697679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55158631A (en
Inventor
Akihiro Shibatomi
Kenya Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6697679A priority Critical patent/JPS55158631A/ja
Publication of JPS55158631A publication Critical patent/JPS55158631A/ja
Publication of JPS6138850B2 publication Critical patent/JPS6138850B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP6697679A 1979-05-30 1979-05-30 Manufacture of semiconductor device Granted JPS55158631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6697679A JPS55158631A (en) 1979-05-30 1979-05-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6697679A JPS55158631A (en) 1979-05-30 1979-05-30 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55158631A JPS55158631A (en) 1980-12-10
JPS6138850B2 true JPS6138850B2 (enrdf_load_stackoverflow) 1986-09-01

Family

ID=13331554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6697679A Granted JPS55158631A (en) 1979-05-30 1979-05-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55158631A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130477A (en) * 1981-02-05 1982-08-12 Nec Corp Manufacture of field-effect transistor
JPS57166085A (en) * 1981-04-03 1982-10-13 Fujitsu Ltd Manufacture of semiconductor device
JPS6246320Y2 (enrdf_load_stackoverflow) * 1981-04-10 1987-12-12
JPS5821877A (ja) * 1981-07-31 1983-02-08 Fujitsu Ltd 半導体装置の製造方法
JPS58162069A (ja) * 1982-03-19 1983-09-26 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP3460976B2 (ja) * 2000-02-23 2003-10-27 関西日本電気株式会社 リフトオフ法による電極形成のための蒸着方法
JP4140440B2 (ja) * 2003-05-13 2008-08-27 住友電気工業株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS55158631A (en) 1980-12-10

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